The long-wave InAs/GaSb type II superlattice graded barrier structure was grown by MBE and applied to fabricate the various area diodes. The anodic sulfidization treatment, SiO2 film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and ion beam deposition (IBD) were combined into three methods to passivate the diodes. The variation of dark current density and the forming mechanism as related to diode sizes and measurement temperature was characterized and analyzed. The anodic sulfidization and IBD treated diodes show the worst dark current. The two groups of diodes passivated by anodic sulfidization and ICP-CVD obtained the lowest surface leakage current 3.74×10-5 A/cm2 and 5.08×10-5 A/cm2, the maximal surface resistivity 4.48×105 Ω·cm2 and 9.68×105 Ω·cm2 respectively.
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