Prof. Tzer-En Nee Profile

Prof. Tzer-En Nee

Assistant Professor at Chang Gung Univ

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Author

Publications (7)

Proceedings Article | 8 February 2007 Paper

Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures

Cheng-Wei Hung, Chih-Chun Ke, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, Tzer-En Nee

Proceedings Volume 6473, 64730C (2007) https://doi.org/10.1117/12.703478

KEYWORDS: Quantum wells, Luminescence, Heterojunctions, Optical properties, Temperature metrology, Indium, Aluminum, Nanostructures, Crystals, Chemical species

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Proceedings Article | 8 February 2007 Paper

Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures

Chih-Chun Ke, Cheng-Wei Hung, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, Tzer-En Nee

Proceedings Volume 6473, 64730B (2007) https://doi.org/10.1117/12.703472

KEYWORDS: Polarization, Indium, Quantum wells, Heterojunctions, Luminescence, Gallium nitride, Carrier dynamics, Interfaces, Light emitting diodes, Aluminum

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Proceedings Article | 8 February 2007 Paper

Characterization of the carrier localization confinement for InGaN/GaN multiple quantum well heterostructures with hydrogen-flow treatments

Ta-Chuan Kuo, Wei-Jen Chen, Chih-Chun Ke, Cheng-Wei Hung, Hui-Tang Shen, Jen-Cheng Wang, Ya-Fen Wu, Tzer-En Nee

Proceedings Volume 6473, 64730D (2007) https://doi.org/10.1117/12.700532

KEYWORDS: Hydrogen, Quantum wells, Heterojunctions, Light emitting diodes, Gallium nitride, Electroluminescence, Indium, Quantum efficiency, Luminescence, Temperature metrology

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Proceedings Article | 7 February 2007 Paper

The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes

Wei-Jen Chen, Da-Chuan Kuo, Cheng-Wei Hung, Chih-Chun Ke, Hui-Tang Shen, Jen-Cheng Wang, Ya-Fen Wu, Tzer-En Nee

Proceedings Volume 6468, 64680T (2007) https://doi.org/10.1117/12.700447

KEYWORDS: Temperature metrology, Light emitting diodes, Electroluminescence, Quantum wells, Heterojunctions, Polarization, Gallium nitride, Thermal effects, Green light emitting diodes, Metals

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Proceedings Article | 14 April 2006 Paper

Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers

Po-Chun Lin, Chih-Chun Shen, Jen-Cheng Wang, Ray-Ming Lin, Tzer-En Nee

Proceedings Volume 6184, 61841L (2006) https://doi.org/10.1117/12.661116

KEYWORDS: Gallium nitride, Heterojunctions, Light emitting diodes, Temperature metrology, Luminescence, Carrier dynamics, Quantum efficiency, Blue light emitting diodes, Electroluminescence, Quantum wells

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Proceedings Article | 28 April 2005 Paper

Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers

Ray-Ming Lin, Jen-Cheng Wang, Chung-Han Lin, Tzer-En Nee

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589958

KEYWORDS: Electroluminescence, Quantum wells, Light emitting diodes, Gallium nitride, Quantum efficiency, Blue light emitting diodes, Diodes, Indium gallium nitride, Luminescence, Metals

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Proceedings Article | 29 April 2003 Paper

Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio

Shiang Feng Tang, Shih Yen Lin, S. T. Yang, ChengDer Chiang, Ya-Tung Cherng, H. T. Shen, T. E. Nee, Ray Lin, Min Yu Hsu

Proceedings Volume 5118, (2003) https://doi.org/10.1117/12.498276

KEYWORDS: Indium arsenide, Gallium arsenide, Luminescence, Quantum dots, Indium, Atomic force microscopy, 3D image processing, Epitaxy, Vapor phase epitaxy, Natural surfaces

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Showing 5 of 7 publications

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