KEYWORDS: Blue lasers, Near infrared, Copper, Laser welding, Laser processing, Fiber lasers, High power lasers, Beam diameter, Light absorption, Thin film coatings
Copper is widely used in many industries due to high electrical conductivity and with the recent acceleration of EV shift, the needs for copper material processing are rapidly increasing. High power near-infrared (NIR) fiber lasers have been used in laser processing since high electric-optic conversion efficiency and excellent laser beam quality. However, copper welding with NIR fiber lasers is challenging. The absorption of copper is low in the NIR, and copper with high thermal conductivity diffuses the heat rapidly at welding spots. Previously we reported the hybrid laser system with 1- kW blue laser and 3-kW NIR fiber laser for copper welding. Blue laser with high absorption of copper generates stable molten pool at welding spots and assists NIR fiber laser processing for uniform welding and less spattering. In this paper, we present the improvements of blue laser. The first one is high power 2-kW with 300-μm core diameter and the second one is high brightness 1-kW with 200-μm. These are achieved by high power laser diode module, which has 500-W output power with 110-μm core diameter, and fiber-bundled beam combiner. Copper welding characteristics using this improved blue laser and NIR fiber laser would also be discussed.
We present a numerical model based on Coupled Mode Theory for modelling and optimization of thermally tuned semiconductor lasers used in digital coherent transceivers. This modular approach allows combinations of waveguides, gratings and microrings, and enables the quick simulation of longitudinal modes. Our comparative study shows that the combination of a phase-modulated DBR and a microring results in a promising, compact tunable laser diode for telecommunication and signal processing. It requires low tuning power due to the small footprint of microring. Wavelength tuning range is controlled effectively by the finite number of peaks of phase-modulated DBR, and the envelope of its reflectivity comb can be optimized numerically.
Furukawa's 1060nm VCSELs with double-intra-cavity structure and Al-free InGaAs/GaAs QWs enable us to realize
low power consumption, high speed operation and high reliability simultaneously. The power dissipation was as low as
140fJ/bit. Clear eye opening up to 20Gbps was achieved. Random failure rate and wear-out lifetime were evaluated as
30FIT/channel and 300 years.
For higher speed operation, thickness of oxidation layer was increased for lower parasitic capacitance of device.
Preliminary reliability test was performed on those devices. In high speed operation faster than 10Gbps, conventional
lifetime definition as 2dB down of output power is not sufficient due to smaller margin of modulation characteristics. We
suggest threshold current as a barometer for degradation of modulation characteristics. The threshold currents of our
VCSELs degrade small enough during accelerated aging test. We also observed no remarkable change in 25Gbps eye
diagram after aging test. The definition of life time for high speed VCSEL is discussed from the change in threshold
current and so on in addition to the conventional power degradation during aging. It is experimentally verified that our
VCSELs are promising candidate for highly reliable light source including long term stable high speed operation.
This paper reviews research and development of 1060nm VCSELs at Furukawa Electric. We pursue the simultaneous
realization of three strong demands for low power consumption, high reliability, and high speed. For this purpose, we
have chosen compressively strained InGaAs/GaAs active layers emitting in a 1060 nm wavelength range because of their
advantages of lower threshold voltage, smaller defect propagation velocity, and larger material differential gain,
compared to those of GaAs/AlGaAs active layers widely used in 850 nm VCSELs. Oxide-confined and double intracavity
structures provide low and stable electrical resistance as well as low optical loss. The developed VCSELs
exhibited low threshold currents of 0.31 mA at 25 °C and 0.56 mA at 90 °C, together with highly uniform slope
efficiency distributions throughout a wafer. We also demonstrated 10 Gbps error free transmission at a very low bias
current of 1.4 mA, yielding low power dissipation operation of 0.14 mW/Gbps. Clear eye openings up to 20 Gbps were
confirmed at a low bias current of 3mA. A series of endurance tests and accelerated aging tests on nearly 5000 VCSELs
have proved Telcordia qualified high reliability and a very low failure rate of 30 FIT/channel at an operating temperature
of 40 °C and a bias current of 6mA, with a 90% confidential level.
The demand for the on board intra-chip optical interconnection as the "Green interconnect" have been growing so
rapidly in order to catch up the speed of the performance development of high performance computing systems. In this
report, our continuous study results expanding to intra-chip application in terms with power consumption and reliability
are shown for the "Green" 1060nm VCSEL arrays developed by Furukawa Electric1.
As the basic performance level, the clear eye opening up to 20Gbps was achieved with low power dissipation level of
160fJ/bit with voltage swing level of 130mVpp. This value would be considered as the same level of the 140fJ/bit in
10Gbps operation with 75mVpp.
In the reliability test, our large scale FIT rate test had been reached up to 7.8E7 device hours and the estimated FIT rate
of 30FIT/ch was obtained from no failure sample and confidence level of 90%. Our wear-out study was performed with
high stress test of 170°C ambient temperature and estimated failure rate for 10years service time was 0.3FIT/ch for this
mode. Our 1060nm VCSEL with low power consumption level of 140fJ/bit and high reliability of 30FIT/ch would be
projected to a light source for intra-chip application.
No systematic studies on 1060nm high speed VCSELs have been reported in terms with reliability so far to our best
knowledge. In this work, a systematic and intensive study on reliability has been performed for our 1060nm VCSELs
consist of double intra-cavity and oxide confined structure with >70ps eye opening margin in Ib=3mA. Estimated power
dissipation per bit rate of >5Gbps/mW at Ib=2mA was obtained from low series resistance and low drive voltage
characteristics due to effective current injection in our double intra-cavity structure. Aging tests for 3,467pcs discrete
non-hermetic VCSELs were performed under 6mA, 70°C to 120°C and up to 5,736 hours, which is equivalent to over
10million device hours in normal operating condition of 40°C and Ib=5mA. We found one degraded device due to the
disconnection of the metal interconnecting layer, resulting in 81Fits (C.L.=90%) under Ea=0.35eV and no current
accelerated factor. Also, their degradation of threshold current after 1,000 hours operation was less than 0.1mA under
high stress condition of >40kA/cm2 and 120°C, which corresponds to more than hundreds year operation.
No eye diagram degradation was observed as far as no large threshold current increase under the high stress condition
up to 40kA/cm2. It is experimentally proven that inherent potentiality of the VCSELs with 1060nm InGaAs-QW and
double intra-cavity structure would be applicable to the future large green data traffic system.
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