Thin films of the (GaxIn1-x)2O3 compound have been prepared on Si substrates by the aerosol deposition method with variation of the Ga concentration (x) from 0 to 0.95. Indium chloride (InCl3) and gallium nitrate (Ga(NO3)3) were used as precursors. The morphology, chemical composition, and crystal structure of the obtained films have been investigated by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and X-ray diffraction (XRD) analysis. The vibration modes have been deduced from Raman spectroscopy measurements to gain additional data concerning the crystallographic structure of phases constituting the deposited films. The optical absorption spectra were analyzed at room temperature in order to determine the bandgap as a function of the x-value in thin films. The photoresponse of films was investigated under the radiation with wavelength from the ultraviolet (UV), visible, and infrared (IR) spectral intervals. The performed investigations demonstrated the polycrystalline nature of films, consisting of high quality nanocrystals, ensuring a gradual increasing of the bandgap from 3.50 eV to 4.85 eV with increasing the x-value from 0 to 0.95, and a predominant photoresponse in the UV spectral range.
ZnMgO thin films were prepared on Si substrates by aerosol deposition method using zinc acetate and magnesium acetate as precursors. The obtained films were investigated by scanning electron microscopy (SEM), energy dispersive xray (EDX) and X-Ray Diffraction (XRD) analysis. SEM and EDX investigations showed that the produced thin films are homogeneous from the point of view of morphology and composition. The investigation of photosensitivity demonstrated that the heterostructures of ZnMgO thin films deposited on Si substrates are sensitive in a wide spectral range from ultraviolet (UV) to infrared (IR) radiation, with a highest sensitivity in the UV region.
We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy (HVPE). The formation of MPS during anodization is caused by the spatial modulation of the electrical conductivity throughout the surface and the volume of the HVPE-grown GaN substrate, which occurs according to a previously proposed model involving generation of pits and their overgrowth. We found that the topology of the porous sheets constituting the MPS is different in the vicinity of N-face and Ga-face of the bulk wafer, it being of conical shape near the N-face and of hemispherical shape near the Ga-face. The composition of electrolytes, their concentration as well as the anodization potential applied during electrochemical etching are among technological parameters optimized for designing MPS suitable for Bragg reflector applications. It is shown also that regions with various porosities can be produced in depth of the sample by changing the anodization potential during the electrochemical etching.
We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro- and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.
In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with gallium nitrate and sodium hydroxide as precursors. Ga2O3 nanowires are produced with increasing the duration of the hydrothermal process up to 24 hours. The production of β-phase Ga2O3 has been confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. According to XRD, Raman and FTIR spectra, wurtzite type GaN nanocrystals with an average size of 28.6 nm are obtained by nitridation of Ga2O3 nanoparticles. Doping of Ga2O3 nanomaterial with Eu3+ ions in the hydrothermal process is demonstrated, and the emission spectra of this Eu-doped nanomaterial are compared with those of Eu-doped nanoparticles prepared previously by solid state reactions.
In this communication, we present results of investigations of the influence of technological conditions upon the properties of GaP nanoparticles produced by using a new precursor as a source of Ga atoms. The obtained nanoparticles were investigated by means of XRD, EDAX, and ТЕМ as well as by means of Raman light scattering and photoluminescence spectroscopy. The sizes of nanoparticles obtained with gallium acetylacetonate as a source of gallium are in the range of 10-40 nm according to estimations from TEM analysis. These values correlate with the position of the short-wavelength emission maximum in the photoluminescence spectra. A method of electrophoretic deposition of GaP nanoparticles from colloidal organosol solutions was elaborated. Raman spectra and XRD patterns, as well as optical transmission spectra have been measured for layers of GaP nanoparticles produced by this method.
ZnO-based red phosphors were prepared by different methods. One phosphor was grown from a Na2B4O7 melt, and another one was prepared from a ZnO:Eu2O3 powder via electron beam treatment. The e-beam processing is found to result in the formation of a high quality layer on the surface of ZnO:Eu2O3 powder. The analysis of the emission related to the Eu3+ 4f-4f intrashell transitions suggests that the phosphor grown from the Na2B4O7 melt represents a nanocomposite consisting of ZnO and Na2B4O7 nanoparticles, a part of Eu3+ ions being incorporated into ZnO and another part into Na2B4O7 constituent, while in the phosphor prepared from ZnO:Eu2O3 powder Eu3+ ions are selectively incorporated into the Zn sublattice of the ZnO host.
High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor concentration, and shifted the low temperature photoluminescence peaks toward higher energies. Room temperature Raman spectra were also studied. The Raman shift of the GaAs-like longitudinal optical phonon band increased with the Dy content in the growth melt. The results were explained by the effect of gettering of unintentional donor impurities in the melt by Dy, as well as by the effect of strain modification in the layers due to the possible incorporation of Dy.
Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range of possible practical applications of well-known semiconducting materials. The bright visible photoluminescence (PL), in particular, of porous silicon has made this material very promising in the technology of light-emitting devices. The visible PL of nanosized silicon particles is supposed to be connected with a quantum size effect which transforms the indirect gap material into a direct gap one with a simultaneous strong increase of EG. This type of band gap engineering approach may be useful when applied to indirect gap semiconductors, other than Si. Porous GaP is such an example; it was fabricated recently and has exhibited intense green PL and a broadened LO phonon Raman peak. In this communication we present detailed experimental results on Raman scattering (RS) spectra of porous GaP layers obtained by electrochemical anodization of (100) and (111) substrates in hydrofluoric acid solution at different current densities.
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