We propose a novel approach to perform the chip scale mask to topography mapping by building a library of repetitive mask patterns. We call them vicinity patterns. They describe a collection of mask features in close proximity. This pattern library is used to synthesize 3-D topography of an arbitrary part of the chip topography. We define some process-related parameters, which we call critical interaction lengths, as a basis for mask decomposition into the vicinity patterns.
We have extended the capability of a vector 3D lithography simulator METROPOLE-3D from a photomask simulator to become a full 3D photolithography simulator. It is designed to run moderately fast on conventional engineering workstations. METROPOLE-3D solves Maxwell's equations rigorously in three dimensions to model how non-vertically incident light is scattered and transmitted in non-planar structures. METROPOLE- 3D consists of several simulation modules: photomask simulator which models the aerial image of any mask pattern (including phase-shifting masks); exposure simulator which models light intensity distribution within the photoresist and arbitrary underlying non-planar substrate structures; post-exposure baking module which models the photo-active compound diffusion, chemically amplified (CA) photoresist cross-linking and de-protection processes; and finally, 3D development module which models the photoresist development process using the level-set algorithm. This simulator has a wide range of applications in studying the pressing engineering problems encountered in state-of-the-art VLSI fabrication processes. The simulator has been applied to the layout printability/manufacturability analysis to study the dominant physical phenomena in lithography, deposition, CMP and etching processes that affect the transfer of mask patterns to the final etched structures on the wafers. Using this new 3D rigorous photolithography simulator, optical proximity effects have been studied. A reflective notching problem caused by the reflective substrate structure has been thoroughly studied, and an anti-reflective coating (ARC) solution to this notching problem has been optimized by the simulations. Finally, a 3D contamination to defect transformation study was successfully performed using our rigorous simulator.
Particulate contamination deposited on silicon wafers is typically the dominant reason for yield loss in VLSI
manufacturing. The transformation of contaminating particles into defects and then electrical faults is a very complex process
which depends on the defect location, size, material and the underlying IC topography. A rigorous topography simulator,
METROPOLE, has been developed to allow the prediction and correlation of the critical physical parameters (material, size
and location) of contamination in the manufacturing process to device defects. The results for a large number of defect
samples simulated using the above approach were compared with data gathered from the AMD-Sunnyvale fabline. A good
match was obtained indicating the accuracy of this method which provided a framework for developing contamination to
defect propagation/growth macromodels. We have demonstrated that the understanding of defect transformation can be
applied to early yield impact prediction.
Particulate contamination deposited on silicon wafers is typically the dominant reason for yield loss in VLSI manufacturing. The transformation of contaminating particles into defects and then electrical faults is a very complex process which depends on the effect location, size, material and the underlying IC topography. A rigorous 2D topography simulator based on the photolithography simulator METROPOLE, has been developed to allow the prediction and correlation of the critical physical parameters of contamination in the manufacturing process to device defects. The results of a large number of defect samples simulated using the above approach were compared with data gathered from the AMD- Sunnyvale fabline. A good match was obtained indicating the accuracy of this method which provided a framework for developing contamination to defect propagation/growth macromodels.
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