Some problems arisen from the fabrication of the nano-scale transistors are discussed: modification of the silicon-on-insulator (SOI) under (a) thinning procedure (multiplied oxidation), (b) structuring of the silicon nanolayers. Two types of SOI field effect transistors (FETs) were realized: in-plane-gate FET (IPGFET) with 40 nm minimum channel size and multi-channel top-gate FET on silicon on-insulator. The multi-channel 3D-gate FET fabricated on the uniform doped silicon layers are found to be the most advantageous variant of design.
We investigated the gamma radiation tolerance of a 0.5 μm SOI technology on Dele-Cut material. The radiation response was characterized by threshold-voltage shift of the front-gate and back-gate transistors. Results are compared with the radiation response of SOI MOSFETs on Unibond and SIMOX materials. Negligible degradation of subthreshold swing of back-gate n- and p-channel MOSFETs was observed, indicating that the primary effect of radiation is the introduction of charge in the buried oxide. The charge accumulation in the buried oxide was compared with MOSFETs fabricated in different SOI wafers. Buried oxide of Dele-Cut MOSFETs demonstrates the more pronounce γ-radiation tolerance in comparison with Unibond and SIMOX MOSFETs.
The current state of the art and application of technology of molecular beam epitaxy, direct bonding of semiconductor wafers, electron beam lithography and probe nanolithography are reviewed on the base of results of research work carried out at the Institute of Semiconductor Physics (Novosibirsk).
Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient at the stage of defect removal in implanted material and high temperature annealing SOI structures is reported. The results are compared to these for crystals annealed at argon atmosphere of ambient pressure. Formation of the new phase crystallites was found in SOI structures annealed at high temperature in conditions of high pressure. Small insulations were also observed in hydrogen implanted silicon, which can be patterns of the new phase. Two reasons can cause phase transformation in the top silicon layer of as-bonded SOI structures: high hydrogen concentration and high local strain.
Conference Committee Involvement (1)
The International Conference on Micro- and Nano-Electronics 2018
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