InxGa1-xAs bulk crystal is a lattice-matched substrate material for InGaAs-based laser diodes. We prepared an InxGa1-xAs
with compositional fractions x ranging from 0 to 0.2 and the effect of Er impurity on the photoluminescence (PL) and
Raman characterization of an Er-implanted InxGa1-xAs bulk crystal was studied. From the results of PL and Raman
spectroscopy, it was found that the implantation damage in InxGa1-xAs:Er sample is recovered at a temperature of 700°C
by the thermal annealing. Maximum PL intensity of Er-related emission was obtained for the InxGa1-xAs:Er sample
annealed at 700°C in the compositional fractions ranging from 0 to 0.2.
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