We have developed high energy and high spatial resolution two-dimensional (2D) solid-state imaging pixel
detectors and their custom integrated circuits (ICs). Solid-state pixel detectors and their readout ICs are now
regarded to be an integral part of position-sensitive semiconductor detectors such as Si, CdTe and CdZnTe for x-ray
and gamma-ray imaging. These detectors have a 2D structure. We have also developed one-dimensional (1D)
detectors, which are mostly used for scanning type imaging. The new 2D pixel detectors we have developed can be
used for both scanning and staring mode imaging applications. Because the requirements of various detector
applications tend to be diverse, a custom IC is typically designed for a specific detector array. This often lengthens
the time and raises the cost of system development. To help close the readout technology gap and facilitate advances
in this field, we have been formulating and implementing strategies for instrumenting different detectors of a given
application category with highly versatile ICs that meet a range of requirements. The solid-state pixel detectors that
have been developed within this effort are presented below.
The RENA-3 (R
Readout E eadout Electronics for N lectronics Nuclear A uclear Applications) is a multi-channel mixed-signal integrated circuit (IC)
developed for the readout of position-sensitive solid-state detectors with excellent energy resolution. We will present
results of experiments characterizing its performance as used with a variety of spectroscopy-grade detectors currently
available in the industry, notably CZT pixel arrays as well as other detector configurations. The merits of specific
RENA-3 design features vis-à-vis different detector applications will also be discussed.
We present the design and initial performance characterization of the XENA-2 readout IC for solid-state x-ray detector arrays. XENA-2 consists of 32 readout channels, each with charge-sensitive input amplifier, adjustable two-stage gain amplifier and five comparators with 16-bit pulse counters. Readout of the counters, over a 16-bit data bus, takes approximately 20 μs. Compared to the XENA chip, its predecessor, this new IC's main improvement is significantly reduced noise, which allows for lower comparator thresholds and increased count rates.
We have developed high energy and high spatial resolution 1D and 2D solid state imaging detectors and their
custom integrated circuits (ICs). Readout ICs are now regarded to be an integral part of position-sensitive
semiconductor detectors, especially for Si and CdZnTe for x-ray and gamma-ray imaging. These detectors have a
1D or 2D structure. The 1D structure types are mostly used for scanning purposes with some staring type imaging
while 2D pixel detectors can be used for both scanning and staring mode imaging applications. Because the
requirements of various detector applications tend to be diverse, a custom IC is typically designed for a specific
detector array. This often lengthens the time and raises the cost of system development. To help close the readout
technology gap and facilitate advances in this field, we have been formulating and implementing strategies for
instrumenting different detectors of a given application category with highly versatile ICs that meet a range of
requirements. The solid-state detectors and their ICs that have been developed within this effort are presented.
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