Ms. Wen-Chuan Wang Profile

Wen-Chuan Wang

at Taiwan Semiconductor Manufacturing Company, Ltd

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Publications (4)

Proceedings Article | 19 March 2015 Paper

An instruction-based high-throughput lossless decompression algorithm for e-beam direct-write system

Cheng-Chi Wu, Jensen Yang, Wen-Chuan Wang, Shy-Jay Lin

Proceedings Volume 9423, 94231P (2015) https://doi.org/10.1117/12.2085278

KEYWORDS: Image compression, Chromium, Data storage, Associative arrays, Algorithm development, Optical fibers, Computer programming, Direct write lithography, Data analysis, Manufacturing

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Proceedings Article | 27 March 2014 Paper

Characterization of chemically amplified resists for electron beam lithography

Tomoharu Yamazaki, Hiroki Yamamoto, Takahiro Kozawa, Wen-Chuan Wang

Proceedings Volume 9051, 90511J (2014) https://doi.org/10.1117/12.2046240

KEYWORDS: Line edge roughness, Electron beams, Chemically amplified resists, Electron beam lithography, Diffusion, Chemical reactions, Image acquisition, Polymers, Photoresist processing, Lithography

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Proceedings Article | 26 March 2013 Paper

Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

Thomas Gubiotti, Jeff Fuge Sun, Regina Freed, Francoise Kidwingira, Jason Yang, Chris Bevis, Allen Carroll, Alan Brodie, William Tong, Shy-Jay Lin, Wen-Chuan Wang, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 8680, 86800H (2013) https://doi.org/10.1117/12.2010722

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Coating, Logic, Electron beams, Polymethylmethacrylate, Printing, Reflectivity, Silica

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Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a functional DPG chip and will evaluate the current chip performance on the REBL system. Print results for line/space and device test patterns at the 100nm node will be presented.

Proceedings Article | 26 March 2013 Paper

Influence of data volume and EPC on process window in massively parallel e-beam direct write

Shy-Jay Lin, Pei-Yi Liu, Cheng-Hung Chen, Wen-Chuan Wang, Jaw-Jung Shin , Burn Jeng Lin, Mark McCord, Sameet Shriyan

Proceedings Volume 8680, 86801C (2013) https://doi.org/10.1117/12.2010865

KEYWORDS: Electroluminescence, Raster graphics, Scattering, Monte Carlo methods, Silica, Diffusion, Laser scattering, Quantization, Modulation transfer functions, Backscatter

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