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This paper contains simulation results with the Siemens EDA Calibre tool and demonstrates theoretical proof that alternative mask materials bring significant gain when compared to the tantalum-based mask absorber. Firstly, we optimized the source and aerial image intensity threshold on a set of predefined clips (with SMO techniques). Secondly, we applied ILT techniques to correct for the full chip mask based on a horizontal layout of a metal logic layer on imec’s roadmap. We then compare the tantalum-based mask with the alternative masks using imaging criteria, such as DoF (depth of focus), NILS (Normalized Image log slope), EPE (edge placement error), pattern shifts through focus, process variation band, source telecentricity errors, and MEEF (mask error enhancement factor) on a variety of features in the metal logic clip to maximize the overall process window.
Novel reticle absorber materials are required for high-NA EUV lithography. TNO and ASML developed an assessment for the compatibility of novel high-NA reticle absorber materials with conditions that mimic the EUV scanner environment[1]. Four candidate reticle absorber materials were evaluated, TaCo, RuTa, PtMo and Pt2Mo alloys, in a joint research program. For the compatibility tests, dedicated samples with silicon wafer substrates were fabricated. The silicon wafers were coated with a Mo-Si multilayer coating, followed by a Ru capping layer and finally the absorber material.
Chemical outgassing tests, in presence of hydrogen radicals, did not show chemical outgassing for the TaCo and PtMo alloys. RuTa and Pt2Mo alloys were not tested, based upon their elemental composition chemical outgassing is not expected. Next, all four materials were exposed in a hydrogen plasma resistance test equivalent to an EUV exposure of at least 250 thousand wafers** in the EUV scanner. No plasma-induced defects, like blistering or delamination, were found that were related to the intrinsic absorber properties.
The RuTa and PtMo alloys were selected for EUV exposure in the EBL2 facility at TNO. Both materials were exposed to an 9.6 kJ/mm2 EUV peak dose at an EUV peak intensity of 450 mW/mm2 in a hydrogen environment. This EBL2 EUV exposure of 6 hours represents about 1-2 months of EUV dose (at least 150 thousand wafers) in a NXE or EXE scanner with a 300 W source. Both materials showed good performance during EUV exposure. Relevant surface defects and chemical outgassing were not observed. The few observed blisters in the low EUV intensity areas are likely provoked by particle contamination or coating defects.
All four absorber materials, TaCo, RuTa, PtMo and Pt2Mo alloys performed well in the compatibility tests that were executed. Not all compatibility tests could be performed on each absorber material within the scope of our research program. Further testing would be needed to complete the compatibility assessment, including an EUV exposure on a patterned reticle.
Using rigorous lithographic simulations, we screen potential single element absorber materials for their optical properties and their optimal thickness for minimum best focus variation through pitch at wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5 specific logic clips.
In order to validate the rigorous simulation predictions and to test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements Nickel and Cobalt for an experimental evaluation on wafer substrates. In this work, we present the film characterization as well as first patterning tests of these single element candidate absorber materials.
In this study, we have proven by simulations and experiments that alternative mask technologies can lower mask 3D effects and therefore have the potential to improve the imaging of critical EUV layers.
We have performed an experimental imaging study of a prototype etched ML mask, which has recently become available. This prototype alternative mask has only half the ML mirror thickness (20 Mo/Si pairs) and contains no absorber material at all. Instead, the ML mirror is etched away to the substrate at the location of the dark features. For this etched ML mask, we have compared the imaging performance for mask 3D related effects to that of a standard EUV mask, using wafer exposures at 0.33 NA. Experimental data are compared to the simulated predictions and the benefits and drawbacks of such an alternative mask are shown. Besides the imaging performance, we will also discuss the manufacturability challenges related to the etched ML mask technology.
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