In the present work, the effect of incorporation of graphene on the poly(3-hexylthiophene) (P3HT):CuInS 2 quantum dot (CIS QD)-based solar cell has been studied. For this purpose, the concentration of graphene is varied from 0 to 0.01% w/w in P3HT–CIS (1:0.5) film. It is found that graphene does not deteriorate the absorption of the composite film. It assists in dissociating the photogenerated excitons (both in P3HT and QDs) owing to its two-dimensional structure and high electron affinity as is evident by photoluminescence (PL) quenching. At 0.01% w/w concentration of graphene about ∼95% of PL is quenched. The electrical characteristics show that the incorporation of graphene enhances the efficiency of the device by establishing interconnected conducting pathways in the volume of polymer matrix. The maximum efficiency is observed to be 1.5% at 0.005% w/w content of graphene. However, at higher concentration, i.e., 0.01% w/w, the device starts deteriorating.
Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.
Quantum confined nanostructures are very important because of their application towards optoelectronic devices. Commercial colored glass filters, which have large semiconductor particles, are being used to manufacture nanocrystals by suitable heat treatments. The progress in this area has been hampered by high size dispersion of these dots in the glass matrix which leads to reduction in higher order susceptibility thereby reducing non-linearity. In the present paper attempt has been made to theoretically model the temperature profiles of a laser irradiated CdS doped Borosilicate sample. Laser being used has a beam diameter of 1.5 mm and energy for 10 nsec pulse is 10 mJ. Two different particle radii of 5 nm and 10 nm have been considered. It is found that larger particles reach higher temperatures for the same pulse characteristics. This is because smaller particles have larger surface to volume ratio and hence dissipates out heat faster to the surrounding. Hence bigger particles will reach dissolution temperature faster than smaller particle and particle beyond a certain size should dissolve in the glass matrix when a sample is heat treated by laser. This could lead to a reduction in size dispersion of the nanocrystals. Also photodarkening effect found in semiconductor doped glasses is a big handicap for practical application of these materials in fast optical switching and non-linear optical devices. Photodarkening effect has been established to be a photochemical effect and it is important to study the temperature profiles around a particle since it will effect the impurity migration.
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