Dr. Yoshihisa Sensu Profile

Dr. Yoshihisa Sensu

at Litho Tech Japan Co Ltd

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Author

Publications (10)

Proceedings Article | 27 March 2017 Paper

Effects of phenolic compound addition to fractionated Novolak-based resists to improve resolution capability(2)

Atsushi Sekiguchi, Yoko Matsumoto, Yoshihisa Sensu, Satoshi Takei, Makoto Hanabata, Hatsuyuki Tanaka

Proceedings Volume 10146, 101461K (2017) https://doi.org/10.1117/12.2257548

KEYWORDS: Lithography, Flat panel displays, Microelectromechanical systems, Picture Archiving and Communication System, Electroluminescence, Optical lithography, Polymers, Manufacturing, Photoresist processing, Solids

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Proceedings Article | 25 March 2016 Paper

Enhancing the Novolak resin resist resolution by adding phenol to fractionated resin

Atsushi Sekiguchi, Yoko Matsumoto, Hatsuyuki Tanaka, Toshiyuki Horiuchi, Yoshihisa Sensu, Satoshi Takei, Makoto Hanabata

Proceedings Volume 9779, 97791L (2016) https://doi.org/10.1117/12.2218948

KEYWORDS: Picture Archiving and Communication System, Lithography, Astatine, Optical lithography, Flat panel displays, Microelectromechanical systems, Electroluminescence, Solids, Manufacturing, Photoresist processing

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Proceedings Article | 29 March 2013 Paper

Calculating development parameters for chemically amplified resists by the film-reducing method

Atsushi Sekiguchi, Yoshihisa Sensu

Proceedings Volume 8682, 86821K (2013) https://doi.org/10.1117/12.2008791

KEYWORDS: Chemically amplified resists, FT-IR spectroscopy, Data conversion, Absorption, Photoresist materials, Thin films, Current controlled current source, Copper, Semiconducting wafers, Fourier transforms

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Proceedings Article | 29 March 2006 Paper

Study of cross-linking reactions in negative-type thick-film resists

Yoshihisa Sensu, Atsushi Sekiguchi, Yoshiyuki Kono

Proceedings Volume 6153, 61533S (2006) https://doi.org/10.1117/12.654166

KEYWORDS: Epoxies, Diffusion, Data modeling, Lithography, Temperature metrology, Silicon, Semiconducting wafers, Absorption, Manufacturing, Photoresist materials

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Proceedings Article | 4 May 2005 Paper

Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method

Atsushi Sekiguchi, Yoshihisa Sensu, Youichi Minami

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.597003

KEYWORDS: Liquids, Monochromatic aberrations, Immersion lithography, Lithography, 193nm lithography, Semiconducting wafers, Quartz, Optical lithography, Sensors, Semiconductors

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Proceedings Article | 4 May 2005 Paper

Profile simulation of SU-8 thick film resist

Yoshihisa Sensu, Atsushi Sekiguchi, Satoshi Mori, Nao Honda

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.596856

KEYWORDS: Scanning electron microscopy, Epoxies, Lithography, Temperature metrology, Software development, Absorption, Optical lithography, Photoresist materials, Transmittance, Manufacturing

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Proceedings Article | 14 May 2004 Paper

Study of proximity lithography simulations using measurements of dissolution rate and calculation of the light intensity distributions in the photoresist

Yoshihisa Sensu, Mariko Isono, Atsushi Sekiguchi, Mikio Kadoi, Toshiharu Matsuzawa

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533904

KEYWORDS: Photomasks, Printing, Scanning electron microscopy, Lithography, Packaging, Photoresist materials, Semiconducting wafers, Semiconductors, Photoresist processing, Chromium

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Proceedings Article | 15 January 2003 Paper

Improved resolution of thick film resist (effect of pre-bake condition)

Yoshihisa Sensu, Atsushi Sekiguchi

Proceedings Volume 4979, (2003) https://doi.org/10.1117/12.472761

KEYWORDS: Picture Archiving and Communication System, Optical lithography, Photoresist processing, Scanning electron microscopy, Temperature metrology, Systems modeling, Photomasks, Lithography, Microelectromechanical systems, Water

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Proceedings Article | 24 July 2002 Paper

Improved resolution of thick film resist: effect of development technique

Yoshihisa Sensu, Atsushi Sekiguchi, Yasuhiro Miyake

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474161

KEYWORDS: Surface plasmons, Photoresist processing, Semiconducting wafers, Molecules, Photomasks, Optical lithography, Lithography, Microscopes, Silicon, Analytical research

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In view of the fact that little analysis of the mechanism for the achievement of high resolution or a high aspect ratio in the thick-film resist process has been performed, we study development properties with respect to differences between the development methods employed for pattern formation using thick-film resist. This study identifies the most effective development method for thick-film resist and reports the mechanism of development. For this investigation, we use a development rate measurement system, a mask aligner, and lithography simulator to examine the dipping development method, the step puddle development method, the vibration development method, and the reverse development method. We employ a thick-film positive resist composed of diazo-naphthoquinone (DNQ) and Novolak resin, which is coated on a silicon substrate to a thickness of 24 micrometers . After pre-baking, the coated substrate is placed in a vacuum dessicator to remove water, followed by immersion in deionized water for a fixed period. A mask pattern is transferred to the resist coated substrate with a Mask Aligner Q4000 made by Quintel Corporation, and then the rate of development is measured. A laser microscope analysis of the result indicates that the step puddle development method gives the highest pattern resolution and sharpness, followed by the vibration development method, the dipping development method, and lastly the reverse development method. The mechanisms of the development are studied by comparing the development contrast and the energy of activation involved in each development method, and by conducting resist pattern simulations. The results indicate that the factors responsible for retarding the progression of the development process and causing a degradation of pattern profile and resolution are development inhibition due to N₂ released from inside the resist during the development process, and due to products that are dissolved in the development solution.

Proceedings Article | 24 August 2001 Paper

Improved resolution of thick film resist (verification by simulation)

Yoshihisa Sensu, Atsushi Sekiguchi, Yasuhiro Miyake

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436816

KEYWORDS: Photoresist processing, Transmittance, Software development, Resolution enhancement technologies, Scanning electron microscopy, Lithography, Image processing, Absorption, Optical lithography, Absorbance

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Showing 5 of 10 publications

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