We have been developing monolithic active pixel sensors, X-ray SOIPIXs based on a Silicon-On-Insulator CMOS technology. Its event trigger output function offers a high time resolution better than ~10 usec. (1) We report the device structure optimized to achieve both low noise, a thick depletion layer, and to non-punch-through. (2) We succeeded in achieving an energy resolution of ~300 eV (FWHM) at 6 keV with a depletion layer of 300 um at room temperature by operating frequent reset to reduce the shot noise. (3) We present the development of "Digital X-ray SOIPIXs" having on-chip ADCs, DACs and readout sequencers.
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