We demonstrate that near-infrared organic photodetectors (OPDs) based on vanadyl phthalocyanine (VOPc) and C60 have a higher detectivity and longer wavelength response (up to 935 nm) when fabricated by depositing VOPc on a p-sexiphenyl (p-6P) modified indium-tin-oxide (ITO) substrate. The film morphologies were imaged by atomic force microscopy (AFM) in tapping mode. X-ray diffraction patterns were obtained from a D8 Discover thin-film diffractometer. The OPDs deposited on a bare ITO substrate have larger dark and light current densities at -1 V because deposited VOPc films on bare ITO substrates have more defects according to the morphologies. VOPc film deposited on p-6P has a higher density of dimers than the bare ITO, leading to the increase of long-wavelength peak intensities in the EQE diagram.
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