In the paper, a silicon PN junction photodetector is developed on the basis of n-type single-crystal (100) silicon substrate.
The properties of this semiconductor photodetctor depend on the temperature to certain extent. We emphasize on the
study on temperature characteristic of the photodetector: Firstly, the temperature behavior of dark current at zero bias
voltage and wide temperature range was investigated. Results show that dark current increases exponentially with
temperature over room temperature. Secondly, the temperature behavior of photo current at zero bias voltage and wide
temperature range was studied. The temperature characteristic is analysesed in the theory and optimized.
A novel Si LED with three terminals has been designed and fabricated compatible completely with standard n-well
CMOS technology. It is composed by a combination of a forward biased p+-n junction controlling by gate voltage and a
poly-Si/ultrathin oxide/Si tunneling junction. The experimental results demonstrates that: (1)The optical emitting power
of LED increases with both forward p+-n junction current increasing and positive gate voltage increasing; (2) The optical
emitting power of LED still increases with gate Voltage increasing while p+-n junction forward current at zero; (3) The
spectra of the optical output power on wavelength λ occurs a peak near 1000nm. The results can be explained from the
enhancement on the p-n junction forward current by the gate voltage induced barrier lowering effect and the
S(poly-Si)OS tunneling junction theory.
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