Anisotropy has been predicted of the energy flux of radiation in 'isotropic' semiconductor stripe laser pumped with an electron beam. The physical basis of the effect has been delivered by the worked out model of an acoustically active laser medium that directly results in the sought anisotropy of the output energy flux of radiation emanating from the cavity if a rate of the acoustic phonons generation is taking into account. Profound exposing of an integral output lasing power to an excited phonon fluxes has been derived for the pulsed strip-light-emitters designed on the basis of 6mm semiconductors. Quantitative analysis has been done for the strip laser with a fixed slit aperture on the basal plane of the (0001) CdS plate. For the longitudinal geometry of pumping, in the framework of the model put forward a difference has been predicted in the integral output power of lasing delivered through the output (0001) face of the devices in the form ΔP = Amτwj2f, where Am is the medium factor, τw is the photon lifetime relatively to the output, j is the pumping current density, f is the cavity form factor. Overall, acoustic impact has been revealed on the lasing anisotropy, an additional source has been manifested
of the pumping losses, relationship has been established between the strip laser beam shape and the laser performance, the method based on the carrier lifetime approach has been additionally proposed to study phenomenon, understanding and direct calculating have been advanced of the performance of the considered type emitters.
The self-channeling of cylindrical light beams versus the excitation density, light frequency, and crystallographic orientation is numerically analyzed in GaAs, ZnSe, CdS semiconductors. A comparison of the data obtained and reported for diode and streamer semiconductor lasers is made. Made out of reversing of the angular anisotropy of the real third order nonlinear optical susceptibility is worthy to be studied for a practical implementation.
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