A composite photodetector was fabricated by using InAs nanowires and single-layer graphene. Under positive/negative bias, the device exhibits the response characteristics of a negative photoconductive photodetector and a Schottky junction photodetector, respectively. Under positive bias, the device is a negative photoconductive photodetector. The response current is less than the dark current. The maximum responsivity of the device is 736.4A/W, and there is also a significant response current in the case of low illumination intensity. Under negative bias, the device is a Schottky junction photodetector with a maximum response of 9.4A/W and a barrier height of 0.16eV. Combining the characteristics of the two photoelectric response characteristics, the advantages are complemented. It greatly improves the applicable environment of the device, expands the application space of the photodetector, and provides a new idea for the preparation of the photodetector
Single photon sources are key devices for quantum communication and quantum computation. Recently, photonic nanowires with an embedded quantum dot have demonstrated to provide remarkable extraction efficiency due to the axial waveguide configuration and nanocavity function of nanowire. However, for thin nanowires, stable modes cannot be supported, resulting in very poor Purcell factor which is an important parameter of single photon sources. In this paper, a novel single photon source structure with a high Purcell factor is proposed and simulated. The structure consists of a GaAs nanowire embedded with an InAs quantum dot surrounded by Au. The enhancement of the Purcell factor is simulated by finite difference time domain (FDTD) method. Without Au shell, the Purcell factor quickly drops as the diameter of nanowire decreases. When the diameter is decreased to 50 nm, the nanowire cannot support any stable modes, resulting in a rather low Purcell factor of 0.009. After the Au shell is introduced, the Purcell factor is dramatically enhanced, and the enhancement ratio increases as the nanowire diameter decreases. The highest enhancement ratio of 1028 can be obtained at a nanowire diameter of 25 nm and Au shell thickness of 75 nm. The enhancement of the Purcell factor is attributed to the decrease of the cavity effective mode volume, which is inversely proportion to the Purcell factor. This work may offer a way to achieve single photon sources with an ultra-small size and ultrahigh Purcell factor.
One of the current research trends in silicon photonics is to integrate many kinds of optical functionalities on a single chip. In this paper, based on Silicon-on-Insulator (SOI) we design a tunable filtering waveguide consisted of a Fabry-Pérot cavity and a straight waveguide. The Fabry-Pérot cavity is used for wavelength selectivity and the waveguide is used for light guide. The transmission characteristic of the device has been numerically simulated. The result shows that the Full-Width Half-Maximum (FWHM) is inversely proportional to pairs of the DBR. The tunable filtering waveguide can be integrated with waveguide photodetector, and hopefully to be used in WDM system.
In this paper, we proposed a novel photodetector composed of cascaded microring resonators on silicon-on-insulator. In order to enhance the tolerance of signal wavelength drifting in optical communication, the photodetector was designed with a flat-top steep-edge response. In the photodetector, we used polarization insensitive cascaded silicon microring resonators as optical filter cavity, and used a silicon racetrack resonator bonded in p-i-n chip as optical detecting cavity. We used finite element (FE) mode solver, finite different time domain (FDTD), and transfer matrix method (TMM) to simulate the behavior of the polarization insensitive optical filter. With optimized parameters, the photodetector showed high quantum efficiency, narrow line width, and flat-top steep-edge.
Add/drop filters are key components of Wavelength Division Multiplexing (WDM) communication systems. Free spectral range(FSR) is a key parameter for Add/drop filters, the FSR should operate within the entire C-band (1530-1562nm).And flat-top drop-port response with a sharp rolloff is also import, Flatness of the passband, sharp roll-off from passband to stop band are necessary to minimize the pulse broadening and the packing efficiency of wavelength channels. In this paper, we proposed an asymmetric approach to design high-order microring filters, The aim is to achieve large extension ratios and adequate suppression of the spurious interstitial mode, meanwhile, flat-top and steep-side response in filter could be obtained by this approach. Our simulation results showed an extended FSR of 40nm, reducing the interstitial peak suppression from 5dB to 35dB and a boxlike filter response with sharpe factor(SF) of 0.68. And a quality-factor of 2961 and a 3-dB bandwidth of 0.52nm is achieved.
A new type of subwavelength plasmonic waveguide based on a core-shell structure has been proposed. It is based on a semicylinder-shape dielectric-loaded plasmonic waveguide supporting the excitation of surface plasmon polaritons (SPPs). Simulation results reveal that the proposed waveguide exhibit a better trade-off in terms of mode localization and propagation length when compared to the traditional dielectric-loaded plasmonic waveguide. In addition, a ring resonator formed with the proposed waveguide shows a perfect performance with 1.8nm bandwidth and 23dB extinction ratio.
The integration of optical functionalities on a chip has been a long standing goal in the optical community. The ability to integrate compound semiconductors onto foreign substrates can lead to superior or novel functionalities. In this paper we integrate InGaAs /InP photodetectors onto Silicon-on-Insulator (SOI) racetrack resonators. The racetrack resonators can be fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The racetrack structure is used for wavelength selectivity and the straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide. The transmission characteristic of the racetrack resonator with a multimode interference (MMI) coupler has been numerically simulated. The result shows that the free spectral range (FSR) is inversely proportional to the length of the racetrack resonator. The FSR decreases as the increase of the length of straight waveguide sections or the radius of rings. The generalized multimode transmission matrix of the MMI has been evaluated with beam-propagation method. It has been found that the resonance wavelength can be reasonably predicted. Finally, the equation of quantum efficiency of the device is derived. The calculated peak quantum efficiency of the designed photodetector can achieve about 90% at 1.5499 μ m.
Three asymmetric multi-core fibers namely 3-linear-core-array fiber, 5-linear-core-array fiber and
5-circular-core-array fiber were designed. The supermode characteristics were investigated using a finite element method
(FEM) with perfect matched layer (PML) boundaries. The profiles of supermodes supported by these multi-core fibers
were presented. The dispersion characteristics of these multi-core fibers had been analyzed. The numerical results show
that the peak value group velocity dispersion of the
5-circular-core-array fiber can reach
-2.4×105ps/nm•km, and the
GVD bandwidth is up to 25nm(1535-1560nm), covering almost the whole C-wavelength band. It can compensate for
more than 13000 times its own length that of the ordinary SMF.
A dual-parallel-core fiber is proposed for dispersion compensation of single mode fibers (SMFs) by using
coupled-mode theory. From the numerical results, the two-parallel-core structure exhibits very high negative chromatic
dispersion [-9.7794 × 105ps/km/nm], and full width at half maximum dispersion (FWHM) of ~6nm.
GaAs/InxGa1-xAs/GaAs double-heterostructure nanowires were grown by Metal-organic Chemical Vapor Deposition on GaAs (1 1 1)B substrate using the vapor-liquid-solid growth method. By tuning the In content(x) from 0.2 to 1, we fabricated several GaAs/InxGa1-xAs/GaAs nanowire heterostructrues with different InxGa1-xAs parts and studied their characteristics. We found that all the InGaAs segments were successfully grown on GaAs sections, while the InAs nanowires were grown kinked or downward. By inserting a composition-graded InxGa1-xAs buffer segment between GaAs and InAs nanowires, high yield of straight
GaAs/InxGa1-xAs/GaAs nanowire heterostructrues were realized.
N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS)
mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for
GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is
found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux
rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without
any stacking faults from bottom to top for all three samples were achieved.
This paper proposes a circuit control method achieving the flat-top steep-edge response of photodetectors. The response
is realized using three wavelength selective photodetectors and the circuit which consists of amplifiers, comparators and
a AND gate. Two groups of experiments were carried out. In group 1, 0.5dB, 3dB, 20dB bandwidths are 2.76nm,
3.29nm, 4.58nm from 1546nm to 1549.3nm. In group 2, 0.5dB, 3dB, 20dB bandwidths are 3.19nm, 2.89nm, 3.06nm
from 1554.8nm to 1557.6nm. The results of experiments show that the desirable flat-top steep-edge response can be
gained and the response linewidth is adjustable by selecting different photodetectors, so that the requirement of the
WDM system and the network can be met. The method is easy to realize with low cost and has wide application in
optical measurements and optical processing etc.
A novel approach, using a PNA(network analyzer) instead of Spectrum Analyzer in optical heterodyne measurement
system, to characterize the frequency response performance of photodetectors is proposed. This scheme synthesize the
advantages of both the optical heterodyne technique and accurate calibration technique of PNA. In this paper, two tunable
narrow linewidth lasers are used to reduce the errors caused by the variations in the linewidth of the beat signal, and the
optical power is accurately monitored and controlled to minimize the noise due to laser output power fluctuates. We
analyze the influence of variations linewidth, and associative simulation on this influence is been done. And an error
eliminate model is presented to remove the influence of variations linewidth. SOLT calibration technique is used to
accurately calibrate the power receiver of PNA. In addition, when configured with an 80 GHz frequency mixer in this
measurement system, we can achieve the frequency response measurement of a 80 GHz photodetector since we are using a
40 GHz PNA.
We propose a novel design for photonic crystal fiber, which has flattened-dispersion, high nonlinear coefficient and low
confinement loss for supercontinuum generation. The proposed fiber needs appropriate number of design parameters.
Results show that eight-ringed photonic crystal fiber is obtained with nonlinear coefficient greater than 33W-1 km-1, and
small dispersion slope 2.00×10-3ps/nm2/km in the telecommunication window. Ultra flattened dispersion of -1.65~ 0.00
ps/nm/km and confinement loss in super low order of 10-4dB/km are simultaneously obtained ranging from 1.45μm to
1.65μm. It's shown that through numerical analysis the novel micro-structured optical fiber with small normal
group-velocity dispersion and nearly zero dispersion slope offers the possibility of efficient supercontinuum generation
in the telecommunication window using a few ps pulse. supercontinuum with 70nm-bandwidth at 1550nm is achieved
through only 150m-long fiber.
KEYWORDS: Boron, Gallium arsenide, Diffraction, Gallium, Crystals, Atomic force microscopy, Indium, Metalorganic chemical vapor deposition, Chemical species, Temperature metrology
High quality zinc-blende BxGa1-xAs, BxAl1-xAs, BxGa1-x-yInyAs epilayers and relevant MQW structures containing 10-
period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented
(001)GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron,
trimethylgallium, trimethylaluminium, trimethylindium and arsine were used as the precursors. Boron incorporation
behaviors have been studied as a function of growth temperature and gas-phase triethylboron mole fraction. In this study,
the maximum boron composition x of 5.8% and 1.3% was achieved at the same growth temperature of 580°C for bulk
BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs
epilayer with boron composition of about 4% reached 1.24μm.
Conversion from a 10 Gb/s non-return-to-zero (NRZ) signal at 1550 nm to a 10 Gb/s return-to-zero (RZ) signal at 1561
nm has been experimentally verified based on four-wave mixing (FWM) in a highly nonlinear photonic crystal fiber
(HNL-PCF) without the need of an extra NRZ-to-RZ conversion step.
The signal light at 1550nm was modulated by a NRZ electric pulse pattern. The pump light at 1555.540 nm generated by
a mode locked laser (MLL) was modulated by a clock signal. When these two lights were controlled strictly and
amplified to about 22dBm, the FWM effect happens in HNL-PCF. Two new spectrum peaks were achieved at 1545 nm
and 1561 nm respectively. Then the peak at 1561nm was filtered out and discussed.
Then we changed the wavelength of signal light from 1543nm to 1569nm. The FWM effect appeared in this whole
wavelength range. But the best quality of conversion signal was achieved at 1550nm. So when the signal at 1561nm was
filtered out , it was a pulse signal carrying information. The signals at other wavelength were pulse signals without
information.
A broadband dispersion-compensating microstructure fiber is proposed. The designed fiber is shown to exhibit large
normal dispersion up to -2000ps/nm/km at 1550nm and compensate conventional single mode fiber within 0.6% residual
dispersion compensation ratio over a 100-nm wavelength range. Furthermore, the effective modal area is about 16μm2 at
1550nm.
We use improved fully vectorical effective index method (IFVEIM) to design a flattened-dispersion photonic crystal
fiber (PCF). By using such 1.5-km-long photonic crystal fiber in the numerical simulation, we could obtain high pump
depletion in a cw fiber optical parametric amplification (OPA) with a 1600-mW pump at 1560nm.
The reflectivity and the Bragg wavelength of a fiber Bragg grating formed in a photonic crystal fiber with central pure
core defect and a regular hexagonal array of microscopical holes cladding were investigated by the improved effective
index method, the calculated results indicate that the scalar approximation condition will not be satisfied when the filling
factor is more than 0.45, the reflectivity increases from 86.6% to 93.9% with the filling factor increasing, and the Bragg
wavelength decreases from 1550.347nm to 1549.236nm when f <0.53. This rules provided the theoretical basis for
designing new fiber Bragg gratings formed in the PCF.
A theoretical study of flat supercontinuum (SC) generation in a highly nonlinear photonic crystal fiber (PCF) is presented. We propose a chromatic dispersion profile of a highly nonlinear PCF for flatly broadened SC generation around 1550nm. The proposed chromatic dispersion profile of the fiber which is a convex function of wavelengths has small normal group-velocity dispersion at the pump wavelength and the dispersion slope around which is flat. It is found that the fiber with such dispersion characteristics is suitable for generating a relatively flat SC. The initial chirp of the input pulse also has a significant effect on SC generation in photonic crystal fiber. A flatter and wider spectrum can be obtained by the pulse with appropriate positive initial chirp.
An all-optical tunable wavelength converter using a combination of self-phase modulation (SPM) effects in highly nonlinear microstructure fibers and narrowband spectral filtering is investigated, which is reported for the first time to our knowledge. Wavelength conversion over a±4nm bandwidth of a 10Gb/s date rate is obtained with good efficiency. A 25-m-long microstructure fiber with zero-dispersion wavelength at 800nm is used as the nonlinear medium. The core diameter of microstructure fiber is 2.4μm and the outer diameter is 125μm. The nonlinearity is γ=36km-1W-1, which is 20 times higher that that of a conversional dispersion-shifted fiber. The dispersion at the wavelength of 1550nm is ~+150ps/nm-km and the loss is 40dB/km.
A highly nonlinear photonic crystal fiber (PCF) is proposed to construct a nonlinear optical loop mirror (NOLM) for pulse compression and shaping. The proposed highly nonlinear PCF is a large air-filling fraction holey fiber with a small fiber core. The characteristics of the fiber have been studied. The NOLM made up of this PCF and an asymmetrical coupler for pulse compression and pedestal suppression is theoretically investigated. The results show that when compared with a soliton-effect compression in which only a piece of PCF is used, a NOLM based on a highly nonlinear PCF significantly suppresses pulse pedestals with a relatively short loop length. For a given input pulse, there exists an optimal loop length at which the high quality compressed pulse can be obtained. The proposed scheme can be used to compress long pulses by use of appropriate fiber lengths and works well for a broad range of input soliton orders.
In this paper, the experiment on all-optical switching based on microstructured optical fiber (MOF) is reported. In experiment, a 25-meter-long MOF(γ=36W-1km-1@1550nm) is used as nonlinear medium of nonlinear optical loop mirror and the input signal is generated by a 10GHz tunable picosecond laser source (u2t TMLL1550), with a full-width at half-maximum (FWHM) pulse width of 2 ps centered at 1550 nm. With the increase of input power, a π nonlinear phase shift is obtained by 40/60 coupler in experiment, but the same thing not be found by 48/52 coupler. Strong confinement of electromagnetic radiation in the fiber core allow that microstructured optical fiber can have a much higher nonlinearity per unit length than conventional fibers, and consequently devices based on such fibers can be much shorter in length than their conventional counterparts. Additionally, the switching can also be used as reshaping devices.
We develop a mathematical model of chirp in a Semiconductor Optical Amplifier (SOA)-based wavelength converters using cross-gain modulation (XGM).Using the model, we study numerically the effects that the chirp of Gaussian pluses and ultra-Gaussian pluses make into the optical signal pluses in Semiconductor Optical Amplifier (SOA), and theoretically analysis the parameters that affect chirp variations.
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