The efficiency droop in InGaN-based 380nm UV light emitting device (LED) with n-GaN and n-AlGaN underlayer
grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD) was investigated. From simulation
result of high resolution x-ray diffraction (HRXRD) ω-2θ curve by using dynamical diffraction theory, the Al
composition in the n-AlGaN layer was determined to be about 3%. The experimental results of temperature dependent
photoluminescence (PL) demonstrated that the internal quantum efficiency (IQE) of n-GaN and n-AlGaN UV-LEDs are
43% and 39%, respectively, which are corresponding to an injected carrier density of 8.5 × 1017 #/cm3. It could be
explained that the crystal quality of n-GaN is better than of n-AlGaN. In addition, the observation of pit density from
atomic force microscopy (AFM) surface morphology is consistent with the interpretation. It was well-known that the pits
appearing on the surface in the virtue of the threading dislocations. Thus, it means that defects induce the non-radiative
centers and deteriorate the IQE of the UV-LED with n-AlGaN underlayer. Therefore, the light output power of n-GaN
UV-LED is slightly higher below the forward current of 250 mA. Nevertheless, the output power was enhanced about
22% as the injection current was increased to 600 mA. Furthermore, the external quantum efficiency (EQE) of n-AlGaN
UV-LED was nearly retained at the 600 mA (only 20% droop), whereas the UV-LED with n-GaN exhibits as high as
33%. We attributed this improvement to the less self-absoption by replacing n-GaN underlayer with n-AlGaN.
In this study, we propose to enhance an output power for 380 nm UV-LED with a hexagonal pyramid structures (HPS)
on the interface of sidewall between AlGaN and AlN layers. The HPS are formed by inserting a 50 nm AlN as a
sacrificial layer in n-AlGaN than using a selective wet etching process in KOH solution at 90 °C for 60 min. From the
scanning electron microscope (SEM) image, the HPS can be clearly seen on the interface of AlGaN, the facet angles and
the average of structure height of pyramid are 58° and 0.5-μm, respectively. According to the electroluminescent (EL)
results, 12% enhancement of the light extraction efficiency can be expected in the UV-LED with HPS. Furthermore, we
measured the output power at 20 mA between the UV-LED with and without HPS are 2.69 mW and 3.01 mW,
respectively. As a result, the light extraction efficiency can be improved by this approach because of changing the routes
of light reflection around the sidewall.
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