Dr. Toshiro Itani Profile

Dr. Toshiro Itani

at National Institute of AIST

SPIE Involvement:

Conference Chair | Editor | Author

Publications (144)

Proceedings Article | 1 May 2023 Presentation + Paper

Single-component silicon-based patterning materials for EUV lithography

Julius Joseph Santillan, Akihiro Konda, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 12498, 1249814 (2023) https://doi.org/10.1117/12.2657889

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, FT-IR spectroscopy, Lithography, Silicon, Film thickness

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Proceedings Article | 16 March 2021 Presentation + Paper

Alternative developer solution/process for EUV lithography: ethyltrimethylammonium hydroxide (ETMAH)

Julius Joseph Santillan, Masahiko Harumoto, Tomohiro Motono, Andreia Figueiredo dos Santos, Chisayo Mori, Yuji Tanaka, Harold Stokes, Masaya Asai, Toshiro Itani

Proceedings Volume 11609, 116090W (2021) https://doi.org/10.1117/12.2583753

KEYWORDS: Extreme ultraviolet lithography, Scanning electron microscopy, Photoresist processing, Extreme ultraviolet, Optical lithography, Medium wave, Line width roughness, Line edge roughness, Semiconductors, Lithography

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Proceedings Article | 14 October 2020 Poster + Presentation + Paper

Alternative EUVL resist processes for stochastic defect reduction

Julius Joseph Santillan, Masahiko Harumoto, Harold Stokes, Chisayo Mori, Yuji Tanaka, Tomohiro Motono, Masaya Asai, Toshiro Itani

Proceedings Volume 11517, 1151718 (2020) https://doi.org/10.1117/12.2572771

KEYWORDS: Stochastic processes, Photoresist processing, Extreme ultraviolet lithography, Optical lithography, Standards development, Bridges, Line width roughness, Lithography

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Proceedings Article | 23 March 2020 Paper

KrF excimer laser-based patterning system for dual applications in both lithography and ablation

Julius Joseph Santillan, Nobutaka Uemori, Hiroshi Yamaoka, Toshiro Itani

Proceedings Volume 11327, 113271B (2020) https://doi.org/10.1117/12.2551894

KEYWORDS: Optical lithography, Excimer lasers, Laser applications, Laser systems engineering, Laser ablation, Semiconductors, Packaging

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Proceedings Article | 23 March 2020 Paper

Application of alternative developer solutions for EUV lithography

Julius Joseph Santillan, Masahiko Harumoto, Harold Stokes, Chisayo Mori, Yuji Tanaka, You Arisawa, Tomohiro Motono, Masaya Asai, Toshiro Itani

Proceedings Volume 11323, 113231W (2020) https://doi.org/10.1117/12.2551891

KEYWORDS: Extreme ultraviolet lithography, Photoresist processing, Optical lithography, Semiconductors, Lithography

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Proceedings Article | 28 June 2019 Paper

Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism

Takahiro Kozawa, Teppei Yamada, Ayako Nakajima, Yusa Muroya, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10957, 109570C (2019) https://doi.org/10.1117/12.2515133

KEYWORDS: Nanoparticles, Line width roughness, Metals, Oxides, X-rays, Reflectivity, Extreme ultraviolet, Zirconium dioxide, Extreme ultraviolet lithography

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Proceedings Article | 12 October 2018 Presentation

Pattern formation mechanism of zirconia nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Teppei Yamada, Satoshi Ishihara, Hiroki Yamamoto, Yusa Muroya, Julius J. Santillan, Toshiro Itani

Proceedings Volume 10809, 108090I (2018) https://doi.org/10.1117/12.2501647

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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The performance of chemically amplified resist is approaching its physical limit with the reduction of feature sizes due to the acid diffusion needed for the solubility change of resist polymer. The line edge roughness (LER) of chemically amplified resists rapidly increases in the sub-10-nm-half-pitch region when the half-pitch is decreased. Also, the stochastic defect (pinching and bridges) generation is a significant concern for the high resolution patterning with high throughput. To solve these problems, the increase of the density of resist films is an important strategy. Metal oxide nanoparticle resists have attracted much attention as the next generation resist used for the high-volume production of semiconductor devices because of their high density property. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In the previous study[1], the numbers of electron-hole pairs required for the solubility change of the resist films were estimated for a zirconia nanoparticle and a ligand shell, respectively. In this study, the pattern formation mechanism of zirconia nanoparticle resist was investigated. The elementary reactions possibly induced in the zirconia nanoparticle resist were investigated using a pulse radiolysis method. The pulse radiolysis is a powerful method to directly observe the kinetics of short-lived intermediates produced by an ionizing radiation. The pattern formation mechanism was assumed by integrating the elementary reactions. The resist patterns fabricated using an EUV exposure tool were analyzed on the basis of the assumed pattern formation mechanism. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in nanoparticles for the chemical change of ligand molecules. Acknowledgement This work was partially supported by Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO). Reference [1] T. Kozawa, J. J. Santillan, and T. Itani, “Electron–hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation”, Jpn. J. Appl. Phys. 57, 026501 (2018).

Proceedings Article | 19 March 2018 Presentation

Sensitization and reaction mechanisms of ZrO2 nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Satoshi Ishihara, Hiroki Yamamoto, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10583, 105831O (2018) https://doi.org/10.1117/12.2297654

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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Proceedings Article | 13 March 2018 Paper

Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10586, 105860F (2018) https://doi.org/10.1117/12.2294585

KEYWORDS: Metals, Extreme ultraviolet lithography, Atomic force microscopy, Photoresist processing, Analytical research, Extreme ultraviolet, Line width roughness

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Proceedings Article | 13 March 2018 Paper

Characterization of metal resist for EUV lithography using Infrared free electron laser

Minoru Toriumi, Takayasu Kawasaki, Takayuki Imai, Koichi Tsukiyama, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10586, 105860E (2018) https://doi.org/10.1117/12.2297156

KEYWORDS: Metals, Extreme ultraviolet lithography, Infrared radiation, Infrared lasers, Extreme ultraviolet, Photoresist developing, Lithography, Free electron lasers, Scientific research, Photoresist processing

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Proceedings Article | 5 April 2017 Presentation + Paper

An investigation on "nano-swelling" phenomenon during resist dissolution using in situ high-speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10146, 101460C (2017) https://doi.org/10.1117/12.2257835

KEYWORDS: Extreme ultraviolet, Photoresist processing, Chemical analysis, Atomic force microscopy, Polymers, Atomic force microscope, Chemically amplified resists, Extreme ultraviolet lithography, Optical lithography, Visualization

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Proceedings Article | 31 March 2016 Paper

Quantification of the resist dissolution process: an in situ analysis using high speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9779, 97790D (2016) https://doi.org/10.1117/12.2219078

KEYWORDS: Photoresist processing, Polymers, Particles, Optical lithography, Image processing, Atomic force microscopy, Extreme ultraviolet, Polymer thin films, Data conversion, Atomic force microscope

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Proceedings Article | 25 March 2016 Paper

Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography)

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 9779, 97790E (2016) https://doi.org/10.1117/12.2218839

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Chemically amplified resists, Lithography, Semiconductors, Photoresist processing, Bridges, Optical lithography, Molecules, Polymers, Scanning electron microscopy, Chemical analysis, Monte Carlo methods

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Proceedings Article | 25 March 2016 Paper

Characterization of 'metal resist' for EUV lithography

Minoru Toriumi, Yuta Sato, Reiji Kumai, Yoshiyuki Yamashita, Koichi Tsukiyama, Toshiro Itani

Proceedings Volume 9779, 97790G (2016) https://doi.org/10.1117/12.2219030

KEYWORDS: Metals, Extreme ultraviolet lithography, Extreme ultraviolet, FT-IR spectroscopy, Light sources, X-ray diffraction, Photoemission spectroscopy, Scanning transmission electron microscopy, Free electron lasers, Lithography, Molecules, Zirconium, Oxides, X-rays, Chemical species

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Proceedings Article | 18 March 2016 Paper

Novel ultra-high sensitive 'metal resist' for EUV lithography

Toru Fujimori, Toru Tsuchihashi, Shinya Minegishi, Takashi Kamizono, Toshiro Itani

Proceedings Volume 9776, 977605 (2016) https://doi.org/10.1117/12.2219056

KEYWORDS: Extreme ultraviolet lithography, Metals, Extreme ultraviolet, Lithography, Manufacturing, Chemically amplified resists, Chemistry, Line width roughness, System on a chip, Standards development, Silicon, Semiconducting wafers

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Proceedings Article | 6 April 2015 Paper

Evaluation of rinse material and process for EUV lithography

Kazuma Yamamoto, Toshiro Itani

Proceedings Volume 9422, 94221Y (2015) https://doi.org/10.1117/12.2085282

KEYWORDS: Digital signal processing, Surface plasmons, Extreme ultraviolet lithography, Lithography, Materials processing, Critical dimension metrology, Data modeling, Manufacturing, High volume manufacturing, Extreme ultraviolet

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Proceedings Article | 20 March 2015 Paper

The effect of resist material composition on development behavior

Shinya Minegishi, Toshiro Itani

Proceedings Volume 9425, 94251I (2015) https://doi.org/10.1117/12.2085820

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Photoresist processing, Extreme ultraviolet, Electron beam lithography, Line width roughness, Atomic force microscopy, Lithography, Electron beams, Stochastic processes

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Proceedings Article | 20 March 2015 Paper

The effect of resist dissolution process on pattern formation variability: an in situ analysis using high-speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9425, 942506 (2015) https://doi.org/10.1117/12.2085746

KEYWORDS: Line edge roughness, Photoresist processing, Extreme ultraviolet lithography, Lithography, Bridges, Atomic force microscopy, Visualization, Biological research, Polymers, 3D image processing

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Proceedings Article | 20 March 2015 Paper

Inhomogeneity of PAGs in a hybrid-type EUV resist system studied by molecular-dynamics simulations for EUV lithography

Minoru Toriumi, Toshiro Itani

Proceedings Volume 9425, 942508 (2015) https://doi.org/10.1117/12.2085691

KEYWORDS: Extreme ultraviolet, Diffusion, Polymers, Extreme ultraviolet lithography, Line edge roughness, Photoresist processing, Computer simulations, Solids, Ions, 3D modeling

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Proceedings Article | 20 March 2015 Paper

Recent progress of negative-tone imaging with EUV exposure

Toru Fujimori, Toru Tsuchihashi, Toshiro Itani

Proceedings Volume 9425, 942505 (2015) https://doi.org/10.1117/12.2085706

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Lithography, Scanners, Silicon, Semiconducting wafers, Extreme ultraviolet, Manufacturing, Standards development, Imaging systems

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Proceedings Article | 13 March 2015 Paper

Relationship between information and energy carried by extreme-ultraviolet photons: consideration from the viewpoint of sensitivity enhancement

Takahiro Kozawa, Shinya Fujii, Julius Santillan, Toshiro Itani

Proceedings Volume 9422, 942206 (2015) https://doi.org/10.1117/12.2085619

KEYWORDS: Photons, Line edge roughness, Quantum efficiency, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Monte Carlo methods, Stochastic processes, Chemically amplified resists

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Proceedings Article | 17 April 2014 Paper

EUV resist simulation based on process parameters of pattern formation reaction

Norihiko Sugie, Toshiro Itani, Takahiro Kozawa

Proceedings Volume 9048, 90482G (2014) https://doi.org/10.1117/12.2046229

KEYWORDS: Extreme ultraviolet, Photoresist processing, Monte Carlo methods, Lithography, Line edge roughness, Line width roughness, Extreme ultraviolet lithography, Scanning electron microscopy, Stochastic processes, Image processing

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Proceedings Article | 17 April 2014 Paper

Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 9048, 904806 (2014) https://doi.org/10.1117/12.2046225

KEYWORDS: Stochastic processes, Line edge roughness, Polymers, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Quantum efficiency, Bridges, Photons, Lithography

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Proceedings Article | 17 April 2014 Paper

Evaluations of negative tone development resist and process for EUV lithography

Toshiya Takahashi, Noriaki Fujitani, Toshiro Itani

Proceedings Volume 9048, 90482C (2014) https://doi.org/10.1117/12.2046175

KEYWORDS: Line width roughness, Lithography, Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist processing, Liquids, Lithographic illumination, Capillaries, Etching

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Proceedings Article | 27 March 2014 Paper

An in situ analysis of resist dissolution in alkali-based and organic solvent-based developers using high speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9051, 90510O (2014) https://doi.org/10.1117/12.2045886

KEYWORDS: Medium wave, Image analysis, Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet lithography, Analytical research, Atomic force microscopy, Polymers, Optical lithography

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Proceedings Article | 27 March 2014 Paper

Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography

Minoru Toriumi, Toshiro Itani

Proceedings Volume 9051, 90511C (2014) https://doi.org/10.1117/12.2045872

KEYWORDS: Chemical species, Polymers, Line edge roughness, Extreme ultraviolet lithography, Sulfur, Molecular interactions, Extreme ultraviolet, Fluorine, Molecules, Oxygen

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Proceedings Article | 1 April 2013 Paper

Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists

Eishi Shiobara, Yukiko Kikuchi, Toshiro Itani

Proceedings Volume 8679, 86792B (2013) https://doi.org/10.1117/12.2011482

KEYWORDS: Line width roughness, Extreme ultraviolet, Photoresist processing, Critical dimension metrology, Extreme ultraviolet lithography, Image processing, Manufacturing, Scanning electron microscopy, Lithography, Bridges

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Proceedings Article | 1 April 2013 Paper

Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 8679, 867913 (2013) https://doi.org/10.1117/12.2011240

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Bridges, Molecules, Scanning electron microscopy, Line edge roughness, Monte Carlo methods, Diffusion

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Proceedings Article | 29 March 2013 Paper

Process development of the EUVL negative-tone imaging at EIDEC

Toshiya Takahashi, Ryuji Onishi, Toshiro Itani

Proceedings Volume 8682, 86820M (2013) https://doi.org/10.1117/12.2011356

KEYWORDS: Line width roughness, Lithography, Extreme ultraviolet lithography, Photoresist processing, Extreme ultraviolet, Polymers, Image processing, Scanning electron microscopy, Optical lithography, Head-mounted displays

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Proceedings Article | 29 March 2013 Paper

In situ dissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8682, 86820I (2013) https://doi.org/10.1117/12.2011373

KEYWORDS: 3D modeling, Image analysis, Standards development, 3D image processing, Atomic force microscopy, Photoresist processing, Polymers, Chemical analysis, Analytical research, Semiconducting wafers

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Proceedings Article | 21 March 2012 Paper

Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8322, 832206 (2012) https://doi.org/10.1117/12.916293

KEYWORDS: Diffusion, Chemically amplified resists, Polymers, Line edge roughness, Extreme ultraviolet, Chemical analysis, Monte Carlo methods, Extreme ultraviolet lithography, Line width roughness, Photons

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Proceedings Article | 20 March 2012 Paper

EUV resist processing with flash-lamp

Julius Joseph Santillan, Koji Kaneyama, Akihiko Morita, Kazuhiko Fuse, Hiroki Kiyama, Masaya Asai, Toshiro Itani

Proceedings Volume 8325, 832513 (2012) https://doi.org/10.1117/12.916342

KEYWORDS: Line width roughness, Photoresist processing, Extreme ultraviolet, Lithography, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Lamps, Xenon, Scanning electron microscopy

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Proceedings Article | 19 March 2012 Paper

An in situ analysis of the resist pattern formation process

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8325, 83250P (2012) https://doi.org/10.1117/12.916343

KEYWORDS: Photoresist processing, Critical dimension metrology, Extreme ultraviolet, Statistical analysis, Analytical research, 3D image processing, Extreme ultraviolet lithography, Image processing, Lithography, Semiconducting wafers

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Proceedings Article | 16 April 2011 Paper

High-sensitivity EUV resists based on fluorinated polymers

Tsuneo Yamashita, Masamichi Morita, Yoshito Tanaka, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7972, 79721G (2011) https://doi.org/10.1117/12.879568

KEYWORDS: Extreme ultraviolet, Polymers, Line width roughness, Lithography, Extreme ultraviolet lithography, Absorption, Fluorine, Materials processing, Chemical species, Deep ultraviolet

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Proceedings Article | 16 April 2011 Paper

Performance of EUV molecular resists based on fullerene derivatives

Hiroaki Oizumi, Kentaro Matsunaga, Koji Kaneyama, Julius Joseph Santillan, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7972, 797209 (2011) https://doi.org/10.1117/12.879302

KEYWORDS: Fullerenes, Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photoresist processing, Semiconducting wafers, Semiconductors, Etching, Scanning electron microscopy

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Proceedings Article | 16 April 2011 Paper

EUV negative-resist based on thiol-yne system

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kaneyama, Toshiro Itani

Proceedings Volume 7972, 79721E (2011) https://doi.org/10.1117/12.879037

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Manganese, Line width roughness, Thin film coatings, Diffusion, Line edge roughness, Standards development, Silicon

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Proceedings Article | 16 April 2011 Paper

Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7972, 79720U (2011) https://doi.org/10.1117/12.879331

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Matrices, Chemical analysis, Image processing, Chemically amplified resists, Extreme ultraviolet, Quantum efficiency, Materials processing, Glasses

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Proceedings Article | 16 April 2011 Paper

In situ dissolution analysis of EUV resists

Toshiro Itani, Julius Joseph Santillan

Proceedings Volume 7972, 79720H (2011) https://doi.org/10.1117/12.878670

KEYWORDS: Photoresist processing, Extreme ultraviolet, Polymers, Atomic force microscopy, Semiconducting wafers, Polymer thin films, Lithography, Analytical research, Visualization, Liquids

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Proceedings Article | 8 April 2011 Paper

Relationships between EUV resist outgassing and contamination deposition at Selete

Hiroaki Oizumi, Kazuyuki Matsumaro, Satoshi Nomura, Julius Joseph Santillan, Toshiro Itani, Takeo Watanabe, Naohiro Matsuda, Tetsuo Harada, Hiroo Kinoshita

Proceedings Volume 7969, 796921 (2011) https://doi.org/10.1117/12.878571

KEYWORDS: Contamination, Extreme ultraviolet, Extreme ultraviolet lithography, Mirrors, Spectroscopy, Photography, Statistical analysis, Protactinium, Optical components, Line width roughness

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Proceedings Article | 8 April 2011 Paper

Application of flash-lamp post-exposure baking for EUV resist processing

Koji Kaneyama, Toshiro Itani

Proceedings Volume 7969, 79692D (2011) https://doi.org/10.1117/12.878429

KEYWORDS: Lithography, Line width roughness, Extreme ultraviolet lithography, Photoresist processing, Extreme ultraviolet, Optical lithography, Diffusion, Scanning electron microscopy, Semiconducting wafers, Image processing

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Proceedings Article | 8 April 2011 Paper

Study of post-develop defect on typical EUV resist

Masahiko Harumoto, Sadayasu Suyama, Tadashi Miyagi, Akihiko Morita, Masaya Asai, Koji Kaneyama, Toshiro Itani

Proceedings Volume 7969, 79692G (2011) https://doi.org/10.1117/12.878859

KEYWORDS: Extreme ultraviolet, Scanning electron microscopy, Photoresist processing, Extreme ultraviolet lithography, Standards development, Inspection, Process control, Image processing, Bridges, Raman spectroscopy

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Proceedings Article | 25 March 2011 Paper

Development status of EUV resist materials and processing at Selete

Kentaro Matsunaga, Gousuke Shiraishi, Julius Joseph Santillian, Koji Kaneyama, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7969, 796905 (2011) https://doi.org/10.1117/12.878432

KEYWORDS: Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet, Extreme ultraviolet lithography, Polymers, Etching, Semiconductors, Manufacturing, Scanning electron microscopy

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Proceedings Article | 31 March 2010 Paper

Development of molecular resists based on Phenyl[4]calixarene derivatives.

Masatoshi Echigo, Hiromi Hayashi, Hiroaki Oizumi, Kazuyuki Matsumaro, Toshiro Itani

Proceedings Volume 7639, 76392B (2010) https://doi.org/10.1117/12.846475

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Cadmium sulfide, Line edge roughness, Industrial chemicals, Standards development, Lithography, Polymers, Electron beam lithography, Extreme ultraviolet

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Proceedings Article | 31 March 2010 Paper

Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system

Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou, Kentaro Matsunaga, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7639, 76391O (2010) https://doi.org/10.1117/12.846033

KEYWORDS: Polymers, Diffusion, Lithography, Line width roughness, Semiconducting wafers, Polymer thin films, Extreme ultraviolet lithography, Research management, Optical lithography, Photoresist processing

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Proceedings Article | 30 March 2010 Paper

Highly sensitive EUV-resist based on thiol-ene radical reaction

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kaneyama, Toshiro Itani

Proceedings Volume 7639, 76391J (2010) https://doi.org/10.1117/12.846339

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Polymers, Line edge roughness, Silicon, Scanning electron microscopy, Photography, Diffusion, Carbon monoxide

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Proceedings Article | 26 March 2010 Paper

Development of EUV resists based on various new materials

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Gousuke Shiraishi, Koji Kaneyama, Kentaro Matsunaga, Toshiro Itani

Proceedings Volume 7639, 76390R (2010) https://doi.org/10.1117/12.846429

KEYWORDS: Fullerenes, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Lithography, Semiconductors, Manufacturing, Photoresist processing, Scanning electron microscopy, Etching

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Proceedings Article | 26 March 2010 Paper

Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7639, 76390B (2010) https://doi.org/10.1117/12.846500

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Chemical analysis, Extreme ultraviolet, Chemically amplified resists, Line width roughness, Matrices, Image processing, Scanning electron microscopy, Lithography

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Proceedings Article | 23 March 2010 Paper

Development of novel positive-tone resists for EUVL

Takanori Owada, Hideaki Shiotani, Kayoko Aoyama, Takashi Kashiwamura, Mitsuru Shibata, Testuro Takeya, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7636, 763632 (2010) https://doi.org/10.1117/12.846069

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Line edge roughness, Line width roughness, Scanning electron microscopy, Electron beam lithography, Photoresist processing, Semiconductors, Electron beams

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Proceedings Article | 23 March 2010 Paper

Alternative resist processes for LWR reduction in EUVL

Koji Kaneyama, Kentaro Matsunaga, Gousuke Shiraishi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7636, 763633 (2010) https://doi.org/10.1117/12.846073

KEYWORDS: Line width roughness, Photoresist processing, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Protactinium, Semiconducting wafers, Lithography, Standards development, Cooling systems

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Proceedings Article | 23 March 2010 Paper

Evaluations of EUV resist outgassing by gas chromatography mass spectrometry (GC-MS)

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Toshiro Itani

Proceedings Volume 7636, 76362W (2010) https://doi.org/10.1117/12.846269

KEYWORDS: Extreme ultraviolet, Mass spectrometry, Calibration, Chromatography, Extreme ultraviolet lithography, Ions, Ionization, Chemical analysis, Semiconducting wafers, Molecules

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Proceedings Article | 20 March 2010 Paper

Development of resist material and process for hp-2x-nm devices using EUV lithography

Kentaro Matsunaga, Hiroaki Oizumi, Koji Kaneyama, Gousuke Shiraishi, Kazuyuki Matsumaro, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7636, 76360S (2010) https://doi.org/10.1117/12.846088

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photoresist processing, Line width roughness, Extreme ultraviolet, Manufacturing, Materials processing, Semiconductors, Analytical research, Semiconducting wafers

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 1 April 2009 Paper

Development of EUV resists at Selete

Hiroaki Oizumi, Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 72731M (2009) https://doi.org/10.1117/12.812937

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Optical lithography, Manufacturing, Standards development, Semiconductors, Photoresist processing, Chemically amplified resists, Diffusion

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Proceedings Article | 1 April 2009 Paper

EUV resist outgassing quantification and application

Shinji Kobayashi, Julius Joseph Santillan, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7273, 72731P (2009) https://doi.org/10.1117/12.813362

KEYWORDS: Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Ions, Protactinium, Contamination, Semiconducting wafers, Mirrors, Quality measurement, Chemical analysis

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Proceedings Article | 1 April 2009 Paper

EUV resist processing in vacuum

Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 72731Q (2009) https://doi.org/10.1117/12.813365

KEYWORDS: Photoresist processing, Lithography, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Protactinium, Cooling systems, Image resolution

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Proceedings Article | 1 April 2009 Paper

Effect of resist polymer molecular weight on EUV lithography

Hideaki Tsubaki, Katsuhiro Yamashita, Hidenori Takahashi, Daisuke Kawamura, Toshiro Itani

Proceedings Volume 7273, 72733S (2009) https://doi.org/10.1117/12.812204

KEYWORDS: Polymers, Line width roughness, Diffusion, Extreme ultraviolet lithography, Photomasks, Electroluminescence, Semiconducting wafers, Glasses, Extreme ultraviolet, Image resolution

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Proceedings Article | 1 April 2009 Paper

Pattern transfer process development for EUVL

Daisuke Kawamura, Yuusuke Tanaka, Toshiro Itani, Eiichi Soda, Noriaki Oda

Proceedings Volume 7273, 72731O (2009) https://doi.org/10.1117/12.812928

KEYWORDS: Etching, Reactive ion etching, Extreme ultraviolet lithography, Silicon, Manufacturing, System on a chip, Photoresist processing, Scanning electron microscopy, Photomasks, Overlay metrology

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Proceedings Article | 1 April 2009 Paper

Non-chemically amplified negative resist for EUV lithography

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kanayama, Toshiro Itani

Proceedings Volume 7273, 72731N (2009) https://doi.org/10.1117/12.813377

KEYWORDS: Extreme ultraviolet lithography, Polymers, Line width roughness, Extreme ultraviolet, Line edge roughness, Carbon monoxide, Silicon, Scanning electron microscopy, Photography, Diffusion

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Proceedings Article | 1 April 2009 Paper

Evaluation of track performance for EUV lithography

Keiichi Tanaka, Junji Nakamura, Yoshiaki Yamada, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 727320 (2009) https://doi.org/10.1117/12.813989

KEYWORDS: Polymers, Semiconducting wafers, Coating, Silicon, Extreme ultraviolet, Extreme ultraviolet lithography, Liquids, Photoresist processing, Time metrology, Solids

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Proceedings Article | 18 March 2009 Paper

Process liability evaluation for EUVL

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 4 December 2008 Paper

Current benchmarking results of EUV resist at Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7140, 714008 (2008) https://doi.org/10.1117/12.804665

KEYWORDS: Line width roughness, Extreme ultraviolet, Convolution, Lithographic illumination, Extreme ultraviolet lithography, Scanning electron microscopy, Polymers, Manufacturing, Electroluminescence, Point spread functions

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Proceedings Article | 15 April 2008 Paper

Quantitative analysis of EUV resist outgassing

Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 6923, 692345 (2008) https://doi.org/10.1117/12.771828

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Molecules, Semiconducting wafers, Xenon, Analytical research, Protactinium, Mirrors, EUV optics, Wafer-level optics

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Proceedings Article | 4 April 2008 Paper

EUV resist outgassing analysis in Selete

Julius Joseph Santillan, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 6923, 692342 (2008) https://doi.org/10.1117/12.771779

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Carbon dioxide, Ions, Molecules, Protactinium, Analytical research, Statistical analysis, Mass spectrometry, Line width roughness

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Proceedings Article | 4 April 2008 Paper

EUV resist development in Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 6923, 692313 (2008) https://doi.org/10.1117/12.771858

KEYWORDS: Line width roughness, Extreme ultraviolet, Electroluminescence, Scanning electron microscopy, Extreme ultraviolet lithography, Solids, 3D modeling, Diffusion, Photomasks, Lithographic illumination

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Proceedings Article | 4 April 2008 Paper

EUV resist based on low molecular weight PHS

Masamitsu Shirai, Akitaka Kurosima, Haruyuki Okamura, Koji Kaneyama, Toshiro Itani

Proceedings Volume 6923, 692344 (2008) https://doi.org/10.1117/12.771774

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Polymers, Polymerization, Line width roughness, Line edge roughness, Semiconductors, Diffusion, Bioalcohols, Ultraviolet radiation

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Proceedings Article | 26 March 2008 Paper

Surface roughness of molecular resist for EUV lithography

Minoru Toriumi, Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 6923, 69230L (2008) https://doi.org/10.1117/12.772349

KEYWORDS: Polymers, Surface roughness, Line edge roughness, Spatial frequencies, Extreme ultraviolet lithography, Atomic force microscopy, Polymer thin films, Extreme ultraviolet, Photoresist processing, Image processing

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Proceedings Article | 26 March 2008 Paper

Base quencher effects in chemically amplified resist at sub-30-nm fabrication

Takahiro Kozawa, Seiichi Tagawa, Julius Joseph Santillan, Minoru Toriumi, Toshiro Itani

Proceedings Volume 6923, 69230P (2008) https://doi.org/10.1117/12.772154

KEYWORDS: Diffusion, Line edge roughness, Image quality, Extreme ultraviolet, Molecules, Chemically amplified resists, Extreme ultraviolet lithography, Photoresist processing, Lithography, Quenching (fluorescence)

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Proceedings Article | 20 March 2008 Paper

Selete's EUV program: progress and challenges

Ichiro Mori, Osamu Suga, Hiroyuki Tanaka, Iwao Nishiyama, Tsuneo Terasawa, Hiroyuki Shigemura, Takao Taguchi, Toshihiko Tanaka, Toshiro Itani

Proceedings Volume 6921, 692102 (2008) https://doi.org/10.1117/12.772625

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Inspection, Particles, Defect inspection, Line width roughness, Contamination control, Reliability

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Selete launched a development program on EUV lithography and related mask technology in April 2006. The program is based on the concept of "lithography design and integration." It covers a wide range of areas that require further effort to get EUVL ready for volume production and was formulated on the basis that the issues should be considered from a variety of standpoints, such as acceleration of the development of key lithographic components, verification that EUVL is actually suitable for mass production, the construction of mask infrastructure, and the improvement of EUV-specific reliability and productivity. Two exposure tools have been installed as basic infrastructure: the small-field exposure tool (SFET) and the full-field exposure tool (EUV1). The objectives of the SFET installation are acceleration of the development of resist materials and processes, optimization of the mask structure and materials, and the evaluation of the exposure tool technology with regard to such things as imaging performance, stability, and the lifetimes of the optics and source components. The objective of the EUV1 installation is to demonstrate that lithography integration is a viable path to making EUV lithography a practical production technology. We found that the SFET provides both excellent resolution and high tool activity. This high performance helps us to obtain a clear understanding of the current level of EUVL performance and enables us to learn many things that can be fed back into the development program in the beta stage. A 1st static exposure with the EUV1 resolved 30-nm dense and isolated lines and 30-nm holes. The potential resolution was found to be as good as 28 nm. Although progress was made regarding EUV resist sensitivity and LWR, further progress is needed. A tool for analyzing out-gassing in EUV resists was found to facilitate the development of both resist materials and contamination control measures for exposure tools. A prototype full-field actinic inspection system for mask blanks is now under development and should become operational in the 2Q of 2008. A mask protection engineering (MPE) tool was used to show that a dual-pod carrier is very effective in protecting a mask from particles. Mask pattern defect inspection technology using a DUV wavelength of 199 nm and defect repair technology based on an FIB for EUV mask fabrication are also being developed. This work was supported in part by NEDO.

Proceedings Article | 22 March 2007 Paper

A study of EUV resist outgassing characteristics using a novel outgas analysis system

Julius Joseph Santillan, Minoru Toriumi, Toshiro Itani

Proceedings Volume 6519, 651944 (2007) https://doi.org/10.1117/12.711264

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Semiconducting wafers, Ions, Mass spectrometry, Mirrors, Protactinium, Plasma, Temperature metrology

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Proceedings Article | 11 April 2006 Paper

Analysis of 193nm immersion specific defects

Akihiko Otoguro, Jeung-Woo Lee, Toshiro Itani, Kiyoshi Fujii, Tomohiro Funakoshi, Tsunehiro Sakai, Kenji Watanabe, Mikio Arakawa, Hitoshi Nakano, Masamichi Kobayashi

Proceedings Volume 6153, 61531P (2006) https://doi.org/10.1117/12.656086

KEYWORDS: Photoresist processing, Bridges, Semiconducting wafers, Scanning electron microscopy, Photography, Immersion lithography, Thin film coatings, Lithography, Crystals, Quartz

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Proceedings Article | 11 April 2006 Paper

Reactivity of model compounds of ArF immersion, ArF, and KrF resists with diphenylsulfinyl radical cation, a cage-escape product of photochemistry of triphenylsulfonium salts

Yoshinori Matsui, Hidekazu Sugawara, Shou Tsuji, Toshiro Itani, Shu Seki, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6153, 61530I (2006) https://doi.org/10.1117/12.655087

KEYWORDS: Polymers, Chlorine, Absorption, Line edge roughness, Lithography, Electron beams, Photochemistry, Photolysis, Ions, Scientific research

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Reactivity of diphenylsulfinyl radical cation (Ph₂S^.⁺) with model compounds of "dry/wet" ArF resists and KrF resists was investigated by pulse radiolysis technique, in order to reveal the reaction between Ph₂S^.⁺ and a polymer. Ph₂S^.⁺ is an intermediate of photolysis of triphenylsulfonium salts. Some Ph₂S^.⁺ react with other intermediate of phenyl radical, leading to the formation of (phenylthio)biphenyl products and proton (H⁺). The reaction, referred to as rearrangement reaction, is mainly responsible for acid generation. However, some Ph₂S^.⁺ react with a polymer. Acid-generation efficiency might be enhanced if H+ is also formed by this reaction. Among 25 model compounds employed, Ph₂S^.⁺ was scavenged by phenolic compounds which have lower electrochemical half wave reduction potential (E_1/2) than that of Ph₂S. However, resulting radical cations of the phenolic compounds were not observed. Ph₂S^.⁺ was not scavenged by the other compounds with higher E_1/2. Decay rate constant of Ph₂S^.⁺ scavenged by additives clearly depends on the change of E_1/2 between Ph₂S and the additives including pyrene from which charge transfer was observed to Ph₂S^.⁺. The reaction is therefore charge transfer between the model compounds and Ph₂S^.⁺. The resulting radical cations of phenolic compounds are known to decompose to phenoxy radical and proton (H⁺), suggesting that the compounds contribute to the enhancement of acid-generation efficiency in a chemically amplified resist. From the viewpoint of reaction of Ph₂S^. + with resists, conventional polymer of KrF resist is therefore appropriate for H+ source. Phenolic compounds are generally not appropriate for the component of "dry/wet" ArF resists because of their strong absorption at 193 nm. However, the electron proved to be transferred from fluorinated methylphenols to Ph₂S^.⁺. Fluorinated methylphenols may have a potential for candidate of resist components improving acid generation in "dry/wet" ArF lithography.

Proceedings Article | 29 March 2006 Paper

Diffusion mechanism of water for immersion lithography

Minoru Toriumi, Chie Matsubara, Akihiko Otoguro, Toshiro Itani

Proceedings Volume 6153, 615311 (2006) https://doi.org/10.1117/12.656208

KEYWORDS: Diffusion, Polymers, Immersion lithography, Polymer thin films, Water, Solids, Liquids, Molecules, Lithography, Crystals

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Proceedings Article | 21 March 2006 Paper

Full-field exposure tools for ArF immersion lithography

Jeung-woo Lee, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Ken-ichi Shiraishi, Tomoharu Fujiwara, Yuki Ishii

Proceedings Volume 6154, 61544I (2006) https://doi.org/10.1117/12.656130

KEYWORDS: Semiconducting wafers, Resonance energy transfer, Standards development, Immersion lithography, Water, Lithography, Optical lithography, Photoresist processing, Photomasks, Microfluidics

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Proceedings Article | 21 March 2006 Paper

Novel high refractive index fluids for 193nm immersion lithography

Julius Santillan, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Akifumi Kagayama, Takashi Nakano, Norio Nakayama, Hiroaki Tamatani, Shin Fukuda

Proceedings Volume 6154, 61544Q (2006) https://doi.org/10.1117/12.656089

KEYWORDS: Photoresist materials, Refractive index, Immersion lithography, Absorption, Neodymium, Microfluidics, Fluid dynamics, Interferometry, Lithography, Water

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Proceedings Article | 4 May 2005 Paper

Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

T. Yamashita, T. Ishikawa, T. Yoshida, T. Hayamai, Takayuki Araki, H. Aoyama, T. Hagiwara, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599523

KEYWORDS: Polymers, Fluorine, Lithography, Immersion lithography, Transparency, Standards development, Quartz, Crystals, Photomasks, Polymerization

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Proceedings Article | 4 May 2005 Paper

Study of barrier coats for protection against airborne contamination in 157-nm lithography

Francis Houlihan, Raj Sakamuri, Keino Hamilton, Alla Dimerli, David Rentkiewicz, Andrew Romano, Ralph Dammel, Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Will Conley, Daniel Miller, Toshiro Itani, Masato Shigematsu, Etsuro Kawaguchi

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601810

KEYWORDS: Thin film coatings, Coating, Contamination, Scanning electron microscopy, Semiconducting wafers, Binary data, Photomasks, Lithography, Deep ultraviolet, Phase shifts

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Proceedings Article | 20 August 2004 Paper

Optimization of the chromium-shielding attenuated phase shift mask for 157-nm lithography

Eiji Kurose, Kunio Watanabe, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557753

KEYWORDS: Photomasks, Binary data, Phase shifts, Lithography, Nanoimprint lithography, Transmittance, Optical lithography, Chromium, Scanning electron microscopy, Resolution enhancement technologies

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Proceedings Article | 28 May 2004 Paper

Evaluation systems of F2 laser lithography materials

Yasuo Itakura, Youichi Kawasa, Keiji Egawa, Akira Sumitani, Hironao Sasaki, Iwao Higasikawa, Shigeo Irie, Kiyoshi Fujii, Toshiro Itani, Hitoshi Nakano, Hideo Hata

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534839

KEYWORDS: Transmittance, Pellicles, Photomasks, Fluorine, Lithography, Laser irradiation, Semiconducting wafers, Vacuum ultraviolet, Contamination, Laser development

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Proceedings Article | 28 May 2004 Paper

157-nm lithography with extremely high numerical aperture lens for 45-nm technology node

Toshifumi Suganaga, Jeung-Woo Lee, Eiji Kurose, Toshiyuki Ishimaru, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Julian Cashmore, Malcolm Gower

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535119

KEYWORDS: Nanoimprint lithography, Line edge roughness, Lithography, Photomasks, Tolerancing, Phase shifting, Binary data, Objectives, Resolution enhancement technologies, Lithographic illumination

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Proceedings Article | 28 May 2004 Paper

In-situ aberration monitoring using phase wheel targets

Lena Zavyalova, Bruce Smith, Toshifumi Suganaga, Seiji Matsuura, Toshiro Itani, Julian Cashmore

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537379

KEYWORDS: Monochromatic aberrations, Wavefronts, Lithography, Imaging systems, Point spread functions, Spherical lenses, Optical transfer functions, Zernike polynomials, Fourier transforms, Target detection

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Proceedings Article | 28 May 2004 Paper

157-nm chromeless phase lithography with extremely high numerical aperture

Kunio Watanabe, Takuya Hagiwara, Seiji Matsuura, Toshifumi Suganaga , Toshiro Itani , Kiyoshi Fujii

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535150

KEYWORDS: Lithography, Photomasks, Nanoimprint lithography, Lithographic illumination, Chromium, Quartz, Semiconducting wafers, Resolution enhancement technologies, Image resolution, Optical lithography

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Proceedings Article | 28 May 2004 Paper

157-nm chromeless phase lithography for 45-nm SRAM gate

Toshifumi Suganaga, Kunio Watanabe, Seiji Matsuura, Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534897

KEYWORDS: Nanoimprint lithography, Lithography, Photomasks, Line edge roughness, Lithographic illumination, Resolution enhancement technologies, Photoresist processing, Transmittance, Semiconductors, Fabrication

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Proceedings Article | 14 May 2004 Paper

A new monocyclic fluropolymer structure for 157-nm photoresists

Yoko Takebe, Masataka Eda, Shinji Okada, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Kiyoshi Fujii, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533932

KEYWORDS: Polymers, Transparency, Etching, Resistance, Polymerization, Fluorine, Photoresist materials, Lithography, Chemical species, Microelectromechanical systems

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Proceedings Article | 14 May 2004 Paper

Evaluation of outgassing from a fluorinated resist for 157-nm lithography

Shigeo Irie, Kiyoshi Fujii, Yasuo Itakura, Youichi Kawasa , Keiji Egawa, Ikuo Uchino, Akira Sumitani, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535110

KEYWORDS: Absorption, Transmittance, Ions, Polymers, Transmission electron microscopy, Lithography, Natural surfaces, Optical components, Contamination, Chemical analysis

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We have evaluated the outgassing products and the in-situ transmittance of a contaminated CaF₂ substrate for monocyclic fluoropolymers with four protecting groups: methoxymethyl (MOM), tert-butoxycarbonyl (t-BOC), menthoxymethyl (MM), and 2-cyclohexylcyclohexyloxymethyl (CCOM). We have also evaluated the same type of fluoropolymer with seven kinds of photo-acid generators (PAGs) added to a base fluoropolymer solution. We found little correlation between the total amount of outgassing from the polymer and the decreasing rate of the CaF₂ substrate transmittance caused by outgassing adhesion. Although the MOM protecting group generated the largest amount of outgassing products, the most substantial decrease in the transmittance was observed for the t-BOC protecting group. Also, the outgassing products due to use of a PAG did not greatly reduce the absorption coefficient of a CaF₂ substrate regardless of the kind of PAG. Therefore, the absorption coefficient of the outgassing-contaminated CaF₂ substrate appears to be more sensitive to the type of protecting group, especially the t-BOC protecting group including a t-butyl unit, rather than the type of fluoropolymer or PAG. We analyzed the substrate surface contaminant due to the t-butyl unit by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and time-of-flight secondary ion mass spectrometry (TOF-SIMS), and found that increasing amounts of organic compounds, containing mainly C- and H-atoms, were adhered to and deposited on the substrate surface with an increasing irradiation dose. We speculate that the contaminants on a CaF₂ surface with or without an anti-reflective coating were formed not only through mere physical adsorption, but also through certain chemical combinations. We conclude that in terms of material design of the fluoropolymer resist for 157-nm lithography, we need to pay attention to the protecting group of polymers, especially the t-BOC or t-butyl protecting group, which generates isobutene product during 157-nm irradiation.

Proceedings Article | 14 May 2004 Paper

Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Takuji Ishikawa, Meiten Koh, Tetsuhiro Kodani, Tsukasa Moriya, Tsuneo Yamashita, Takayuki Araki, Minoru Toriumi, Hirokazu Aoyama

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535098

KEYWORDS: Polymers, Absorption, Lithography, Resistance, Absorbance, Line edge roughness, Fluorine, Industrial chemicals, Transparency, Chlorine

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Proceedings Article | 14 May 2004 Paper

Airborne contamination control for 157-nm lithography: influence of ammonia contamination

Hidefumi Matsui, Junichi Kitano, Kosuke Yoshihara, Etsurou Kawaguchi, Takamitsu Furukawa, Kentaro Matsunaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534975

KEYWORDS: Contamination, Lithography, Polymers, Coating, Transmittance, Adsorption, Contamination control, Critical dimension metrology, Polymer thin films, Spectroscopy

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Proceedings Article | 14 May 2004 Paper

Advances in resist pattern transfer process using 157-nm lithography

Takamitsu Furukawa, Takuya Hagiwara, Etsurou Kawaguchi, Kentaro Matsunaga, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535177

KEYWORDS: Reactive ion etching, Lithography, Photomasks, Photoresist processing, Etching, Binary data, Semiconductors, Optical lithography, Lithographic illumination, Line edge roughness

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Proceedings Article | 14 May 2004 Paper

157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, Osamu Yokokoji

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535013

KEYWORDS: Polymers, Absorption, Standards development, Etching, Resistance, Lithography, Fluorine, Dry etching, Photomasks, Transparency

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Proceedings Article | 14 May 2004 Paper

The dissolution behavior of tetrafluoroethylene-based fluoropolymers for 157-nm resist materials

Takuji Ishikawa, Tetsuhiro Kodani, Meiten Koh, Tsukasa Moriya, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Minoru Toriumi, Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533901

KEYWORDS: Polymers, Transparency, Lithography, Fluorine, Absorbance, Photomasks, Standards development, Phase shifts, Polymer thin films, Absorption

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Proceedings Article | 14 May 2004 Paper

Evaluation of 157-nm resist structure: outgassing relationship using in situ QCM technique

Masamitsu Shirai, Toyofumi Shinozuka, Shinichi Takashiba, Yusuke Horiguchi, Shigeo Irie, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533649

KEYWORDS: Crystals, Quartz, Polymers, Chlorine, Polymethylmethacrylate, Adsorption, Fluorine, Lamps, Absorption, FT-IR spectroscopy

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Proceedings Article | 14 May 2004 Paper

Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement

Yoshinori Matsui, Shu Seki, Shiro Matsui, Seiichi Tagawa, Shigeo Irie, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534742

KEYWORDS: Spectroscopy, Lithography, Polymers, Nano opto mechanical systems, Ions, Mass spectrometry, Optical components, Carbon monoxide, Contamination, Scientific research

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Proceedings Article | 14 May 2004 Paper

157-nm resist assessment by a full-field scanner

Akihiko Otoguro, Shigeo Irie, Toshiyuki Ishimaru, Toshifumi Suganaga, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535092

KEYWORDS: Line edge roughness, Critical dimension metrology, Polymers, Lithography, Scanning electron microscopy, Semiconducting wafers, Scanners, Absorption, Dry etching, Etching

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Proceedings Article | 14 May 2004 Paper

Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)

Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533907

KEYWORDS: Polymers, Dry etching, Resistance, Etching, Chemical species, Transparency, Fluorine, Plasma etching, Lithography, Absorption

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Proceedings Article | 14 May 2004 Paper

Recent advances in fluorinated resists for application at 157 nm

Francis Houlihan, Raj Sakamuri, Andrew Romano, David Rentkiewicz, Ralph Dammel, Willard Conley, Daniel Miller, Michael Sebald, Nickolay Stepanenko, Matthias Markert, Uta Mierau, Inge Vermeir, Christoph Hohle, Toshiro Itani, Masato Shigematsu, Etsurou Kawaguchi

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537541

KEYWORDS: Transparency, Etching, Absorbance, Photomasks, Lithography, Resistance, Pellicles, Binary data, Silicon, Polymers

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Proceedings Article | 28 August 2003 Paper

Control of side-lobe intensity for attenuated phase-shifting mask in 157-nm lithography

Kunio Watanabe, Eiji Kurose, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504283

KEYWORDS: Phase shifts, Transmittance, Lithography, Electroluminescence, Photomasks, Optical lithography, Nanoimprint lithography, Optical simulations, Image transmission, Laser irradiation

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Proceedings Article | 26 June 2003 Paper

Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lens

Kunio Watanabe, Eiji Kurose, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485318

KEYWORDS: Photomasks, Binary data, Transmittance, Phase shifts, Lithography, Image resolution, Image transmission, Electroluminescence, Resolution enhancement technologies, Optical simulations

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Proceedings Article | 26 June 2003 Paper

Feasibility study of SCAAM-type Alt-PSM for 157-nm lithography

Yasutaka Morikawa, Haruo Kokubo, Kenji Noguchi, Shiho Sasaki, Hiroshi Mohri, Morihisa Hoga, Noriyoshi Kanda, Shigeo Irie, Kunio Watanabe, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485320

KEYWORDS: Lithography, Printing, Semiconducting wafers, Quartz, 3D printing, Photomasks, Scanning electron microscopy, Resolution enhancement technologies, Image resolution, 3D metrology

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Proceedings Article | 26 June 2003 Paper

157-nm lithography for 65-nm node SRAM-gate

Toshifumi Suganaga, Shigeo Irie, Seiro Miyoshi, Jae-Hwan Kim, Kunio Watanabe, Eiji Kurose, Takamitsu Furukawa, Takuya Hagiwara, Toshiyuki Ishimaru, Toshiro Itani

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485376

KEYWORDS: Optical proximity correction, Lithography, Transmittance, Photoresist processing, Resolution enhancement technologies, Silicon, Reactive ion etching, Photomasks, Monochromatic aberrations, Optical simulations

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Proceedings Article | 26 June 2003 Paper

Wavefront aberration measurement in 157-nm high numerical aperture lens

Jaehwan Kim, Toshifumi Suganaga, Kunio Watanabe, Noriyoshi Kanda, Toshiro Itani, Julian Cashmore, Malcolm Gower

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485322

KEYWORDS: Photomasks, Monochromatic aberrations, Computer aided design, Lithography, Wavefronts, Wavefront aberrations, Critical dimension metrology, Semiconducting wafers, Reticles, Semiconductors

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Proceedings Article | 26 June 2003 Paper

Development of an organic bottom antireflective coating for 157-nm lithography

Shigeo Irie, Masato Shigematsu, Seiro Miyoshi, Rikimaru Sakamoto, Kenichi Mizusawa, Yasuyuki Nakajima, Toshiro Itani

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485369

KEYWORDS: Polymers, Lithography, Refractive index, Etching, Chromophores, Reflection, Polymer thin films, Bottom antireflective coatings, Photorefractive polymers, Fluorine

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Proceedings Article | 12 June 2003 Paper

Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer

Yoshinori Matsui, Satoshi Umeda, Shiro Matsui, Shu Seki, Seiichi Tagawa, Seiichi Ishikawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485200

KEYWORDS: Polymers, Polymer thin films, Ions, Spectroscopy, Fluorine, Hydrogen, Contamination, Transparency, Silicon, Polymethylmethacrylate

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Proceedings Article | 12 June 2003 Paper

Development and characterization of new 157-nm photoresists based on advanced fluorinated polymers

Tamio Yamazaki, Takamitsu Furukawa, Toshiro Itani, Takuji Ishikawa, Meiten Koh, Takayuki Araki, Minoru Toriumi, T. Kodani, Hirokazu Aoyama, Tsuneo Yamashita

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485046

KEYWORDS: Polymers, Fluorine, Lithography, Transparency, Absorption, Polymerization, Standards development, Chemical species, Photoresist developing, Vacuum ultraviolet

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Proceedings Article | 12 June 2003 Paper

Critical dimension (CD) control in 157-nm lithography

Shinya Hori, Kosuke Yoshihara, Hideharu Kyoda, Hidefumi Matsui, Takamitsu Furukawa, Seiro Miyoshi, Etsurou Kawaguchi, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485057

KEYWORDS: Critical dimension metrology, Photoresist processing, Coating, Lithography, Line edge roughness, Fluorine, Control systems, Contamination, Polymers, Semiconducting wafers

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Proceedings Article | 12 June 2003 Paper

F2 resist outgassing studied by in situ QCM technique

Masamitsu Shirai, Toyofumi Shinozuka, Masahiro Tsunooka, Seiichi Ishikawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485090

KEYWORDS: Polymers, Crystals, Quartz, Absorption, FT-IR spectroscopy, Polymethylmethacrylate, Vacuum ultraviolet, Lamps, Excimers, Infrared spectroscopy

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Proceedings Article | 12 June 2003 Paper

Novel main-chain-fluorinated polymers for 157-nm photoresists

Minoru Toriumi, Meiten Koh, Takuji Ishikawa, T. Kodani, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Tamio Yamazaki, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485085

KEYWORDS: Polymers, Transparency, Absorption, Polymerization, Resistance, Etching, Lithography, Fluorine, Standards development, Absorbance

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Proceedings Article | 12 June 2003 Paper

Feasibility study of defects in 157-nm resist process

Shinya Wakamizu, Yukio Kiba, Etsurou Kawaguchi, Seiro Miyoshi, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485053

KEYWORDS: Nitrogen, Polymers, Fluorine, Chemical species, Photoresist processing, Light sources, Transmittance, Deep ultraviolet, 193nm lithography, Lithography

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Proceedings Article | 12 June 2003 Paper

Performances of resists for 157-nm lithography based on monocyclic fluoropolymers

Seiichi Ishikawa, Shigeo Irie, Toshiro Itani, Yasuhide Kawaguchi, Osamu Yokokoji, Shun-ichi Kodama

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485051

KEYWORDS: Polymers, Lithography, Absorption, Resistance, Fluorine, Photomasks, Transparency, Polymer thin films, Silicon, Semiconducting wafers

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Proceedings Article | 12 June 2003 Paper

157-nm bilayer resist: patterning and etching performance

Seiro Miyoshi, Takamitsu Furukawa, Etsurou Kawaguchi, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483769

KEYWORDS: Reactive ion etching, Transmittance, Etching, Photoresist processing, Fluorine, Lithography, Photomasks, Silicon, Optical lithography, Transparency

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Proceedings Article | 12 June 2003 Paper

Study of resist outgassing by F2 laser irradiation

Yasuo Itakura, Youichi Kawasa, Akira Sumitani, Seiichi Ishikawa, Shigeo Irie, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485087

KEYWORDS: Fluorine, Contamination, Transmittance, Laser irradiation, Lithography, Absorbance, Semiconducting wafers, Pulsed laser operation, Laser development, Molecules

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Proceedings Article | 12 June 2003 Paper

Dry-etching resistance of fluoropolymers for 157-nm single-layer resists

Yasuhide Kawaguchi, Jun Irisawa, Shun-ichi Kodama, Shinji Okada, Yoko Takebe, Isamu Kaneko, Osamu Yokokoji, Seiichi Ishikawa, Shigeo Irie, Takuya Hagiwara, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483735

KEYWORDS: Polymers, Resistance, Etching, Chemical species, Fluorine, Transparency, Absorption, Lithography, Semiconducting wafers, Gases

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Proceedings Article | 12 June 2003 Paper

Synthesis of novel fluorinated norbornene derivatives for 157-nm application

Meiten Koh, Takuji Ishikawa, Minoru Toriumi, Takayuki Araki, Tsuneo Yamashita, Hirokazu Aoyama, Tamio Yamazaki, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485077

KEYWORDS: Polymers, Fluorine, Transparency, Absorbance, Absorption, Chemical species, Standards development, Photoresist materials, Spectroscopy, Vacuum ultraviolet

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Proceedings Article | 28 May 2003 Paper

Selete activity of 157-nm lithography and masks

Nobuyuki Yoshioka, Toshiro Itani, Wataru Wakamiya

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515146

KEYWORDS: Photomasks, Lithography, Resolution enhancement technologies, Photoresist processing, Image resolution, Absorption, System on a chip, Transparency, Scanning electron microscopy, Tantalum

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SPIE Journal Paper | 1 October 2002

Pattern transfer processes for 157-nm lithography

Seiro Miyoshi, Takamitsu Furukawa, Hiroyuki Watanabe, Shigeo Irie, Toshiro Itani

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1507336

KEYWORDS: Reactive ion etching, Silicon, Photoresist processing, Lithography, Fluorine, Reflectivity, Interfaces, Photomasks, Optical lithography, Etching

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SPIE Journal Paper | 1 October 2002

157 nm lithography with high numerical aperture lens for the 70 nm technology node

Toshifumi Suganaga, Noriyoshi Kanda, Jae-Hwan Kim, Osamu Yamabe, Kunio Watanabe, Takamitsu Furukawa, Seiro Miyoshi, Toshiro Itani, Julian Cashmore, Malcolm Gower

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1501565

KEYWORDS: Birefringence, Lithography, Monochromatic aberrations, Semiconducting wafers, Imaging systems, Resolution enhancement technologies, Reticles, Wavefronts, Photomasks, Computer aided design

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Proceedings Article | 1 August 2002 Paper

Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography

Kunio Watanabe, Osamu Yamabe, Noriyoshi Kanda, J. Kim, Noboru Uchida, Shigeo Irie, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.477000

KEYWORDS: Photomasks, Transmittance, Lithography, Phase shifting, Image transmission, Optical proximity correction, Semiconducting wafers, Scanning electron microscopy, Resolution enhancement technologies, Optical lithography

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Proceedings Article | 30 July 2002 Paper

157-nm lithography with high numerical aperture lens for 70-nm technology node

Toshifumi Suganaga, Noriyoshi Kanda, J. Kim, Osamu Yamabe, Kunio Watanabe, Takamitsu Furukawa, Seiro Miyoshi, Toshiro Itani, Julian Cashmore, Malcolm Gower

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474606

KEYWORDS: Birefringence, Imaging systems, Resolution enhancement technologies, Monochromatic aberrations, Lithography, Silicon, Semiconducting wafers, Crystals, Interferometry, Photomasks

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Proceedings Article | 30 July 2002 Paper

Meeting the challenges of 157-nm microstepper technology

Osamu Yamabe, Noboru Uchida, Toshiro Itani

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474554

KEYWORDS: Contamination, Photomasks, Birefringence, Nitrogen, Oxygen, Lithography, Image resolution, Semiconducting wafers, Vacuum ultraviolet, Molecules

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Proceedings Article | 30 July 2002 Paper

Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography

Shigeo Irie, Noriyoshi Kanda, Kunio Watanabe, Toshifumi Suganaga, Toshiro Itani

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474553

KEYWORDS: Photomasks, Critical dimension metrology, Phase shifts, Lithography, Chromium, Resolution enhancement technologies, Diffraction, Quartz, Semiconducting wafers, Phase shifting

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In Selete, we have developed various resolution-enhancement technologies (RETs) such as the alternating phase shifting mask (alt-PSM), attenuated-PSM (att-PSM), and off-axis illumination (OAI). The alt-PSM, for example, reduces the k1 factor and extends the lithographic performance. A problem concerning the alt-PSM is the difference in the transmitted light intensities of the non-phase-shifting region and the phase-shifting region which can cause critical-dimension (CD) placement error. The transmitted light intensities of the two regions can be made equal by side-etching, in which the quartz (Qz) is undercut by wet-etching at the side of the transmitting region. We sought to optimize the mask structure in terms of a high numerical aperture (NA) through a simulation using two kinds of structures with a 157 nm exposure wavelength. The structures were a single-trench structure and a dual-trench structure, with each trench dug in the transmitting region. To attain a high NA (NA equals 0.85), we tried to optimize the parameters of the Cr film thickness, the amount of the undercut (side-etching), and the phase shift. The evaluated line pattern sizes were 70 nm (line/space size equals 70/70 nm, 70/140 nm, 70/210 nm, and 70/350 nm) and 50 nm (line/space size equals 50/50 nm, 50/100 nm, 50/150 nm, and 50/250 nm) at the wafer. Further, using the optimized mask, we calculated the lithographic margin of a sub 70 nm pattern through a simulation. For the 70 nm line patterns, we found that it will be difficult to fabricate precisely a 70 nm line patten using a mask with a single- trench structure. And we also found that the most suitable conditions for the dual-trench structure mask were a 90 nm undercut, a 100 nm Cr film thickness, and a 180 degree(s) phase shift. The exposure latitude at a depth of focus (DOF) of 0.3 micrometers , simulated using the optimized mask, was 5.3% for the 70/70 nm pattern, 3.6% for 70/140 nm 16.0% for 70/210 nm, and 29.3% for 70/350 nm. As the pitch widened, the exposure latitude increased for the 70 nm line patterns. Using the optimized dual-trench mask for 157 nm lithography, it will be able to keep the EL more than 3% at DOF of 0.3 micrometers for a 70 nm line pattern.

Proceedings Article | 30 July 2002 Paper

In-situ measurements of VUV optical materials for F2 laser

Akira Sumitani, Yasuo Itakura, Fumika Yoshida, Youichi Kawasa, Jing Zhang, Noriyoshi Kanda, Toshiro Itani

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474557

KEYWORDS: Transmittance, Vacuum ultraviolet, Laser irradiation, Laser development, Spectrophotometry, Lithography, Silicon, Sensors, Photomasks, Fluorine

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Proceedings Article | 24 July 2002 Paper

157-nm single-layer resists based on advanced fluorinated polymers

Naomi Shida, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, Minoru Toriumi, Toshiro Itani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474247

KEYWORDS: Polymers, Transparency, Standards development, Lithography, Etching, Fluorine, Vacuum ultraviolet, Dry etching, Reactive ion etching, Absorbance

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Proceedings Article | 24 July 2002 Paper

Fluoropolymer resists for 157-nm lithography

Minoru Toriumi, Naomi Shida, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, Toshiro Itani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474218

KEYWORDS: Polymers, Absorption, Lithography, Fluorine, Etching, Resistance, Transparency, Chemical species, Transmittance, Photomasks

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Proceedings Article | 24 July 2002 Paper

Pattern transfer processes for 157-nm lithography

Seiro Miyoshi, Takamitsu Furukawa, Hiroyuki Watanabe, Shigeo Irie, Toshiro Itani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474221

KEYWORDS: Reactive ion etching, Photoresist processing, Silicon, Lithography, Reflectivity, Etching, Optical lithography, Interfaces, Photomasks, Absorption

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Proceedings Article | 24 July 2002 Paper

Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization

Shun-ichi Kodama, Isamu Kaneko, Yoko Takebe, Shinji Okada, Yasuhide Kawaguchi, Naomi Shida, Seiichi Ishikawa, Minoru Toriumi, Toshiro Itani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474160

KEYWORDS: Polymers, Polymerization, Glasses, Transparency, Photoresist materials, Lithography, Phase shifts, Photomasks, Manganese, Fluorine

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Proceedings Article | 24 July 2002 Paper

Dry-etch resistance of fluorine functionalized polymers

Meiten Koh, Takuji Ishikawa, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Tamio Yamazaki, Hiroyuki Watanabe, Minoru Toriumi, Toshiro Itani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474246

KEYWORDS: Fluorine, Polymers, Etching, Dry etching, Chemical species, Resistance, Lithography, Carbon, Reactive ion etching, Data modeling

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Proceedings Article | 24 July 2002 Paper

Dissolution characteristics of resist polymers studied by quartz crystal microbalance transmission-line analysis and pKa acidity analysis

Minoru Toriumi, Toshiro Itani, Jun Yamashita, Tomomi Sekine, Kiyoharu Nakatani

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474163

KEYWORDS: Polymers, Crystals, Standards development, Quartz, Fluorine, Lithography, Photoresist processing, Liquids, Solids, Optical lithography

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Proceedings Article | 16 July 2002 Paper

Environmental control for lithography with 157-nm exposure

Junichi Kitano, Yukio Kiba, Kouichiro Inazawa, Seiro Miyoshi, Hiroyuki Watanabe, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473417

KEYWORDS: Photoresist processing, Etching, Adsorption, Lithography, Semiconducting wafers, Contamination, Dry etching, Semiconductors, Chemically amplified resists, Process control

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Proceedings Article | 16 July 2002 Paper

Defect analysis in 157-nm photolithography process

Yukio Kiba, Shinya Hori, Osamu Miyahara, Yuko Ono, Junichi Kitano, Seiro Miyoshi, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473505

KEYWORDS: Optical lithography, Lithography, Satellites, Coating, Semiconductors, Chemically amplified resists, Semiconducting wafers, Polymers, Thin films, Metrology

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Proceedings Article | 14 September 2001 Paper

Investigation of attenuated phase-shifting mask material for 157-nm lithography

Toshio Onodera, Takahiro Matsuo, Toshiro Itani, Hiroaki Morimoto

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435642

KEYWORDS: Transmittance, Photomasks, Lithography, Chromium, Tantalum, Phase shifts, Atrial fibrillation, Etching, Thin films, Resolution enhancement technologies

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Proceedings Article | 24 August 2001 Paper

Application of top surface imaging process to 157-nm lithography

Isao Satou, Manabu Watanabe, Hiroyuki Watanabe, Toshiro Itani

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436867

KEYWORDS: Photoresist processing, Lithography, Line edge roughness, Image processing, Etching, Scanning electron microscopy, Optical lithography, Photomasks, Plasma, Industrial chemicals

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Proceedings Article | 24 August 2001 Paper

Resist materials for 157-nm lithography

Minoru Toriumi, Seiichi Ishikawa, Seiro Miyoshi, Takuya Naito, Tamio Yamazaki, Manabu Watanabe, Toshiro Itani

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436868

KEYWORDS: Polymers, Absorption, Lithography, Etching, Standards development, Resistance, Photoresist materials, Transparency, Fluorine, Transmittance

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Proceedings Article | 22 January 2001 Paper

Materials for an attenuated phase-shifting mask in 157-nm lithography

Takahiro Matsuo, Toshio Onodera, Toshiro Itani, Hiroaki Morimoto, Takashi Haraguchi, Koichiro Kanayama, Tadashi Matsuo, Masao Otaki

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410703

KEYWORDS: Transmittance, Chromium, Laser irradiation, Atrial fibrillation, Vacuum ultraviolet, Phase shifts, Photomasks, Lithography, Defect inspection, Quartz

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Proceedings Article | 22 January 2001 Paper

Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle

Junji Miyazaki, Toshiro Itani, Hiroaki Morimoto

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410718

KEYWORDS: Pellicles, Monochromatic aberrations, Distortion, Lithography, Reticles, Particles, Inspection, Tolerancing, Silica, Projection systems

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Proceedings Article | 19 July 2000 Paper

Pellicle degradation and its effect on surrounding environment in ArF lithography

Junji Miyazaki, Takashi Okagawa, Keisuke Nakazawa, Toshiro Itani, Shigeto Shigematsu, Hiroaki Nakagawa

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392067

KEYWORDS: Pellicles, Laser irradiation, Lithography, Chemical analysis, Ions, Photomasks, Contamination, Molecular lasers, Quartz, Pulsed laser operation

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Proceedings Article | 23 June 2000 Paper

193-nm chemically amplified positive resists based on poly(norbornene-alt-maleic anhydride) with plasticizing additives

Hiroshi Yoshino, Toshiro Itani, Michiya Takimoto, Hiroyoshi Tanabe

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388255

KEYWORDS: Lithography, Chemically amplified resists, Polymers, Temperature metrology, Glasses, Annealing, Scanning electron microscopy, Diffusion, Photomicroscopy, Silicon

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Proceedings Article | 11 June 1999 Paper

Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists

Toshiro Itani, Hiroshi Yoshino, Masaharu Takizawa, Mitsuharu Yamana, Hiroyoshi Tanabe, Kunihiko Kasama

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350214

KEYWORDS: Polymers, Lithography, Resistance, Etching, Diffusion, Silicon, Scanning electron microscopy, Silicon films, 193nm lithography, Lithographic illumination

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Proceedings Article | 29 June 1998 Paper

Compatibility of chemically amplified photoresists with bottom antireflective coatings

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Tsuyoshi Yoshii, Hiroyoshi Tanabe

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312459

KEYWORDS: Diffusion, Chemically amplified resists, Semiconducting wafers, Bottom antireflective coatings, Photoresist materials, Silicon, Lithography, Silicon films, Excimer lasers, Reflectivity

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Proceedings Article | 29 June 1998 Paper

Deblocking reaction of chemically amplified ArF positive resists

Mitsuharu Yamana, Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, Hiroyoshi Tanabe, Kunihiko Kasama

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312429

KEYWORDS: Lithography, Polymers, Chemical analysis, Diffusion, Contamination, Temperature metrology, Silicon, Statistical analysis, Absorption, Beryllium

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Proceedings Article | 7 July 1997 Paper

Deblocking reaction of chemically amplified positive DUV resists

Mitsuharu Yamana, Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275829

KEYWORDS: Diffusion, Lithography, Deep ultraviolet, Chemically amplified resists, Chemical analysis, Air contamination, Silicon, Statistical analysis, Absorption, Beryllium

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Proceedings Article | 7 July 1997 Paper

Acid evaporation property in chemically amplified resists

Shuichi Hashimoto, Toshiro Itani, Hiroshi Yoshino, Mitsuharu Yamana, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275827

KEYWORDS: Diffusion, Electroluminescence, Absorbance, Chemically amplified resists, Lithography, Semiconducting wafers, Absorption, Ions, Scanning electron microscopy, Deep ultraviolet

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The lithographic performance of a chemically amplified resist system very much depends on the photo-generated acid structure. In a previous paper, we reported the molecular structure dependence of two typical photo-generated acids (aromatic sulfonic acid and alkyl sulfonic acid) from the viewpoints of lithographic performance and acid characteristics such as acid generation efficiency, acid diffusion behavior and acid evaporation property. In this paper, we evaluate the effect of the remaining solvent in a resist film on the acid evaporation property. Four types of two-component chemically amplified positive KrF resists were prepared consisting of tert-butoxycarbonyl (t-BOC) protected polyhydroxystyrene and sulfonic acid derivative photo-acid generator (PAG). Here, a different combination of two types of PAGs [2,4-dimethylbenzenesulfonic acid (aromatic sulfonic acid) derivative PAG and cyclohexanesulfonic acid (alkyl sulfonic acid) derivative PAG] and two types of solvents (propylene glycol monomethyl ether acetate; PGMEA and ethyl lactate; EL) were evaluated. The aromatic sulfonic acid was able to evaporate easily during post exposure bake (PEB) treatment, but the alkyl sulfonic acid was not. The higher evaporation property of aromatic sulfonic acid might be due to the higher vapor pressure and the longer acid diffusion length. Furthermore, the amount of aromatic sulfonic acid in the PGMEA resist was reduced by more than that in the EL resist. The amount of acid loss also became smaller at a higher prebake temperature. The concentration of the remaining solvent in the resist film decreased with the increasing prebake temperature. We think that the acid evaporation property was affected by the remaining solvent in the resist, film; the large amount of remaining solvent promoted the acid diffusion and eventually accelerated the acid evaporation from the resist film surface in the PGMEA resist. In summary, the acid evaporation property depends on both the acid structure and the remaining solvent in the resist film. These results can be applied to other chemically amplified resist systems to suppress the T-topping profile and achieve a superior resist performance.

Proceedings Article | 14 June 1996 Paper

Halation reduction for single-layer DUV resist processing

Hiroshi Yoshino, Toshiro Itani, Shuichi Hashimoto, Mitsuharu Yamana, Norihiko Samoto, Kunihiko Kasama

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241819

KEYWORDS: Transmittance, Photoresist processing, Deep ultraviolet, Lithography, Excimer lasers, Reflectivity, Critical dimension metrology, Absorption, Chlorine, Optical lithography

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Proceedings Article | 9 June 1995 Paper

Optimization of dissolution-rate characteristics of chemically amplified positive resist

Toshiro Itani, Haruo Iwasaki, Hiroshi Yoshino, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210399

KEYWORDS: Diffusion, Optical lithography, Lithography, Deep ultraviolet, Polymers, Scanning electron microscopy, Photography, Chemical analysis, Photoresist processing, Excimer lasers

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The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; benzenesulfonic acid derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.

Proceedings Article | 16 May 1994 Paper

Acid size effect of chemically amplified negative resist on lithographic performance

Haruo Iwasaki, Toshiro Itani, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175333

KEYWORDS: Lithography, Carbon, Diffusion, Excimer lasers, Absorption, Chemically amplified resists, Catalysis, Scanning electron microscopy, Deep ultraviolet, Chemical species

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Proceedings Article | 16 May 1994 Paper

Dissolution characteristics optimization for chemically amplified positive resist

Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175330

KEYWORDS: Lithography, Photoresist processing, Polymers, Chemical analysis, Temperature metrology, Excimer lasers, Absorption, Polymerization, Catalysis, Deep ultraviolet

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Proceedings Article | 15 September 1993 Paper

Dissolution kinetics of chemically amplified resists

Toshiro Itani, Katsuyuki Itoh, Kunihiko Kasama

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154773

KEYWORDS: Chemically amplified resists, Picture Archiving and Communication System, Chemical analysis, Deep ultraviolet, Barium, Photoresist processing, Lithography, Temperature metrology, Excimer lasers, Arsenic

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