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Yohjiro Kawai
at Meijo Univ
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Publications (1)
Proceedings Article | 22 February 2008 Paper
Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy
Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Proceedings Volume 6889, 688904 (2008) https://doi.org/10.1117/12.784113
KEYWORDS: Zinc oxide, Indium gallium nitride, Atomic force microscopy, Crystals, Vapor phase epitaxy, Temperature metrology, Annealing, Indium, Gallium nitride, Sapphire
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