The necessity of using a vector network analyzer (VNA) for RF/MW device characterization is shown. Field transistor equivalent circuit has been analyzed for dynamic parameters research. Authors have got analytical expressions and provided method for high-frequency field transistors parameters determination based on s-parameters measurements using a VNA. The recommendations for test transistors' optimal parameters are presented. The device under test in this paper is GaAs HEMT double gate transistor with w=150 um. The research of transistors parameters was done in operating point: Vds=1.4 V, Vgs=-0.6 V. This paper contains method for HEMT transistor capacitance (Cin, Cgd, Cgs) determination using time-domain reflectometry (TDR). Authors have got theoretical and experimental values for fMAX that show good coincidence.
Power consumption regularities of the most perspective quasi-adiabatic base logic gates are investigated by method of computer modeling. The effect of abnormal high power consumption in a range of low frequencies is discovered and explained; the method of its neutralization is offered. It is revealed, that in a range of high frequencies energy dissipation in gates decreases at reduction of clock frequency more poorly, than under the law 1 / f . The mechanism of this anomaly is found out. The established laws a power consumption of the base logic gates allow to choose the compromise between power consumption and speed, optimize power characteristics of base gates. It's also allowed to predict their improvement at quality improvement of technology.
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