Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.
Integrating quantum optics with silicon would substantially benefit from the extensive advancements made in manufacturing classical electronic and optical components. We present the first all-silicon quantum light source by embedding a single silicon-based defect within a silicon nanophotonic cavity. We have observed a 30-fold enhancement of luminescence, achieving near-unity atom-cavity coupling efficiency and an 8-fold acceleration of emission from the all-silicon quantum emissive center. These findings pave the way for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces.
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