KEYWORDS: Ions, Electrons, Signal to noise ratio, Image intensifiers, Monte Carlo methods, Interference (communication), Microchannel plates, Night vision, Scattering, Image quality
To analyze the effect of ion barrier film in micro-channel plate on the performance of proximity focusing low-light-level
image intensifier, the noise characteristics of ion barrier film are studied. The transmission electrons’ distribution for
those have transmitted ion barrier films is determined by simulating the collision interaction between the incident
electrons and ion barrier film with Monte Carlo method. Furthermore, the relationship model of the incident electrons
and transmission electrons are established by time differential method. We simulate how the incident electron energy and
ion barrier film thickness affect the noise factor of ion barrier film. The simulation analysis results reveal that the noise
factors gradually decreased with the increase of incident electron energy (0.1 KeV - 2.0 KeV) and decreasing of film
thickness (1 to 8 nm). So the tendency of simulation results is accordant with the actual devices. The smaller noise factor
means the better image quality for low-light-level image device, and the simulation results suggest how to realize the ion
barrier film in low light level image intensifier with low noise factor. Therefore, the study of ion barrier film’s noise
characteristics provides theoretical and technical support for optimization of the
three generations low-light-level device’s performance.
ZnO is the most promising material for the application of an ultraviolet (UV) detector. However the shortage of ptype
ZnO becomes the biggest blockage for fabricating ZnO-based semiconductor device. In this paper, following
experiments had been done: Firstly, the zinc nitride powders were synthesized through the nitridation reaction of Zn
power with NH3, and the optimized synthesis temperature was at 600°C. Next, the zinc nitride powder was fabricated into
a zinc nitride sputtering target by a single pressing process. Thirdly a thin layer of zinc nitride film was formed on silicon
and quartz substrate using magnetron sputtering method. Fourthly, the zinc nitride film was oxidized into p-type ZnO,
and the best optimized temperature for forming p-type ZnO by oxidizing Zn3N2 thin film was at 500°C. Lastly, the ohmic
contact for p-ZnO and ZnO based detector were fabricated. It was found Al and Ni/Au showed ohmic contact properties
to n- Si and p-ZnO, respectively, and the p-ZnO/n-Si junction as a UV detector was feasible.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.