A novel uni-traveling-carrier photodiode (UTC-PD) array’s structure for power combining above 110GHz was designed and fabricated to extend a single PD’s power limit in the THz regime. Four identical monolithically integrated UTC-PDs’ power was combined with T-junctions connecting every 6.5µm-diameter anode of these InGaAs-InP PDs. All PDs and combiner were fabricated on a 12µm-thick InP substrate, and the fulfilled chip was then measured after flip-chip bonding on a 50µm-thick AlN-based coplanar waveguide circuit. A continuous wave output power 0.19mW was measured at an operating frequency of 112GHz with a bias voltage of -3V.
A novel high-power charge-compensated modified uni-traveling carrier (CC-MUTC) PD on a semi-insulating InP substrate was designed and fabricated. To extend its 3-dB bandwidth, its absorption layer adopted a p-type Gaussian doping structure, and thickness of the InP substrate is reduced to 12µm. The back-illuminated device was flip-chipped mounted on a 100µm-thick diamond-based coplanar waveguide circuit to facilitate heat dissipation. Typical responsivity of the fabricated PDs is 0.7A/W at 1.55μm wavelength for a bias voltage of -6V. The output power of 20.4dBm was measured at 8GHz, 21.7dBm at 10GHz and 19.4dBm at 12GHz. The newly designed UTC-PD has sufficiently good potential for application in need of the high output power and also for next-generation digital and analog optical fiber transmission systems.
InP-based uni photodiode(UTC-PD) array consisting of four photodiodes, power combiner and a monolithically integrated bias circuit using a 1/4-wavelength microstrip is presented. To increase the upper limit of power output, four identical UTC-PDs were monolithically integrated along with T-junctions to combine the power from the four PDs. Each single photodiode exhibits at least -6dBm at 110GHz, and the array was designed to produce at least 1mW in the terahertz frequency band with photocurrent of around 25mA per PD and bias voltage of -3V. The circuit has been fabricated on a 12µm-thick InP substrate, and is flipped on a 50μm-thick AlN-based coplanar waveguide circuit for test.
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