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Dr. Tobias M. Meyer
at ams-OSRAM International GmbH
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Author
Publications (3)
Proceedings Article | 8 March 2016 Paper
Development of semipolar (11-22) LEDs on GaN templates
B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. Humphreys, F. Brunner, M. Weyers, T. Meyer, L. Lymperakis
Proceedings Volume 9768, 97681G (2016) https://doi.org/10.1117/12.2204758
KEYWORDS: Light emitting diodes, Gallium nitride, Visible radiation, Sapphire, Chemical mechanical planarization, Surface finishing, Quantum wells, Semiconducting wafers, Polarization, Indium, Indium gallium nitride
Proceedings Article | 8 May 2008 Paper
Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes
Proceedings Volume 6997, 69971U (2008) https://doi.org/10.1117/12.781314
KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Temperature metrology, Modes of laser operation, Near field optics, Near field scanning optical microscopy, Optical simulations, Thermal effects, Superposition
Proceedings Article | 8 May 2008 Paper
Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate
Proceedings Volume 6997, 699708 (2008) https://doi.org/10.1117/12.781277
KEYWORDS: Silicon carbide, Gallium nitride, Semiconductor lasers, Laser damage threshold, Quantum wells, Optical simulations, Waveguides, Electroluminescence, Indium gallium nitride, Aluminum
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