We report here the photo-pumped lasing operation of GaAs1-xBix with low-temperature-dependent oscillation
wavelengths, and show future prospects for the fabrication of Bi-based lasers. The GaAs0.975Bi0.025 active layer was
grown at 350 °C by molecular beam epitaxy. The lasing oscillation from a GaAs0.975Bi0.025/GaAs semiconductor chip
with a Fabry-Perot cavity was observed by photo-pumping. The characteristic temperature of the laser was 83 K in the
range between 160 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is
40% of the temperature coefficient of the band gap of GaAs in this temperature range. Above 240 K, the lasing threshold
pumping power increased sharply, and the lasing emission peak energy started shifting to higher energies. This result is
probably due to carrier behaviors at the GaAs0.975Bi0.025/GaAs heterointerface, in which a large valence band offset and
an almost flat conduction band offset are expected.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.