A new micromachined thermal anemometer based on laterally polysilicon diode (LPD) temperature-sensing elements is developed in the paper. The LPD was fabricated with CMOS compatible process and its temperature-sensing characterization is also investigated. The measured results show the forward current increases with temperature near linearly. The temperature coefficient is about 1.8mV/K, which is close to that of monocrystalline silicon diode. A anemometer with a ring-like polysilicon heater and 8 LPD temperature-sensing elements were fabricated and characterized, air flow up to 120 cm3/s was measured and more than 8 directions of wind can be detected.
An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.
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