We present recent work on III-V semiconductor mid-infrared light emitters and detectors. The employed type-II broken bandgap alignment between InAs and GaxIn1-xSb allows for widely tunable emission and absorption wavelengths with energies below the individual material bandgaps. We demonstrate room temperature operation of GaSb-based interband cascade lasers (ICLs) emitting between 6.1 and 6.9 μm. Furthermore, we investigate ideal growth conditions for InAs/GaSb type-II superlattices (T2SL) for the implementation in interband cascade detectors (ICDs) with cut-off wavelengths up to 7.5 μm at room temperature. We focus on strain balancing different SL compositions for different cutoff wavelengths via Sb-soak and sub-monolayer (SML) growth of InSb. An ideal growth temperature of TSub=430 °C is found by comparing the quality of different sets of samples by means of high-resolution X-ray diffractometry (HRXRD) and room temperature photoluminescence (PL) measurements.
We present recent progress on novel mid-infrared (MIR) light emitters and detectors. Optimized heterostructure and high-quality crystal growth allow for room temperature operation of interband cascade lasers (ICLs) with lasing wavelengths 𝜆 ≥ 6 μm. They employ asymmetric W-shaped optical quantum wells comprising highly strained layers of InAs/GaInSb/InAs with broken bandgap alignment. Furthermore, we discuss novel interband cascade detectors (ICDs) and resonant tunneling diode photodetectors (RTD-PDs) for MIR light detection. Different superlattice (SL) absorber design strategies for ICD cut-off wavelengths exceeding 𝜆 ≥ 7.0 μm are presented. SL absorbers ranging from standard InAs/GaSb SL to M-/W-shaped SL absorbers employing ternary barriers are compared.
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