We report an optical–electrical (OE) oscillator using two new key components (a high-power integrated photoreceiver module and a low-driving-voltage lithium niobite (LN) Mach–Zehnder modulator (MZM)) to configure key parts of the entire OE oscillator system. A 60-GHz narrowband photoreceiver module integrated with a 60-GHz photodetector chip with a gain emphasis circuit and a 60-GHz high-power amplifier chip was designed and fabricated. By increasing the input photocurrent to 5 mA at 60 GHz, we successfully achieved a 1-dB power compression level of +16 dBm with good output linearity. The LN-based bulk MZM was specially designed to decrease the driving voltage to 1.5 V by optimizing both the waveguide and electrode length at high frequencies. Excellent performance with a -5 dB insertion loss at 60 GHz was achieved. The OE oscillator system was configured via a feedback loop using optical and electrical components, which primarily consisted of the newly developed photoreceiver and MZM through a 100 m–1 km long optical fiber. We successfully demonstrated -106 dBc/Hz at a 10-kHz offset near 60 GHz. The design and fabrication of the OE system are discussed in detail herein.
Efficient functionalization of the silicon nitride waveguide with bioreceptors, e.g. antibodies, is key to increase antigen binding activity in photonic sensors based on silicon nitride (SiN) waveguides. A bioreceptor coating technique using silica nanoparticles (NPs) to enhance the density of functionalized antibodies, by increasing the surface areas for biomolecule binding, is proposed. The detection of S100 Calcium-Binding Protein A6 (S100A6), a proposed cholangiocarcinoma marker, has been demonstrated using the SiN resonator sensor with 400nm thick waveguide, fabricated by low-cost 500 nm technology. The NPs were synthesized by silica condensation. Antibodies were attached to the NPs by 1-ethyl-3-(3- dimethyl aminopropyl)–carbodiimide (EDC)/ N-hydroxysuccinimide (NHS)-crosslinking. Then the NPs were coated on SiN sensor by N-terminal to N-terminal crosslinkers. It was found that the application of silica NPs coating showed increased sensor sensitivity at approximately 8.8 pm/(ng/ml) in optical resonant wavelength shift compared to 0.36 pm/(ng/ml) by our previous antibody coating technique using (3-Aminopropyl) triethoxysilane (APTES) silanization with EDC/NHS protein crosslink.
We investigated a growth technique for ultra-low-density self-assembled InAs QDs using Bi surfactant-assisted interdiffusion epitaxy (IDE). The samples were grown using a solid-source molecular beam epitaxy system. InP(311)B substrates were used to grow InAs QDs. After growing the InP buffer layer, a 100 nm-thick InGaAlAs barrier layer and a 1 nm-thick InP were used for the IDE process, and self-assembled InAs QD were formed. The density of QDs was very low, approximately 3.2×107/cm2, which is three orders of magnitude smaller than that of the conventional QD. Moreover, sharp photoluminescence was observed from a single QD at 1522 nm.
We present a 100-GHz narrowband optical-to-radio converter driven by power over fiber (PoF), and discuss about the fundamental radio over fiber communication performance and the settling time performance in radio launching driven by PoF. The 100-GHz optical-to-radio converter consists of a zero-bias operational 100-GHz UTC-PD and a 100-GHz GaAs-based enhancement type pHEMT amplifier. The generated electrical power through a power converter in PoF was applied to the drain bias, and the generated small power through the UTC-PD was applied to the gate bias. While turning ON/OFF optical power rapidly in PoF, the settling performance in 100-GHz radio launching was investigated.
KEYWORDS: Optical signal processing, Wireless communications, Telecommunications, Radio optics, Phase retrieval, Free space optics, Optical instrument design, Signal to noise ratio, Signal detection, Reconstruction algorithms
In this paper, we present the design and fabrication of a newly developed high speed two-dimensional photodetector array device, and its application for optical signal processing in advanced fiber communications and advanced optical wireless communications. The PD array device configured with 6 x 6 square shape alignment arrangement was designed, which gave us multi-parallel output configuration at over 10 GHz, as well as a large photodetective area. In application for optical signal processing, a phase retrieval coherent receiver, space diversity optical wireless receiver, and its related technology will be introduced.
We developed an economical assembly for a silicon photonics resonator device including a device mount and lensed fiber holders for input and output fibers. The parts are fabricated by 3D printing technology using resin with digital light processing (DLP) technique and cured with UV light (405nm). The lensed fibers are aligned to the device waveguides using 6-axis aligner platform and their holders are affixed to the device mount by UV glue. Our in-house assembly module is able to firmly affix the fiber holders to the device mount and align the input and output lens fibers to the device spot size converter (SSC) of dimension 3.4 × 3.5 μm2. After alignment completion, the assembly can be detached from the aligner stage to be used in un-stabilized benchtop measurement system. The benchtop measurement system for the silicon photonic sensor device consists of a tunable laser, a polarizer, an optical power meter, and a container housing the device assembly, peristalsis pump and control circuits that was developed inhouse for microfluidics control having flow rate in the level of nanoliter/minute. In addition, a software has been developed for the measurement of the device resonant wavelength and wavelength shift due to sensor activity. We have demonstrated that the silicon photonics resonator that has been mounted on our assembly in the above measurement system showed acceptable performance by comparing the results with those obtained by mounting the device on stabilized fiber alignment platform. Thus, the 3D printed assembly may be used for silicon photonics device mount in early portable sensor prototype development.
KEYWORDS: Power supplies, Optical fibers, Radio over Fiber, Phase only filters, Hybrid fiber radio, Photodetectors, Space division multiplexing, Multiplexing, Receivers, Signal attenuation
We present a newly developed 90-GHz high O/E conversion efficient, high power photoreceiver for radio over fiber transmission, which is driven by photonic power supplies. The photoreceiver consisted of a hybrid integration with a 100 GHz photodetector and a 22-dB high gain RF amplifier. To save the fiber resources in the PoF system, bias-free operational design was employed for the photodetector. In the RF measurement result, we successfully achieved the high output power of +15 -dBm at 90-GHz, high linearity in RF output power against the input photo-current, and high 3dB bandwidth of 14 GHz (85-99 GHz).
In this study, we fabricated QD laser diodes using a digital embedding method (DEM) in which InAs QDs were embedded in an InGaAs/InAlAs superlattice whose miniband acts as an effective barrier for the QDs. We stacked 15 QD layers by using DEM with four monolayers in each InGaAs/InAlAs superlattice. The stripe laser structures were fabricated using conventional laser diode processes. The laser with a 600-µm cavity showed lasing at 1600 nm with a threshold current of 474 mA. The internal loss of this laser was 16.2 cm-1, which was similar that of the laser that uses a conventional quaternary InGaAlAs barrier material.
KEYWORDS: Optical fibers, Photodetectors, Personal digital assistants, Optical alignment, Electromagnetism, Metals, Waveguides, Signal detection, Light sources and illumination, Data communications
In this study, a high speed two-dimensional photodetector array (2D-PDA) was fabricated for the receipt of transmission signals from multi-core and few-mode fibers. With respect to the multi-core fiber (MCF) designs, the same square-shaped or triangular alignment arrangement as that used in a 19–32 MCF was applied to the 2D-PDA design layout. For a high-density integration with narrow gaps, the typical photodetector’s (PD) pixel size was set within the range of 10 m. The measured 3dB bandwidths were obtained from 20–26.5 GHz for all the pixels. No defects were observed in the pixels. With the constant gap between the pixels, the crosstalk due to the electromagnetic field from a neighboring pixel or wiring was measured using a lightwave component analyzer in the frequency range of 0.1–50 GHz. Under the light-ON condition for all the other pixels, with the exception of a center or corner pixel, the crosstalk at the center pixel was compared with that at the corner pixel. A difference of 1.2 dB at BER = 1 × 10-4 was found between them. A larger crosstalk was observed at the center pixel than at the outer pixel. A discussion on the origin of the crosstalk in the 2D-PDA is presented further in the manuscript, along with the electromagnetic (EM) simulation results.
The development of advanced power grids is necessary to expand mankind’s habitat into previously uninhabitable regions, such as deep space or sea. Wired electrical or gas pipeline networks have been conventionally used to construct effective power grids. However, the use of metal wires or pipes in extreme environments is considered problematic. Therefore, wireless power grids are considered to be useful and technologically advanced alternatives for applications in deep space or sea. In this report, we discuss an optical wireless power grid for an artificial space satellite network that uses a high-power laser and high-efficiency optoelectric (OE) converter technologies. We estimate a high-energy transport efficiency of 8.5 % between the power units in two artificial satellites that utilize a free-space optical connection based on a high-power laser and an OE converter. Based on these considerations, we expect that optical wireless power grids that utilize free-space optical networks will emerge as a cutting-edge technology to achieve power interchange between a large number of small space satellites.
KEYWORDS: Photodetectors, Optical fibers, Metals, Single mode fibers, Gold, Optical instrument design, Multiplexers, Signal processing, Personal digital assistants, Signal detection
We designed and fabricated a high-bandwidth, 32-pixel, two-dimensional photodetector array (2D-PDA) for receiving transmission signals from multi-core and few-mode fibers. Pixel sizes of 10, 20, and 30 μm were employed, with a pixel gap of 14 μm. We obtained 3 dB bandwidths of 23.8~29.8 GHz, 19.1~20.8 GHz, and 9.0~13.7 GHz for pixel sizes of 10, 20, and 30 μm, respectively. The device exhibited increasing noise due to RF crosstalk, which was caused by neighboring wires or pixels. In this study, we explored different pixel arrangements to reduce the crosstalk between neighboring pixels, and confirmed the frequency characteristics of the 2D-PDA pixels. Moreover, using electromagnetic simulation software, the RF crosstalk of -30 dB between neighboring pixels was confirmed up to the 10–20 GHz range. The crosstalk analysis, crosstalk reduction design in 2D-PDA devices, and its experimental results are displayed and discussed.
KEYWORDS: Signal detection, Multiplexing, Personal digital assistants, Digital signal processing, Phase shifts, Signal processing, Target detection, Heterodyning, Spatial filters, Optical fibers
Spatial division multiplexing (SDM) is crucial for ultra-high capacity optical fiber transmission. In addition to SDM using multi-core fiber, multi-modal multiplexing using multi-mode fiber is another option. MDM and OAM are intensively investigated. For any SDM transmission, typical ways are based on optical fan-in and -out devices for multiplexing and demultiplexing tributaries. In this paper, spatial coherent matched detection is investigated for showing the capability of multi-modal coherent detection, where such SDM signals are received without using optical fan-out devices. Numerical proof focusing on reception of high-speed SDM coherent multilevel signals is provided.
In medical diagnostics there is an increasing demand for biosensors that can specifically detect biological analytes in a fluid. Especially label-free sensing, consistings of a transducer with biorecognition molecules immobilized on its surface without relying on fluorescent dye. In this paper we study the design and fabrication of a silicon nanowire photonic ring resonator and its feasibility as a biosensor. We have simulated and fabricated racetrack ring resonators which have a few tenths of micrometer gap, up to 0.5 μm between the input / output waveguides and the resonators. It is found that the devices can be designed with large Q factors. Sensitivity to biomaterial detection has been simulated for antibody (goat anti-mouse IgG) - antigen (mouse IgG) using 3-dimensional Finite Difference Time Domain technique. The simulated results show that the ring resonator has a response 15 nm resonance shift per refractive index unit. Antibody coating method is also discussed in this paper which can be applied to other antibody-antigen types.
We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75–110 GHz) and G-band (140–220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.
We investigated the temperature characteristics of a modularized semiconductor optical amplifier (SOA) utilizing InAs/AlGaAs quantum dot (QD) in the active layer operating at C-band (1.53μm–1.56μm). It has been reported by many literatures on physics that QDs are superior at energy efficiency and leads to less thermal energy generation. By changing the temperature of the Peltier element inside the module from 20℃ to 80℃, we measured the difference in the gain at each input power and injection current. The QD-SOA we measured was utilizing InAs QD in active layer and the laminated structure had 20 layers having 20nm of intermediate layers which refers to the width between QDs. When the input power was -50 dBm, we successfully confirmed more than 10 dB at the Peltier element temperature of 70℃ by injecting a current larger than 400 mA. In addition, we obtained a maximum gain of 20.68 dB at the center wavelength and a constant gain of approximately 15 dB at other Peltier element temperatures. It can be concluded from the output of the experiment that this QD-SOA can be put to use in optical communication in several situations where the temperature ranges between 20℃ to 80℃. This involves a new approach towards the application of QD amplifiers in the field of optical fiber communications.
Optical power-delivery systems are applied to distribute electrical power over optical fibers for systems such as remote wireless radio heads. Typically, the electrical voltage at the receiver side is low, around 1.0 V, owing to the use of a long-wavelength carrier. Consequently, we recently proposed a light-wave-modulation method for increasing the received electrical voltage. A 940-nm high-power laser was directly modulated to form a modulated light wave. We also used a small inductor to generate an induced electromotive force from the modulated light wave. We successfully obtained a peak voltage over 18 V using this simple technique.
We present a double cladding, high-mesa-type waveguide UTC photodetector with an improved the responsivity. In this device structure, an InGaAs thin core layer was sandwiched by p-InP/InGaAsP and n-InP/InGaAsP cladding layers, including a UTC structure, in order to obtain a good optical coupling between the waveguide and the fiber. By comparing the resulting mode field with that obtained with a single cladding layer structure, we confirmed that the vertical mode field was enlarged. Without a spot size converter, the measured responsivity was as high as 0.6 A/W at 1550 nm, which suggests a responsivity three times higher than that of back-illuminated structures, and higher responsivity than that of previous reports. A high frequency performance (f3dB = 100 GHz) was also measured. The device structure, including the layer, doping level conditions, and optical fiber coupling results are discussed, and its performance is characterized in detail.
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000–1260 nm, Original band: 1260–1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.
High-performance photodetectors (PDs) for radio over fiber (RoF) applications over 60 GHz were designed and fabricated. The RF output was investigated while a high linearity was observed for two designs: a low carrier concentration InGaAs absorption layer in a PIN structure and a low carrier concentration collection layer in a unitravelling- carrier (UTC) structure. The RF output performances of both PIN and UTC structures were studied at 67 GHz and 100 GHz respectively. High photocurrent densities could be obtained from both structures (21.7 kA/cm2 in the PIN structure and 35.4 kA/cm2 in the UTC structure). The PIN structure exhibited a slightly higher current density of 1.6 times than the UTC structure. The frequency response of the UTC-PD exhibited excellent flatness up to 110 GHz, with a 3 dB bandwidth beyond 110 GHz. In addition, maximum RF output powers of +6.8 dBm at 67 GHz and -5 dBm at 100 GHz was successfully obtained. The space charge effect could be ruled out for the output linearity, but avoiding overheating in the p-contact metal had to be considered. By modifying impedance matching circuit designs, the maximum RF output power level of 3 dB can be improved.
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