This paper demonstrates the use of lifted E2 nozzle with modified developer recipe in TEL MARK 8 track to reduce killer defects such as E2 nozzle imprints and contamination such as resist residues and developer strain. This concept has helped to improve machine uptime due to less occurrence of E2 nozzle related defects shutdown.
This paper demonstrates the impact of introducing air-shower unit over the stepper prealignment module on the overlay performance of 0.35micrometers process technology. There is a overall improvement in overlay by 8-12nm for the FEOL process (poly to active) and 25-30nm improvement for W-CMP BEOL process .
This paper demonstrates the overlay capability of ASML's ATHENA alignment system on I-line steppers for W-CMP processes. The evaluation presents the method used to find the best scribe-line marks, alignment recipe and the long term overlay capability of ATHENA for a 0.35micrometers device in a production environment. This alignment capability for W-CMP meets the overlay requirement for the 0.35micrometers process and thus leads to device yield improvement.
As the technology shrink to smaller Critical Dimension (CD) geometry, Spin On Glass (SOG) and Chemical Mechanical Polishing (CMP) techniques are employed. For 0.30/0.35micrometers processes that uses these techniques, wafer edge dies were having zero yield. These zero yielding wafer edge dies were found to be caused by topography difference between wafer edge and center due to coating, etching and polishing non-uniformity. The use of Wafer Edge Exposure (WEE) using ultraviolet light to create the Edge Bead Removal (EBR) on selected layers provide a more consistent and sharper EBR ring as compared to liquid EBR. This will also result in more complete dies at the wafer edge. The stepper is only able to provide either or no leveling information for the partial wafer edge fields due to the location of the field being too close to wafer edge. In this paper, we present an approach to resolve this problem which addresses the shortcomings of the stepper. We employ a manual top down CD Sem measurements on these non yielding wafer edge dies to check on the CD and profile, a different exposure and/or focus is/are than applied to these non yielding wafer edge field. KLA scan and sort yield are than used to confirm the effectiveness of the changes.
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