ScAlMgO4 (0001) is a substrate material suitable for heteroepitaxy of In0.17Ga0.83N because lattice matching can be achieved. Although direct growth of In0.17Ga0.83N layers on ScAlMgO4 (0001) substrates is ideal, direct growth by metalorganic vapor phase epitaxy results in nitrogen polarity. In contrast, In0.17Ga0.83N low temperature buffer layers can flip the polarity. On the group-III-polar In0.17Ga0.83N/ScAlMgO4 templates red-emitting quantum wells (QWs) and LEDs were fabricated. The QWs had much better internal quantum efficiencies than those on conventional GaN/sapphire templates, and electrical drive of LEDs was demonstrated.
A nitride semiconductor InGaN is a key material for visible optical devices such as light-emitting diodes (LEDs) and laser diodes. Recently, InGaN-based red LEDs attain increasing interest due to potential application in micro- LED displays. However, the emission efficiency is the highest in the blue spectral range and drastically decreases at longer emission wavelengths. One reason is the large lattice mismatch between the InGaN emitters and the host material of GaN. To circumvent lattice-mismatch-induced issues, ScAlMgO4 substrates are attractive because the host material can be replaced from GaN to InGaN lattice matched to ScAlMgO4, which can reduce strain in the InGaN emitters. Herein, we demonstrate far-red (∼700 nm wavelength) LEDs based on InxGa1−xN/InyGa1−yN quantum wells (x < y) grown on lattice-matched InyGa1−yN/ScAlMgO4 (0001) templates for the first time.
InGaN-based three dimensional structures fabricated on (-1-12-2) through a regrowth technique are promising for highly efficient polychromatic emitters because the structures do not involve (0001) polar-plane facets. We experimentally demonstrate (1) fast radiative recombination in all the facet quantum wells, (2) structure and eventually emission color tunability through the control of mask geometry for the regrowth, and (3) LED operation with pastel and white color emission. These findings suggest promising features of our polar-plane-free faceted InGaN quantum wells as the next generation visible emitters.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.