Dr. Tomasz Sochacki Profile

Dr. Tomasz Sochacki

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 9 March 2024 Presentation

Presentation

Fabrication method of GaN-air channels for embedded photonic structures

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC128860X (2024) https://doi.org/10.1117/12.3001341

KEYWORDS: Fabrication, Refractive index, Electrochemical etching, Diffraction gratings, Silicon, Ion channels, Gallium nitride, Annealing, Semiconductor lasers, Optical lithography

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Proceedings Article | 21 March 2023 Presentation

Presentation

Recent progress in bulk GaN crystal growth technology

Malgorzata Iwinska, Tomasz Sochacki, Robert Kucharski, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649109

KEYWORDS: Gallium nitride, Crystals, Semiconducting wafers, Vapor phase epitaxy, Oxides

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Proceedings Article | 21 March 2023 Presentation

Presentation

X-ray topography analysis of high perfection GaN substrates showing dynamic diffraction effects

Lutz Kirste, Thu Nhi Tran Thi Caliste, José Baruchel, Tomasz Sochacki, Robert Kucharski, Malgorzata Iwinska, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649878

KEYWORDS: X-rays, Gallium nitride, X-ray diffraction, Diffraction, Crystals, X-ray imaging, Synchrotrons, Synchrotron x-ray imaging, Image processing, Absorption

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Proceedings Article | 21 March 2023 Presentation

Presentation

Ion implantation of acceptors into gallium nitride

Kacper Sierakowski, Rafal Jakiela, Tomasz Sochacki, Malgorzata Iwinska, Piotr Jaroszynski, Michal Fijalkowski, Marcin Turek, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648256

KEYWORDS: Gallium nitride, Ion implantation, Crystals, Diffusion, Annealing, Zinc, Transistors, Optoelectronic devices, Mass spectrometry, Magnesium

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Proceedings Article | 5 March 2022 Presentation

Presentation

Carbon and manganese in semi-insulating bulk GaN crystals

Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Somakumar, Andrzej Suchocki, Michal Bockowski

Proceedings Volume PC12001, PC1200102 (2022) https://doi.org/10.1117/12.2607476

KEYWORDS: Crystals, Manganese, Carbon, Gallium nitride, Remote sensing, X-ray diffraction, Vapor phase epitaxy, Silicon, Raman spectroscopy, Oxygen

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Proceedings Article | 5 March 2022 Presentation

Presentation

How does a bulk GaN crystal grow?

Tomasz Sochacki

Proceedings Volume PC12001, PC1200101 (2022) https://doi.org/10.1117/12.2607701

KEYWORDS: Crystals, Gallium nitride, Ultraviolet radiation, Semiconducting wafers, X-ray diffraction, Sodium, Shape analysis, Optoelectronic devices, Optical microscopy, Mass spectrometry

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Proceedings Article | 5 March 2021 Presentation

Presentation

Recent progress in basic ammonothermal GaN crystal growth

Karolina Grabianska, Michal Bockowski, Boleslaw Lucznik, Robert Kucharski, Tomasz Sochacki

Proceedings Volume 11686, 116861K (2021) https://doi.org/10.1117/12.2577016

KEYWORDS: Gallium nitride, Crystals, Transistors, Vapor phase epitaxy, Sodium, Semiconductor lasers, Optoelectronic devices, High power lasers, Electronic components

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Proceedings Article | 10 March 2020 Presentation

Presentation

Recent progress in bulk GaN growth (Conference Presentation)

Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki

Proceedings Volume 11280, 1128004 (2020) https://doi.org/10.1117/12.2545062

KEYWORDS: Gallium nitride, Crystals, Doping, Manganese, Vapor phase epitaxy

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Proceedings Article | 13 March 2019 Presentation

Presentation

Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)

Michal Bockowski, Izabella Grzegory, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Mikolaj Amilusik, Malgorzata Iwinska, Aneta Sidor, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Marcin Zajac

Proceedings Volume 10918, 1091804 (2019) https://doi.org/10.1117/12.2508154

KEYWORDS: Manganese, Iron, Magnesium, Gallium nitride, Doping, Crystals, Solids, Methane, Carbon, Temperature metrology

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Proceedings Article | 13 March 2019 Presentation

Presentation

Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy (Conference Presentation)

Michal Bockowski, Michal Fijalkowski, Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Malgorzata Iwinska, Aneta Sidor, Grzegorz Kamler, Marek Oklej, Rafal Jakiela, Adam Barcz

Proceedings Volume 10918, 1091805 (2019) https://doi.org/10.1117/12.2507526

KEYWORDS: Gallium nitride, Crystals, Beryllium, Vapor phase epitaxy, Ion implantation, Electronic components, Transistors, Annealing, Nitrogen

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Proceedings Article | 14 March 2018 Presentation

Presentation

Crystallization of AlGaN by HVPE method (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053206 (2018) https://doi.org/10.1117/12.2289135

KEYWORDS: Aluminum, Crystals, Epitaxy, Gallium, Nanostructures

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Proceedings Article | 14 March 2018 Presentation

Presentation

Crystallization of HVPE-GaN:Mn with metallic Mn as dopant source (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053205 (2018) https://doi.org/10.1117/12.2289126

KEYWORDS: Manganese, Crystals, Gallium nitride, Doping, Temperature metrology, Gallium

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Proceedings Article | 26 February 2016 Paper

Paper

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, Michal Bockowski

Proceedings Volume 9748, 974809 (2016) https://doi.org/10.1117/12.2208854

KEYWORDS: Gallium nitride, Silicon, Semiconducting wafers, Crystals, Sapphire, Etching, Raman spectroscopy, Molybdenum, Reflection, Photomasks

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Proceedings Article | 13 March 2015 Paper

Paper

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

M. Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, M. Iwinska, J. Weyher, E. Grzanka, P. Krupczynska, A. Khachapuridze, I. Grzegory, M. Bockowski

Proceedings Volume 9363, 93630F (2015) https://doi.org/10.1117/12.2077929

KEYWORDS: Crystals, Gallium nitride, Hydrogen, Nitrogen, Gases, Raman spectroscopy, Oxygen, Silicon, Quartz, Interfaces

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Proceedings Article | 4 March 2013 Paper

Paper

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory

Proceedings Volume 8625, 862509 (2013) https://doi.org/10.1117/12.2002042

KEYWORDS: Crystals, Gallium nitride, Gallium, Nitrogen, Oxygen, Liquids, Indium, Magnesium, Liquid crystals, Polishing

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Proceedings Article | 4 March 2013 Paper

Paper

HVPE-GaN growth on ammonothermal GaN crystals

Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Michal Boćkowski, Janusz Weyher, Grzegorz Nowak, Bogdan Sadovyi, Grzegorz Kamler, Izabella Grzegory, Robert Kucharski, Marcin Zajac, Robert Doradzinski, Robert Dwilinski

Proceedings Volume 8625, 86250B (2013) https://doi.org/10.1117/12.2003699

KEYWORDS: Crystals, Gallium nitride, Annealing, Surface finishing, Polishing, Interfaces, Gallium, Etching, X-rays, Quartz

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Showing 5 of 16 publications

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