A silicon (Si)-based, large-scale optical I/O chip will be a key device for a large-bandwidth, low-cost optical
interconnection employed in future high-performance computing systems. For these Si optical I/O chips, a significant
improvement in energy cost is strongly expected, hence, the use of micro ring-resonator (RR) based modulator is
assumed to be a promising approach. In order to handle a narrow and temperature-dependent operation bandwidth of the
RR-based modulator, we have proposed a novel Si transmitter that uses a cascaded RR MZ modulator and RR-based Si
hybrid laser. The RR-based Si hybrid laser is an external cavity laser integrating an InP SOA and a Si mirror chip
comprising a RR and DBR mirror. The SOA is flip-chip bonded to the Si mirror chip utilizing a precise flip-chip
bonding technology. The fabricated Si hybrid laser exhibited a low threshold current of 9.4mA, a high output power of
<15 mW, and a large wall-plug efficiency of 7.6% at 20°C. In addition, the device maintained a stable single longitudinal
mode lasing and a low RIN level of <-130 dB/Hz for 20-60°C. We also fabricated an integrated Si transmitter combining
a cascaded RR MZ modulator and RR-based Si hybrid laser. The 20-RR cascaded MZ modulator exhibited a 1-nm
operation bandwidth using multiple low-Q RRs. The modulator was driven with 10Gbps PRBS signal. For a temperature
range between 25 and 60°C, the lasing wavelength exhibited a red-shift of 2.5 nm, nevertheless, we confirmed clear eye
openings without adjusting the operating wavelength of the modulator.
This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as
ultrawide-band high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters.
This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawide-band high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters.
This paper provides current status and prospects of quantum-dot semiconductor optical amplifiers, based on our pioneering
work covering the proposal of their promising features, the quantum-dot optical device theory, experimental demonstrations,
and the design and assembly of all-optical switching modules.
This paper provides prospects and current status of quantum-dot semiconductor optical amplifiers (SOAs) and their comparison with bulk and quantum-well technology, based on our pioneering work covering the proposal of their promising features, subsequent experimental demonstrations, and the design of all-optical quantum-dot switching modules. The proposed promising features are diverse; high-saturation power, high-speed amplification up to 160 Gb/s under gain saturation without pattern effect, high-speed cross-gain modulation up to 160 Gb/s without pattern effect, multiple-wavelength processing over broad gain spectra, and symmetric wavelength conversion by four-wave mixing. The operation theory of quantum-dot SOAs is provided in order to treat various aspects unique to quantum dots such as spatial localization, retarded carrier relaxation, and inhomogeneous and homogeneous broadening. Pattern-effect-free amplification at 10-40Gb/s, wavelength conversion by the cross-gain modulation at 10-40Gb/s, and symmetric wavelength conversion by four-wave mixing are experimentally demonstrated in 1.3-micron InGaAs/GaAs quantum-dot SOAs. All-optical quantum-dot switching modules are proposed, which we expect to work in the next-generation flexible all-optical photonic networks.
We report the near-infrared intersubband absorption characteristics in In (formula available in paper) heterostructures lattice matched in InP substrate. We have investigated for the first time the excitation power dependence of the intersubband transitions in Sb based quantum wells using a femtosecond optical parametric amplifier tuned over wavelength ranging from 1.8 micrometers - 2.4 micrometers . The bandgap of the InGaAs material system in the regime of 1.0 eV facilitates nonlinear interband optical absorption effects in the presence of strong near-infrared intersubband resonant optical excitation. We have observed a novel nonlinear optical phenomenon,- an intersubband transition induced interband absorption due to the two- photon interband excitation after the onset of the intersubband absorption saturation. The excitation wavelength-dependence of the absorption saturation characteristics has also been studied. The absorption saturation measurements have been performed in quantum wells with various well widths.
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