Prof. Volodymyr K. Malyutenko Profile

Prof. Volodymyr K. Malyutenko

Head of Department at VE Lashkaryov Institute of Semiconductor Physics

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 14 March 2016 Paper

Si photonics expands to mid-wave and long-wave infrared: the fundamentals and applications

V. Malyutenko

Proceedings Volume 9752, 97521D (2016) https://doi.org/10.1117/12.2208125

KEYWORDS: Luminescence, Thermography, Infrared imaging, Absorption

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Proceedings Article | 8 March 2016 Paper

Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?

V. Malyutenko, O. Malyutenko

Proceedings Volume 9768, 97681N (2016) https://doi.org/10.1117/12.2211505

KEYWORDS: Electrons, Electroluminescence, Quantum wells, Diodes, Internal quantum efficiency, Optoelectronic devices, Blue light emitting diodes

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Proceedings Article | 27 February 2014 Paper

Electrical efficiency and droop in MQW LEDs

V. Malyutenko

Proceedings Volume 9003, 90031T (2014) https://doi.org/10.1117/12.2041567

KEYWORDS: Light emitting diodes, Electrical efficiency, Internal quantum efficiency, Electroluminescence, Resistance, Quantum efficiency, External quantum efficiency, Electrons, Blue light emitting diodes, Indium gallium nitride

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Proceedings Article | 19 February 2014 Paper

Light up conversion versus light down conversion in radiative cooling of semiconductors

V. Malyutenko

Proceedings Volume 9000, 90000P (2014) https://doi.org/10.1117/12.2038476

KEYWORDS: Photons, Semiconductors, Absorption, Luminescence, Phonons, Silicon, Solids, Light emitting diodes, Semiconductor lasers, Infrared radiation

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Proceedings Article | 11 May 2012 Paper

Large-scale silicon photonic infrared scene projector by down conversion

V. Malyutenko

Proceedings Volume 8356, 835604 (2012) https://doi.org/10.1117/12.918939

KEYWORDS: Projection systems, Thermography, Silicon, Infrared radiation, Absorption, Long wavelength infrared, Mid-IR, Scene simulation, Semiconductors, Infrared imaging

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Proceedings Article | 17 February 2010 Paper

Silicon radiative cooler and optical amplifier by light down conversion

V. Malyutenko, V. Bogatyrenko, O. Malyutenko

Proceedings Volume 7606, 760617 (2010) https://doi.org/10.1117/12.840912

KEYWORDS: Silicon, Photons, Semiconductors, External quantum efficiency, Luminescence, Optical amplifiers, Absorption, Semiconducting wafers, Electrons, Thermal imaging cameras

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Proceedings Article | 12 February 2010 Paper

Effect of current crowding on the ideality factor in MQW InGaN/GaN LEDs on sapphire substrates

V. Malyutenko, S. Bolgov

Proceedings Volume 7617, 76171K (2010) https://doi.org/10.1117/12.840894

KEYWORDS: Light emitting diodes, Resistance, Sapphire, Blue light emitting diodes, External quantum efficiency, Diffusion, Dielectrics, Solid state lighting, Quantum efficiency, Internal quantum efficiency

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Proceedings Article | 12 May 2009 Paper

Single-layer SiGe infrared wide-band microemitter arrays by MEMS technology

V. Malyutenko, O. Malyutenko, V. Leonov, C. Van Hoof

Proceedings Volume 7318, 73181F (2009) https://doi.org/10.1117/12.818482

KEYWORDS: Thermography, Long wavelength infrared, Tellurium, Infrared radiation, Mid-IR, Infrared imaging, Tantalum, Resistors, Silicon, Microelectromechanical systems

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Proceedings Article | 3 September 2008 Paper

Two-band IR sensing technology with improved temperature and spatial resolution: visualizing light and heat in LEDs

Volodymyr Malyutenko, Oleg Malyutenko

Proceedings Volume 7055, 70550I (2008) https://doi.org/10.1117/12.794850

KEYWORDS: Light emitting diodes, Thermography, Infrared imaging, Lamps, Infrared cameras, Cameras, Mid-IR, Spatial resolution, Charge-coupled devices, Diffusion

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Proceedings Article | 30 April 2007 Paper

Is there life after thermal emitters?

V. Malyutenko

Proceedings Volume 6544, 65440H (2007) https://doi.org/10.1117/12.721571

KEYWORDS: Light emitting diodes, Thermography, Mid-IR, Infrared imaging, Transparency, Tellurium, Semiconducting wafers, Scene simulation, Resistors, Semiconductor lasers

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Proceedings Article | 12 October 2006 Paper

Light down-conversion process in Si with >100% external efficiency

V. Malyutenko, V. Bogatyrenko

Proceedings Volume 6368, 636805 (2006) https://doi.org/10.1117/12.686672

KEYWORDS: Absorption, Semiconducting wafers, Semiconductors, Silicon, Modulation, Thermography, Signal processing, Energy conversion efficiency, Thermal imaging cameras, Infrared radiation

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Proceedings Article | 12 October 2006 Paper

Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices

V. Malyutenko, A. Zinovchuk

Proceedings Volume 6368, 63680D (2006) https://doi.org/10.1117/12.686830

KEYWORDS: Light emitting diodes, Thermography, Mid-IR, Scene simulation, Resistance, Device simulation, Infrared cameras, Photonic devices, Infrared imaging

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Proceedings Article | 12 October 2006 Paper

Optically pumped Si emitting device for midinfrared band

V. Malyutenko, S. Chyrchyk

Proceedings Volume 6368, 636803 (2006) https://doi.org/10.1117/12.685998

KEYWORDS: Silicon, Mid-IR, Transparency, Absorption, Semiconducting wafers, Thermography, Modulation, Temperature metrology, Light emitting diodes, Wafer-level optics

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Proceedings Article | 16 May 2006 Paper

Cold background infrared scene simulation device

V. Malyutenko, V. Bogatyrenko, O. Yu. Malyutenko, S. Chyrchyk

Proceedings Volume 6208, 62080P (2006) https://doi.org/10.1117/12.666557

KEYWORDS: Thermography, Silicon, Germanium, Mid-IR, Long wavelength infrared, Transparency, Coating, Aluminum, Cameras, Absorption

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Proceedings Article | 20 April 2006 Paper

Large area Si light emitting device for the mid-wave and long-wave infrared bands

V. Malyutenko, S. Bolgov, O. Yu. Malyutenko

Proceedings Volume 6183, 61831M (2006) https://doi.org/10.1117/12.662748

KEYWORDS: Silicon, Mid-IR, Long wavelength infrared, Modulation, Infrared radiation, Absorption, Thermography, Black bodies, Transparency, Diodes

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Proceedings Article | 29 September 2005 Paper

Si infrared pixelless photonic emitter

V. Malyutenko, V. Bogatyrenko, O. Malyutenko, S. Chyrchyk

Proceedings Volume 5957, 59570D (2005) https://doi.org/10.1117/12.622104

KEYWORDS: Silicon, Mid-IR, Absorption, Transparency, Long wavelength infrared, Thermography, Coating, Infrared radiation, Semiconducting wafers, Black bodies

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Proceedings Article | 14 September 2005 Paper

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs

V. Malyutenko, O. Malyutenko, A. Zinovchuk, A. Zakheim, D. Zakheim, I. Smirnova, S. Gurevich

Proceedings Volume 5941, 59411K (2005) https://doi.org/10.1117/12.618297

KEYWORDS: Light emitting diodes, Sapphire, Temperature metrology, Blue light emitting diodes, Thermography, Infrared imaging, Spatial resolution, Silicon, Infrared microscopy, Resistance

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Proceedings Article | 4 August 2004 Paper

Synthetic IR signature control using emissivity enhancement techniques

Volodymyr Malyutenko, Oleg Malyutenko, Vyacheslav Bogatyrenko, Sergiy Chyrchyk, James Kircher, Robert Murrer, Donald Snyder

Proceedings Volume 5408, (2004) https://doi.org/10.1117/12.537758

KEYWORDS: Thermography, Visible radiation, Infrared imaging, Absorption, Silicon, Semiconductors, Germanium, Infrared radiation, Projection systems, Infrared signatures

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Proceedings Article | 8 December 2003 Paper

Polycrystalline SiGe technology for uncooled microbolometer arrays

Vladimir Leonov, Claus Goessens, Chris Van Hoof, Bob Grietens, Natalia Perova, Volodymyr Malyutenko

Proceedings Volume 5209, (2003) https://doi.org/10.1117/12.505836

KEYWORDS: Infrared radiation, Microbolometers, Thermography, Infrared imaging, Bolometers, Resistance, Staring arrays, Infrared cameras, Sensors, Black bodies

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Proceedings Article | 12 September 2003 Paper

Semiconductor screen dynamic visible-to-infrared scene converter

Volodymyr Malyutenko, V. Bogatyrenko, Oleg Malyutenko, Donald Snyder, August Huber, James Norman

Proceedings Volume 5092, (2003) https://doi.org/10.1117/12.512654

KEYWORDS: Thermography, Semiconductors, Infrared imaging, Absorption, Germanium, Infrared radiation, Visible radiation, Projection systems, Infrared cameras, Electrons

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Proceedings Article | 12 September 2003 Paper

Three approaches in infrared imaging of electronic devices

Volodymyr Malyutenko

Proceedings Volume 5092, (2003) https://doi.org/10.1117/12.516466

KEYWORDS: Thermography, Infrared imaging, Electronic components, Luminescence, Light emitting diodes, Semiconductors, Infrared cameras, Optoelectronic devices, Cameras, Visualization

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Proceedings Article | 18 December 2002 Paper

Semiconductor screen dynamic visible-to-infrared scene converter

Volodymyr Malyutenko, V. Bogatyrenko, Oleg Malyutenko, Donald Snyder, August Huber, James Norman

Proceedings Volume 4818, (2002) https://doi.org/10.1117/12.458090

KEYWORDS: Thermography, Visible radiation, Absorption, Semiconductors, Infrared radiation, Infrared imaging, Germanium, Projection systems, Infrared cameras, Electrons

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Proceedings Article | 16 April 2002 Paper

Mapping of current and heat flows in IR light-emitting devices and lasers

Volodymyr Malyutenko

Proceedings Volume 4648, (2002) https://doi.org/10.1117/12.462658

KEYWORDS: Light emitting diodes, Luminescence, Infrared imaging, Spatial resolution, Infrared radiation, Indium arsenide, Thermography, Semiconductor lasers, Indium gallium arsenide, Infrared signatures

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Proceedings Article | 17 May 2001 Paper

Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-um range

Boris Matveev, Meyrhan Aydaraliev, Nonna Zotova, Sergey Karandashev, Maxim Remennyi, Nikolai Stus', Georgii Talalakin, Volodymyr Malyutenko, Oleg Malyutenko

Proceedings Volume 4285, (2001) https://doi.org/10.1117/12.426876

KEYWORDS: Diodes, Light emitting diodes, Electroluminescence, Indium arsenide, Indium arsenide antimonide phosphide, Luminescence, Temperature metrology, Resistance, Liquid phase epitaxy, Absorption

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Proceedings Article | 22 February 2001 Paper

4-um negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C

M. Aidaraliev, Nonna Zotova, Sergey Karandashev, Boris Matveev, Maxim Remennyi, Nikolai Stus', Georgii Talalakin, Volodymyr Malyutenko, Oleg Malyutenko

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417777

KEYWORDS: Light emitting diodes, Diodes, Electroluminescence, Luminescence, Temperature metrology, Liquid phase epitaxy, Indium arsenide, Infrared imaging, Absorption, Photodiodes

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Proceedings Article | 19 August 1994 Paper

Characterization of impurity concentration in semiconductors based on the thermal emission measurements

Volodymyr Malyutenko, V. Chernyakhovsky, Tadeusz Piotrowski

Proceedings Volume 2211, (1994) https://doi.org/10.1117/12.183062

KEYWORDS: Semiconducting wafers, Oxygen, Absorption, Silicon, Temperature metrology, Black bodies, Semiconductors, Microscopes, Sensors, Crystals

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Determination of the interstitial oxygen concentration in silicon is one. of important elements of its characterization. In the room temperature interstitial oxygen has an absorption level for the —1 wavelength X=9.05 im Cv = 1106 cm ). This level is very well seen because defectless silicon has low absorption in this range. Thus, mainly used method for interstitial oxygen concentration determination is based on dependence between the absorption coefficient of the oxygen peak as measured and interstitial oxygen concentration N [1, 2, 3]. In measurements of N some difficulties associated with absorption on phonons appear. At low silicon resistivities additional difficulties connected with the absorption on free carriers appear [4, 5] and the measurements at very low temperatures are necessary [6, 7]. For the absorption measurements an external source of infrared radiation (IR) of high stability (e.g. CO2 - laser) and thick samples with very well polished both surfaces [3] are required, which is often impossible in the case of commercial wafers. In this work a new optical method enabling determination of the interstitial oxygen concentration N, as well as its spatial distribution in silicon wafers is described. This method is based on the thermal radiation (TR)[4] measurement of the investigated material in the range of the interstitial oxygen absorption [81. According to the Kirchhoff's law the TR emission depends on the absorption properties of the material which enables in certain conditions to estimate the oxygen concentration. For this method an external source of IR is not necessary, and measurements can be carried out on wafers with metallized or rough back surfaces. Creating conditions enabling the measurement of TR radiation of the wafer is realized by heating or cooling a screen placed behind the wafer. With this method one can measure temperature dependence of interstitial oxygen concentration. The measurements can be carried outwith the use of the spectrophotometer, a scanning IR microscope or a thermovision camera with suitable adjusted spectral range.

Proceedings Article | 1 January 1994 Paper

Thermal emission versus luminescence for IR emitting diodes

V. Malyutenko

Proceedings Volume 2250, 22506F (1994) https://doi.org/10.1117/12.2303248

KEYWORDS: Luminescence, Thermography, Diodes, Semiconductors, Infrared technology, Quantum efficiency, Light emitting diodes, Optical signal processing, Infrared radiation, Terahertz technology

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Showing 5 of 27 publications

Conference Committee Involvement (1)

Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX

13 April 2004 | Orlando, Florida, United States

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