As overlay tolerances tighten node-over-node, the measurement and control of overlay has progressed from the low (spatial) frequent domain toward higher spatial frequencies. At present up to 3rd order in the (non-scanning) slit direction can be addressed on high end systems. With the introduction of an advanced distortion-manipulator on an ArFi immersion scanners a significant improvement in the spatial frequency of overlay control can be achieved. This actuator will now enable at least up to 9th order lens distortion manipulation and control in the (non-scanning) slit direction, with future extendibility to on-the-fly adjustments while scanning. The manipulator setup and distortion control is fully incorporated in the scanner software and allows for lens fingerprint optimization, better dynamic lens heating control, and scanner stability control to maintain overlay performance over time. Also an external scanner overlay optimization interface is made available that enables machine-to-machine matching within the immersion platform as well as for cross-matching to the EUV platform. Via this interface also high spatial-frequent process corrections can be send to the scanner. In this paper, we will show the capability of the scanner-integrated distortion manipulator on abovementioned aspects using on-scanner aberration metrology, and in-resist distortion and overlay metrology.
Even with the large-scale adaption of EUV Lithography to High Volume Manufacturing, numerous device-critical product layers will still be exposed with Immersion Lithography Technology and therefore ZEISS and ASML keep investing in the next generation immersion extensions. The overlay accuracy has to be controlled over the exposure field more accurately and also on a higher spatial frequency grid. To support this functionality, a novel manipulator will be incorporated into the next generation of immersion optics, which is especially well-suited for high frequent distortion tuning. Furthermore, lens distortion measurements and adjustments will be done based on more field points. In this paper, we will show the unique correction functionality of this manipulator and show its various application fields for improving the performance of ASML scanners.
Immersion lithography started to become the main workhorse for volume production of 45-nm devices, and while
waiting for EUV lithography, immersion will continue to be the main technology for further shrinks. In a first step
single exposure can be stretched towards the 0.25 k1 limit, after which various double patterning methods are lining up
to print 32-nm and even 22-nm devices. The immersion exposure system plays a key role here, and continuous
improvement steps are required to support tighter CD and overlay budgets. Additionally cost of ownership (COO) needs
to be reduced and one important way to achieve this is to increase the wafer productivity. In this paper we discuss the
design and performance of a new improved immersion exposure system XT:1950i. This system will extend immersion
towards 38-nm half pitch resolution using a 1.35 NA lens and extreme off axis illumination (e.g. dipole). The system
improvements result in better CDU, more accurate overlay towards 4-nm and higher wafer productivity towards 148-
wph. Last but not least a next step in immersion technology is implemented. A novel immersion hood is introduced
giving more robust low and stable defects performance.
This paper shows the improvements in imaging performance on the ASML PAS5500/800TM, the PAS5500/850BTM and the TWINSCANTM AT:850BTM Step & Scan systems. During setup, the lens aberrations are measured by the TAMIS technique and optimized. This gives excellent imaging performance for aberration sensitive features such as 'two bar,' the DRAM isolation pattern and isolated lines printed with alternating PSM. Lithographic tests based on these features were developed and tested on a number of 800 and 850 systems and gave results well within specification limits. Consequently, the imaging performance has been improved for a wide range of applications.
An interferometer for VUV wavelengths was realized in order to improve the resolution and the sensitivity of optical metrology. To be able to work at wavelengths 157 nm up to 900 nm an apochromatic design was chosen using reflective optics. For the examination of the influence of the wavelength binary gratings with different periods, aspect ratios and depths, have been selected as test structures. The benefits and also the technological problems which come along with the use of VUV wavelengths are discussed. The design of this interferometer and measuring results with different wavelengths are presented.
To improve the resolution and the sensitivity of optical metrology an interferometer for VUV wavelengths was realized. To examine the influence of the wavelength especially with regard to the period of the object structure, an apochromatic design was chosen. This means an object can be measured with wavelength from 157nm up to 900nm without changing the optical setup. The design of this interferometer will be presented. The benefits and also the technological problems which come along with the use of VUV wavelengths are discussed. Further problems occur when deep binary structures are measured. An overview of those problems will be given and the use of white light interferometric methods to overcome those problems will be discussed. Measurements have been performed with different light sources. The wavelength scale is extended from the visible to the deep UV, the coherence properties of the sources are very dissimilar and the interferograms are evaluated with different techniques. The experimental results will be presented and discussed.
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