KEYWORDS: Critical dimension metrology, Scanning transmission electron microscopy, Line edge roughness, Edge roughness, Scanning electron microscopy, Electron microscopes, Cadmium, Atomic force microscopy, Etching, Line width roughness
This study demonstrates the MPPC (Multiple Parameters Profile Characterization) measurement method utilizing ArF photo resist patterns. MPPC is a technique for estimating the three dimensional profile of patterns which are imaged and measured on the CD-SEM (critical dimension scanning electron microscope). MPPC utilizes the secondary electron signal to calculate several indices including top CD, peak CD, top rounding, bottom footing, etc.
This primary focused of this study is to understand the variations in pattern profile caused by changes in exposure condition. The results demonstrate the ability to extract pattern profile shape information by MPPC measurement that could not otherwise be detected by a conventional bottom CD measurement method. Furthermore, the results were compared to cross sectional images collected by STEM (scanning transmission electron microscope) to verify the accuracy of the MPPC technique. The peak CD results accurately estimate the pattern width when the sidewall angle of the feature is nearly vertical. Additionally, line edge roughness (LER) caused by pattern profile variations was evaluated utilizing MPPC. The results suggest that MPPC may be utilized to evaluate the roughness over the entire profile.
We investigated various exposure procedures to minimize the Critical Dimension (CD) variation for the patterning of sub- quarter micron gates. To examine dependence of the CD variation on the pattern pitch and defocus conditions, the light intensity profiles of four different mask structures: (1) a binary mask with clear field, (2) a binary mask with dark field, (3) a phase-edge type phase-shifting mask (a phase-edge PSM) with clear field, and (4) a halftone phase- shifting mask (a halftone PSM) were compared, where exposure wavelength was 248 nm and numerical aperture (NA) of KrF stepper was 0.55. For 200-nm gate patterns, dependence of the CD variation on the pattern pitch and defocus conditions was minimized by a phase-edge PSM with clear field. By optimizing the illumination condition for a phase-edge PSM exposure, we obtained the CD variation of 10 nm at the minimum gate pitch of 0.8 micrometer and the defocus condition of plus or minus 0.4 micrometer. Applying the optimized exposure procedure to the device fabrication process, we obtained the total CD variation of plus or minus 27 nm.
Chemical amplification negative resist system composed of a novolak resin, a carbinol and an acid generator is investigated for i-line phase-shift lithography. The reaction in this resist is based on an acid-catalyzed intramolecular dehydration reaction. The dehydration products act as aqueous-base dissolution inhibitors, and carbinol compounds in unexposed areas work as dissolution promoters. The resist composed of a novolak resin, 1,4-bis((alpha) -hydroxyisopropyl) benzene (DIOL-1) and 2- naphthoylmethyltetramethylenesulfonium triflate (PAG-2) gives the best lithographic performance in terms of sensitivity and resolution. Line-and-space patterns of 0.275 micrometers are obtained using an i-line stepper (NA:0.45) in conjunction with a phase shifting mask.
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