The current industry plan is for EUV Lithography (EUVL) to enter High Volume Manufacturing (HVM) in the 2019/20
timeframe for the 1X nm half-pitch (HP) node (logic and memory). Reticle quality and reticle defects continue to be a top
industry risk. The primary reticle defect quality requirement continues to be “no reticle defects causing 10% or larger CD
errors on wafer (CDE)”. In 2013, KLA-Tencor reported on inspection of EUV reticles using a 193nm wavelength
inspection system1. The report included both die-to-database (db) and die-to-die (dd) inspection modes. Results showed
the capability to detect a wide variety of programmed and native reticle defects judged to be critical. We have developed
extensions to the 193nm wavelength (193) inspection system for the typical 2019/20 HVM EUV reticle defect
requirements. These improvements include innovations in: defect enhancement methods, database modeling, defect
detection, and throughput. In this paper, we report on the latest data and results of this work, focusing on EUV reticle dieto-
database inspection. Inspection results are shown using typical next generation EUV programmed defect test reticles
and typical full field product-like EUV reticles, all from industry sources. Results show significant defect detection
improvements versus the prior generation inspection system. We also report the test results of a high throughput die-todatabase
inspection mode that could be used for the typical mask shop outgoing inspection of EUV reticles where particles
are the primary defect to be detected and there is no pellicle (or the pellicle transmits 193nm wavelength2).
Advanced Inverse Lithography Technology (ILT) can result in mask post-OPC databases with very small address units, all-angle figures, and very high vertex counts. This creates mask inspection issues for existing mask inspection database rendering. These issues include: large data volumes, low transfer rate, long data preparation times, slow inspection throughput, and marginal rendering accuracy leading to high false detections. This paper demonstrates the application of a new rendering method including a new OASIS-like mask inspection format, new high-speed rendering algorithms, and related hardware to meet the inspection challenges posed by Advanced ILT masks.
The use of EUV photomasks in a semiconductor manufacturing environment requires their periodic inspection to ensure they are continually free of defects that could impact device yield. Defects typically occur from fall-on particles or from surface degradation such as “haze”. The proposed use of a polycrystalline-based EUV pellicle to prevent fall-on particles would preclude periodic through-pellicle mask defect inspection using e-beam, as well as, DUV inspection tools (the pellicle is opaque at DUV wavelengths). Thus, to use these types of defect inspection tools would require removal of the EUV pellicle before inspection. After inspection, the pellicle would need to be re-attached and the mask re-qualified using a test wafer, thus causing expense and delays. While EUV-wavelength inspection tools could inspect through such a pellicle precluding the need to remove the pellicle, these tools are not likely to be available in the commercial marketplace for many years. An alternate EUV pellicle material has been developed that is semi-transparent to 193nm wavelengths, thus allowing through-pellicle inspection using existing ArF-based, or other 193nm wavelength mask inspection tools. This eliminates the requirement to remove the pellicle for defect inspection and the associated time and expense. In this work, we will conduct an initial evaluation of through-pellicle EUV mask defect inspection using an existing 193nm mask inspection tool. This initial evaluation will include durability of the pellicle to defect inspection, and impact of the pellicle on inspection tool performance.
To prevent catastrophic failures in wafer manufacturing lines from reticle defects, mask manufacturers employ sophisticated reticle inspection systems to examine every shape on every reticle for defects. The predominant inspection systems in use today compare the reticle directly with the design database using high-NA optics (typically 3x higher resolution at the reticle plane than advanced wafer scanners).
High-NA optical inspection with its high signal to noise ratio (SNR) can readily detect small defects before they have lithographic impact, thus ensuring reticle quality. However, when inspecting certain aggressive OPC, high-NA inspection can overload on small OPC defects which do not have lithographic impact and thus, should generally be ignored.
Whereas, inspecting a reticle as imaged in the wafer plane (low-NA in the reticle plane) will generally ignore such small OPC defects; however, the SNR is often too low for certain defect types to provide the needed defect detection sensitivity to ensure reticle quality.
This paper discusses the design and performance of a novel reticle inspection method using high-NA and low-NA dual optical imaging and processing. This method offers the high defect sensitivity of high-NA inspection with the OPC tolerance of low-NA inspection. These two imaging methods are blended together into a seamless inspection mode suitable for aggressive OPC of the 14nm generation and beyond. The test reticles include 14nm logic designs containing aggressive OPC and native defects, as well as a 14 nm test reticle containing relevant programmed defects. Defect lithographic significance is judged using a Zeiss AIMS™ system.
To prevent catastrophic failures during wafer manufacturing, mask manufacturers employ sophisticated
reticle inspection systems to examine every image on every reticle to identify defects. These advanced
systems inspect at resolutions typically 3x higher at the reticle-plane than advanced wafer scanners; thus
enabling them to detect the small defects necessary to ensure reticle quality.
The most thorough inspection is done using a reticle-to-database comparison that ensures the reticle pattern
matches the design pattern. For high defect sensitivity, the database must be carefully modeled to exactly
match the reticle pattern. Further, sub-resolution OPC shapes are often at the limit of the mask
manufacturing process, which adds subtle variations on such shapes across the reticle. These modeling
errors and process variations can cause high numbers of unwanted detections, thereby limiting inspection
system defect detection sensitivity.[1]
OPC designs are expected to become more aggressive for future generations and may stress the
performance of current reticle inspection systems. To systematically assess the capability of various
inspection approaches and identify needed areas for improvement, a new “Nightmare” test reticle has been
designed by IBM. The test reticle contains various sizes and shapes of sub-resolution features that might
appear on reticle generations from today’s 22nm to future 7nm. It also contains programmed defects to
assess defect detection capability of current and future generation inspection systems.
This paper will discuss the design of the “Nightmare” test reticle, and the inspection results of the current
generation reticle inspection methods with emphasis on both inspectability and defect sensitivity. The subresolution
features will be ranked according to importance for advanced OPC design. The reticle will also
be evaluated using wafer print simulation so lithographic impact of features and defects can be measured
and compared against inspection approaches and results.
The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the
2015 – 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL
into HVM – blank and reticle defects are among the top items.
To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection
need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm
wavelength reticle inspection system – the Teron 610 Series (2010). This system has become the industry standard for
22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV
blank and reticle inspection in R and D.
To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection
system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The
advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for
currently available 14nm / 2xhp generation EUV reticles.
As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify
areas for further improvement with the goal to be ready for pilot lines in early 2015.
We report inspection results of early 22-nm logic reticles designed with both conventional and computational
lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane
inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased
sensitivity control (MSC) method are tested.
The evaluation includes defect detection performance using several special test reticles designed with both conventional
and computational lithography methods; the reticles contain a variety of programmed critical defects which are
measured based on wafer print impact. Also included are inspection results from several full-field product reticles
designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can
be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database
inspection mode only.
A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database
and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the
reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with
planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography
using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line
lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to
meet these diverse needs in optical and EUV lithography.
The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a
variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as
advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance
detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing
industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature
sizes
As optical lithography progresses towards 32nm node and beyond, shrinking feature size on photomasks and growing
database size provides new challenges for reticle manufacture and inspection. The new TeraScanXR extends the
inspection capability and sensitivity of the TeraScanHR to meet these challenges. TeraScanXR launches a new function
that can dynamically adjust defect sensitivities based on the image contrast (MEEF) -- applying higher sensitivity to
dense pattern regions, and lower sensitivity to sparse regions which are lithographically less significant. The defect
sensitivity of TeraScanXR for Die-to-Die (DD) and Die-to-Database (DDB) inspection mode is improved by 20-30%,
compared with TeraScanHR. In addition, a new capability is introduced to increase sensitivity specifically to long CD
defects. Without sacrificing the inspection performance, the new TeraScanXR boosts the inspection throughput by 35%-
75% (depending upon the inspection mode) and the dataprep speed by 6X, as well as the capability to process 0.5-1
Terabyte preps for DDB inspection.
KEYWORDS: Prototyping, Inspection, Reticles, Sensors, Detection and tracking algorithms, Imaging systems, Logic, SRAF, Signal to noise ratio, Digital breast tomosynthesis
A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below
logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use
predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used.
Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone,
complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive
model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution
assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the
prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase
mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as
advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration
inspection systems show measurable sensitivity improvement and a reduction in false detections.
KEYWORDS: Inspection, Reticles, Line edge roughness, Signal to noise ratio, Sensors, Detection and tracking algorithms, Spatial frequencies, Modulation transfer functions, Image processing, Defect detection
The new TeraScanXR reticle inspection system extends the capability of the previous TeraScanHR platform to advanced
32nm logic and 40nm Half Pitch (HP) memory technology nodes. The TeraScanXR has been designed to provide a
significant improvement in image quality, defect sensitivity and throughput relative to the HR platform. Defect
sensitivity is increased via a combination of improved Die-to-Die (D:D) and Die-to-Database (D:DB) algorithms, as well
as enhancements to the image auto-focus (IAF). Modifications to system optics and the introduction of a more powerful
image processing computer have enabled a ~2X faster inspection mode. In this paper, we describe the key features of the
TeraScanXR platform and present preliminary data that illustrate the capability of this tool. TeraScanHR tools currently
at customer sites are field-upgradeable to the TeraScanXR configuration.
Results from the recently available TeraScanHR reticle inspection system were published in early 2007. These
results showed excellent inspection capability for 45nm logic and 5xnm half-pitch memory advanced production
reticles, thus meeting the industry need for the mid-2007 start of production. The system has been in production use
since that time. In early 2007, some evidence was shown of capability to inspect reticles for 32nm logic and sub-50nm half-pitch memory, but the results were incomplete due to the limited availability of such reticles. However,
more of these advanced reticles have become available since that time. In this paper, inspection results of these
advanced reticles from various leading-edge reticle manufacturers using the TeraScanHR are shown. These results
indicate that the system has the capability to provide the needed inspection sensitivity for continued development
work to support the industry roadmap.
Results from the recently available TeraScanHR reticle inspection system were published in early 2007. These
results showed excellent inspection capability for 45nm logic and 5xnm half-pitch memory advanced production
reticles, thus meeting the industry need for the mid-2007 start of production. The system has been in production use
since that time. In early 2007, some evidence was shown of capability to inspect reticles for the next nodes, 32nm
logic and sub-50nm half-pitch memory, but the results were incomplete due to the limited availability of such
reticles. However, more of these advanced reticles have become available since that time. Inspection results of
these advanced reticles from various leading edge reticle manufacturers using the TeraScanHR are shown. These
results indicate that the system has the capability to provide the needed inspection sensitivity for continued
development work to support the industry roadmap.
A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for
advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the
comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also
be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG.
Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer,
complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will
include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very
small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these
requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This
new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both
transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan
Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed
defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high
sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm,
and 130nm nodes.
A new die-to-database high-resolution reticle defect inspection system has been developed for the 45nm logic node and
extendable to the 32nm node (also the comparable memory nodes). These nodes will use predominantly 193nm
immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for
the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes
including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, EUV, etc. Finally,
aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and
SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current
generation of inspection systems is inadequate to meet these requirements. The architecture and performance of a new
die-to-database inspection system is described. This new system is designed to inspect the aforementioned reticle types
in die-to-database and die-to-die modes. Recent results from internal testing of the prototype systems are shown. The
results include standard programmed defect test reticles and advanced 45nm and 32nm node reticles from industry
sources. The results show high sensitivity and low false detections being achieved.
Semiconductor product designs are necessarily constrained by both the wafer and mask lithographic capabilities. When mask image sizes approach the exposure wavelength, optical and resist effects distort the printed images. Applying optical proximity correction (OPC) to design features on the mask compensates for diffraction effects. However, aggressive OPC introduces even smaller minimum features, adds notches and bulges, introduces sub-resolution assist features (SRAFs) and generally creates a more challenging mask design with respect to data handling, printing and inspection. Mask defect inspection is a critical part of the mask process, ensuring that the mask pattern matches the intended design. However, the inspection itself imposes constraints on mask patterns that can be inspected with high defect sensitivity but low nuisance defect counts. These additional restrictions are undesirable since they can reduce the effectiveness of the OPC. IBM and KLA-Tencor have developed a test mask methodology to investigate the inspectability limits of the 576 and 516 mask inspection systems. The test mask design contains a variety of rules or features that currently impose inspectability limits on the inspection tools, in a range of sizes. The design also incorporates many features essential for obtaining valid results, such as a user-friendly layout, multiple pattern orientations, and background patterns. The mask was built and inspected in IBM Burlington's mask house. Preliminary inspection results will be presented; they underscore the importance of understanding both the inspection tool and the mask process when restricting mask design rules.
A new DUV die-to-database high-resolution reticle defect inspection platform has been developed. This platform is designed to meet the 90nm through 65nm node 248/193nm lithography reticle qualification requirements of the IC industry. These design nodes typically include: COG layers, EPSM layers, and AltPSM layers, plus aggressive OPC which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and technology of the new inspection platform is described. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as, advanced 90nm through 65nm node reticles from industry sources. Results show high sensitivity and low false detections being achieved.
A new DUV high-resolution reticle defect inspection platform has been developed to meet the sub-90nm node 248/193nm lithography reticle qualification requirements of the IC industry. This advanced lithography process typically includes COG layers, EPSM layers, and AltPSM layers; aggressive OPC is typically used which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and performance of the new reticle defect inspection platform is described. Die-to-die inspection results on standard programmed defect test reticles are presented showing typically 50nm edge placement defect sensitivity, 80nm point defect sensitivity, 5.5% flux defect sensitivity, and 100nm quartz phase defect sensitivity. Low false detection results are also shown on 90nm node and below product reticles. Direct comparisons with UV wavelength inspections show measurable sensitivity improvement and a reduction in false detections. New lithography oriented defect detectors are discussed and data shown.
Reticle pinhole defects below 200nm are problematic from several standpoints. The wafer manufacturer presents a specification to the reticle producer, who in turn charges the inspection tool vendors with the task of detecting pinholes of a given size. The measurement of these pinholes, especially on programmed defect test masks, becomes critical to the success of this flow. Measuring the size of these small pinholes using the current SEM method often produces inconsistent results when compared to pinhole printability. Early studies have suggested that since the SEM measures only the top surface of the pinhole, the measurement does not account for edge wall angle and partial filling which reduces the pinhole transmission and subsequent printability. This investigation focuses on several transmitted light approaches for reticle pinhole measurement on programmed defect masks. An attempt to correlate these methods back to traditional SEM and optical sizing methods will also be attempted.
A new die-to-database reticle inspection system has been developed to meet the production requirements for 130nm node 4x reticles, as well as, the early inspection requirements for 100nm node 4x reticles. This new system is based on the TeraStar platform1 developed recently by KLA-Tencor Corporation for high performance die-to-die and STARlight inspection of 130nm node reticles. The TeraStar platform uses high-NA triple-beam scanning laser optics for high throughput. The platform also includes a new generation of defect detection algorithms and image processing hardware to inspect, with high sensitivity and low false detections, the small linewidths, aggressive OPC, and advanced EPSM 4x reticles characteristic of the 130nm node. The platform further includes the TeraPro concurrent STARlight and die- to-die inspection mode for exceptional productivity. The necessary database elements have now been developed and added to the TeraStar platform, to give it die-to-database inspection capability. A new data format along with new data preparation, data rendering, and data modeling algorithms have been developed to allow high precision database matching with the optical image for exceptional die-to- database performance. The TeraPro high productivity features of the TeraStar platform have been extended to the die-to- database mode providing the opportunity to use STARlight and die-to-database modes concurrently. The system design and in-house test results are discussed.
A new die-to-database reticle inspection system has been developed to meet the production requirements for 130nm node 4x reticles, as well as, the early inspection requirements for 100nm node 4x reticles. This new system is based on the TeraStarT platform1 developed recently by KLA-Tencor Corporation for high performance die-to-die and STARlightT inspection of 130nm node reticles. The TeraStar platform uses high-NA triple-beam scanning laser optics for high throughput. The platform also includes a new generation of defect detection algorithms and image processing hardware to inspect, with high sensitivity and low false detections, the small linewidths, aggressive OPC, and advanced EPSM 4x reticles characteristic of the 130nm node. The platform further includes the TeraProTM concurrent STARlight and die-to-die inspection mode for exceptional productivity. The necessary database elements have now been developed and added to the TeraStar platform, to give it die-to-database inspection capability. A new data format along with new data preparation, data rendering, and data modeling algorithms have been developed to allow high precision database matching with the optical image for exceptional die-to-database performance. The TeraPro high productivity features of the TeraStar platform have been extended to the die-to-database mode providing the opportunity to use STARlight and die-to-database modes concurrently.
With the increased resolution of today's lithography processes, reticle pinhole defects are much more printable. Measuring the size of small pinholes using the current SEM method often produces erroneous results when compared to pinhole energy transmission. This is mainly due to the fact that SEMs do not accurately account for edge wall angle and partial filling which can dramatically reduce the pinhole transmission and subsequent printability. Since reticle inspection tools, like wafer steppers and scanners, use transmitted illumination, pinhole detection performance based upon top surface SEM defect sizing is often erroneous for small pinhole diameters. This study first uses simulation to predict printability. Then, a pinhole test reticle is developed with a variety of sub-200nm pinholes. The reticle pinholes are measured with an improved method incorporating transmission and imaged to wafer in order to assess printability.
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