The low light level and infrared color fusion technology has achieved great success in the field of night vision, the technology is designed to make the hot target of fused image pop out with intenser colors, represent the background details with a nearest color appearance to nature, and improve the ability in target discovery, detection and identification. The low light level images have great noise under low illumination, and that the existing color fusion methods are easily to be influenced by low light level channel noise. To be explicit, when the low light level image noise is very large, the quality of the fused image decreases significantly, and even targets in infrared image would be submerged by the noise. This paper proposes an adaptive color night vision technology, the noise evaluation parameters of low light level image is introduced into fusion process, which improve the robustness of the color fusion. The color fuse results are still very good in low-light situations, which shows that this method can effectively improve the quality of low light level and infrared fused image under low illumination conditions.
Electroluminescence (EL) and photoluminescence (PL) have been measured from thin layer structures of heavily carbon-doped GaAs film, with order 1020 cm-3 hole concentration, grown on semi-insulating GaAs substrate by metalorganic molecular beam epitaxy. The EL is detected only when the film contact is biased positively. The EL peak wavelengths at 80 K and 300 K occur at 900 nm and 950 nm respectively. The PL is measured at 3 K, 12 K, 80 K and 300 K, with peak wavelengths at 869.5 nm, 871.4 nm, 875.1 nm and 911.8 nm respectively. The EL spectra indicate that there are heterojunction interface states at about 50 meV below the conduction band. The PL of as-grown sample can be explained by band-to-band recombination in the heavily carbon-doped GaAs, and the PL of annealed sample arises from recombination centers, formed by CGa donors, in band gap.
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