Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 µm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.
The optical properties of bulk unrelaxed InAsSb layers having a low temperature photoluminescence (PL) peak up to 10
μm are presented. The materials were grown on GaSb substrates by molecular beam epitaxy. The lattice mismatch
between the epilayers and GaSb substrates was accommodated with linearly graded GaAlInSb buffers. An 11-meV width
of PL at full-width half-maximum was measured for InAsSb with Sb compositions of 20 and 44% . The best fit for the
dependence of the energy gap on Sb composition was obtained with a 0.9-eV bowing parameter. Temperature
dependences of the energy gap for InAsSb alloys with 20 % and 44% Sb were determined from PL spectra in the
temperature range from 12 to 300 K. A T=77 K minority carrier lifetime up to 350 ns in undoped InAsSb layers with
20% Sb was determined from PL kinetics.
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop
unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer
layer was used to grow InAs0.12Sb0.88 layer on InSb. The structural and optical characterization of 1-μm thick
InAs1-xSbx layers was performed together with measurements of the carrier lifetime.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.