Mr. Yu Toriyabe Profile

Yu Toriyabe

at Hitachi Ltd

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Proceedings Article | 5 March 2021 Presentation + Paper

Single-pixel UV image sensor based on 4H-SiC CMOS technology with gamma-ray irradiation resistance

S. Nomoto, M. Masunaga, R. Kuwana, T. Kawamura, Y. Toriyabe

Proceedings Volume 11685, 116850K (2021) https://doi.org/10.1117/12.2577567

KEYWORDS: Image sensors, Ultraviolet radiation, Silicon carbide, Gamma radiation, Resistance, CMOS technology, Photodiodes, Field effect transistors, Transistors, Prototyping

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The monitoring and decommissioning of a nuclear power plant requires an image sensor resistant to gamma-ray irradiation that operates around the reactor. In this study, a single-pixel image sensor consisting of a photodiode (PD) and three-n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) was initially prototyped using 4H-SiC complementary metal-oxide-semiconductor (CMOS) technology. The single-pixel circuit responded correctly to the UV lamp being switched on/off, even at 1 MGy. However, the output current (I_OUT) of the image sensor increased by 60% at 200 kGy and then remained constant until 1 MGy. This behavior is caused by a shift in the threshold voltage (▵V_th) of the n-MOSFET. A simulation (using LTspice) confirmed that the increased I_OUT can be suppressed with a differential circuit that reads out the reference voltage and signal voltage at different timing and outputs the difference in their voltage. Although the differential circuit can suppress the increase of I_OUT caused by gamma-ray irradiation, this circuit has its own problem vis-a-vis ▵V_th caused by bias temperature stress. To suppress ▵V_th caused by positive bias temperature instability (PBTI), we proposed a drive method wherein before reading the two voltages, a bias stress is applied for n-MOSFET to saturate ▵V_th. As a result, ▵V_th and its variation can be suppressed. From these results, we expect the single-pixel circuit to function without problems between 0 kGy and 1 MGy using the differential circuit and proposed drive method. The 4H-SiC image sensor could be a promising candidate for a camera with gamma-ray irradiation resistance.

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