Local skin temperature is one of the most sensitive parameters that is changed in cases of inflammations. The paper presents theoretical basis of the technique and the original device for temperature gradient measurements. Designed automated complex "Thermodyn" for remote non-contact diagnostics of inflammatory processes of the surfaces and in subcutaneous areas of human body can record and analyze received data. The results are displayed as tables and graphs that can be compared with standard values and in the most common cases the preliminary diagnoses can be made. The results of practical applications of this complex for various clinical cases were given.
An analytical approach for determine the acoustic phonon dispersion relation in the qusi-2D nanosystems such as flat ultra-thin flat films is represented there. Method is based on the representation the components of polarization vectors for all possible phonon branches in the film of finite thickness as appropriate Fourier series. This made it possible to establish the analytical dependencies of energy on the frequency for all branches of the acoustic phonon spectrum in ultra-thin films. Such results can allow an analytical investigations of the electron spectra transformations that caused by electrons interaction with acoustic phonons in the ultra-thin films by variation of their thicknesses.
The energy of ground state of electron, hole and exiton in quasi-two-dimensional semiconductor nanoheterostructure with quantum well (nanofilm) are calculated by using the dielectric continuum model, approximation of effective masses and Green’s function method. Dependence of these energies on nanofilms thickness and barrier material composition have been studied taken into account effects of quantum confinement, self-polarization of the heterojunction planes and interaction with warious branches of optical phonons in such nanohetrostructures. Specific calculation was made for nanofilm GaN embedded in barrier material AlxGa1-xN, both of him have wurtzite-type structure. It has been studied on this base the influence of changes of nanofilm thickness and barrier material composition on the spectral location the electron absorption edge and exciton peaks in such nanoheterostructures. The results of this study may be of practical interest, since excitons provide a sensitive indicator of material quality.
We represent here the theoretical justifications, block scheme and experimental sample of a new automated complex "Thermodyn" for remote contactless diagnostics of inflammatory processes of the surfaces and in subcutaneous areas of human body. Also we described here the methods and results of diagnostic measurements, and results of practical applications of this complex.
We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.
The results of theoretical investigation of the peculiarities of exciton-phonon interaction in ε-InSe and its influence on
the absorption spectrum in the domain of transitions into basic and higher exciton states are represented in this paper.
The values of maximum shift of the corresponding exciton band and its half-width were calculated taking into account
the interaction with low-energy and conventional longitudinal optical phonons and with oscillations of the bend wave
important for layered crystals. For the bands connected with direct vertical transitions into the basic and higher exciton
states the temperature changes of their partial shifts and extensions caused by the interaction with each of the mentioned
branches of the phonon spectrum were studied.
The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of
exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI2 as an
example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization
region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the
hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer
crystal structure.
The theoretical investigation of the role of bending waves in the process of creating conditions for observing optical
bistability in layer semiconductors was performed by the Green function method. Using the 2H-polytype of Pb12 as an
example. we showed that effective exciton scattering by oscillations of this type leads to a short wave shift of the
frequency tegion. the decrease of its sizes. the widening of the temperature interval optical bistability realization of its
observing, the shill the hysteresis loop into bigger intensities and the decrease of its height and width.
The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB)
realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype
PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type
leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing
temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and
width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light
polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.
The reasons of experimentally observed in 2H- and 4H-politypes of layer semiconductor PbI2 anomalous
temperature-depending behavior of the exciton absorption bands in the low-temperature region have been
investigated. The influence of the weak exciton-phonon interaction of quadratic energy dispersion of Vanier-
Mott's exciton with the nondisperse optical, and both the low-energy optical and acoustic bending-wave type
phonons there has been considered. It was shown that the low-temperature dynamics of an exciton absorption peak
shift in 2H-politype of the lead iodide crystals is related with the concurrent influence of two exciton energy
relaxation mechanisms - on both the bending waves and the lattice optical phonons, but in the case of 4H-politype - the influence of the low-energy optical phonons must be taken into account.
The influence of bending waves on the warm-up behavior of exciton absorption bands in layer crystals had been investigated. The effective mass of the current carriers in the layer semiconductor PbI2 has been computed and used to obtain the values of the exciton-phonon interaction function by pseudopotential method energy spectra calculations. It was shown that the different signs of the warm-up dynamics of an exciton absorptions peak shift and existence of inversion points is related with the concurrent influence of two exciton energy relaxation mechanisms -- on both the bending waves and the lattice phonons.
The effect of a magnetic field on the development of the nonlinear absorption in organic semiconductors and on the formation of the hysteresis loop in the incoming-outgoing light intensity dependence has been investigated. The form function of the exciton absorption is calculated, taking into account three factors: the heavy exciton density, the polarization of the excitation wave and the weak magnetic field. It is shown that an appropriate change of these values allows one to form a hysteresis loop, and thus to form optical bistability (OB) with preset parameters.
The frequencies of internal transitions in impurities in layered semiconductor crystal PbI2 were calculated using the crystal field theory methods. Possibility of configurations mixing is taken into account.
A new program, which allows generation kinematical and transitional matrices of polyatomic molecules in a convenient interactive way, is created. On its base, calculation of frequencies of normal vibrations of phenilalaninum, tirosinum and tryptophanum was carried out.
The electronic structure of the layer compound PbI2 is calculated by use of the pseudopotential method. The norm- conserving nonlocal form factors of pseudopotential were constructed according to Bachelet-Hamann-Schluter scheme. From the pseudowavefunctions the imaginary part of dielectric function were computed in order to obtain the absorption spectra of PbI2 in fundamental region. On these way the integration over kyields space within the irreducible part of Brillouin zone was performed in framework of special points method.
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