Transparent thin films are manufactured by PLD (pulsed laser deposition) in different oxygen pressure. The various
property of samples is measured by Atomic Force Microscope (AFM), X-ray diffraction (XRD) and optical transmission
spectrum. All samples retain the original structure in wurtzite lattice by XRD, there is not being of metallic cobalt or
other impurity phase with the limit detection. The surface morphology of the films observes the smoother than that in
undoped ZnO thin film. The transparency of thin films has altered greatly with the different oxygen pressure or not by
PLD, which is shown that the oxygen pressure has impacted on the transparency of the film and surface morphology.
And UV-visible spectra fully have been demonstrated the presence of Co2+ to substitute for Zn2+ in the films with the
different oxygen pressure.
In this paper, the effects of substrate temperature during film growth at relative high temperature have been reported. The
IGZO thin films were fabricated by means of pulse laser deposition (PLD) with the InGaZnO (In2O3: Ga2O3: ZnO=1: 1:
8 mol %) target. The substrate temperature altered from room temperature (RT) to 800 °C. The product thin films were
characterized rigorously by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-VIS spectrometer, Halleffect
investigation and X-ray photoelectron spectroscopy (XPS). The IGZO films was with smooth surface, high
transmission in the visible spectral range (about 75-92 %), carrier mobility > 8.0 cm2/(V·s) and carrier concentration at
about 1018 cm-3. Finally, the character changes influenced by temperature were obtained from analysis results. This task
may benefit to a flat panel display in the process of thin film transistors(TFT) fabrications and improvements.
In this paper, the high temperature solid state reaction method was applied to the preparation of SrTiO3 ceramic target.
The phase of the target has been researched in experiment by X-ray diffraction (XRD). We found that solid state reaction
has achieved completely. Then SrTiO3 thin films on MgO (100) substrate were manufactured by PLD using the
triple-frequency harmonics of pulsed laser Nd: YAG. The thickness of the SrTiO3 thin films was measured using a stylus
profiler. Their microstructure and surface morphology were analyzed using X-ray diffraction (XRD) and atomic force
microscopy (AFM). Their optical character was characterized using optical transmission spectrum. Additionally, X-ray
photoelectron spectroscopy (XPS) spectra were used to characterize the surface chemical composition of the
SrTiO3 thin film. In accordance with the above text result, the relation between the substrate temperature and the SrTiO3
thin films' the structure and character was analyzed and discussed. With increasing temperature of the substrate, film
grain size gradually increased and then smaller. The optimized substrate temperature was found to be 700 °C at which the
STO films' structure could uniformly dense. The STO films present a low optical absorption in the 400~1000nm
wavelength range, and the substrate temperature is not the main reason for the impact of the optical absorption. The
optical band gap energy was found to be about 3.5 ~ 4.0eV for the STO thin film. The valences of the three elements (Sr,
Ti, and O) in the STO film prepared by PLD are 2+, 4+ and 2-, respectively.
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