Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.
Integrating quantum optics with silicon would substantially benefit from the extensive advancements made in manufacturing classical electronic and optical components. We present the first all-silicon quantum light source by embedding a single silicon-based defect within a silicon nanophotonic cavity. We have observed a 30-fold enhancement of luminescence, achieving near-unity atom-cavity coupling efficiency and an 8-fold acceleration of emission from the all-silicon quantum emissive center. These findings pave the way for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces.
Precise positioning of single quantum dots (QDs) in photonics crystal (PhC) cavities with nanometer-scale accuracy offers great promise for on-chip integrated quantum photonic circuit. In such coupled QD-cavity system, the decoherence fundamentally affects the coherent control for quantum communication and information processing. However, accessing to the strong-coupling regime and the impact of pure dephasing in such system have been rarely reported yet. Here, relying on our unique site-controlled pyramidal InGaAs/GaAs QDs – high-Q-PhC cavities platform, we investigate the cavity quantum electrodynamics towards strong-coupling regime mediated by pure dephasing. We demonstrate the anti-crossing and mutual linewidth narrowing of the single excitonic emission strongly coupled to cavity mode near resonance. We further present the signatures of Rabi-like oscillation and quantum beating between upper and lower branch of polariton.
We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the active layer is tuned by varying the thickness of an InAlN underlayer. When the defect density is increased, apart from Shockley–Read–Hall (SRH) and standard Auger recombination, introducing an extra defect-assisted Auger process is required to reconcile the discrepancy observed between the usual ABC model and experimental data. We derive a linear dependence between the SRH coefficient and the bimolecular defect-assisted Auger coefficient, which suggests that the generated defects can act as scattering centers responsible for indirect Auger processes. Our results further suggest that the defect-assisted Auger recombination is expected to be all the more critical in green to red III-nitride light-emitting diodes due to their reduced radiative rate.
The success story of blue light-emitting diodes over the past decade is underpinned by the high internal quantum efficiency (IQE) of the InGaN/GaN quantum wells (QWs) within the active region. Yet this extraordinary IQE can only be achieved by adding an indium-containing layer before the QWs—the “underlayer” (UL). In this work, we evidence that any indium-containing III-nitride layer acts to incorporate surface defects; the UL hence acts as a getter for surface defects to avoid their incorporation into the QWs as IQE-reducing point defects (PDs). We directly observe the reduction in PD-density caused by increasing the UL thickness.
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