In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited
under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of
hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is
proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative
recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results
show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with
GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high
current injection, the internal quantum efficiency and output light power are markedly improved when the traditional
GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed
LED has promising potential in solid state lighting.
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