Molybdenum disulfide (MoS2) ultrathin films have been deposited onto Si substrates with different deposition parameters by DC-magnetron sputtering (DCMS) using of external magnetic field (MF) to contribute to the improvement of the promising device's characteristics for nano, optoelectronics, plasmonic, and spintronics. The film properties and morphology structure were compared in the case of the MF presence and its absence, varying the pole of the magnet, deposition time, the slope of the substrate holder, and the magnetic induction. The influence of MF on the MoS2 thin films parameters such as grain size, surface roughness, bandgap energy, was studied by using atomic force microscopy (AFM) and spectrophotometry.
Molybdenum disulfide (MoS2) thin films were prepared by magnetron sputtering MoS2 (99.9% purity) target at the different substrates (such as sapphire and silicon) at the various argon pressure and power discharge. Deposition parameters influence on the structure and optical properties of the MoS2 thin films were analyzed by atomic force microscope (AFM) and spectrophotometer that was used for detecting reflectance spectra and then to calculate thin films bandgap. MoS2 thin films on sapphire substrates have smoother surface roughness and higher bandgap energy than MoS2 thin films on Si substrate. MoS2 thin films bandgap energy increasing and surface roughness decreasing was caused by power discharge decreasing.
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