Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.
In this work, an analytical study of the temperature dependence of current gain and ideality factor (η)
has been performed for the heterojunction bipolar light emitting transistor (HBLET). In order to utilize
the radiative recombination, the structure of HBT embedded two quantum wells in the base region
which can improve the radiation efficiency. Compare with the convention HBT, the temperature
dependence of current gain increases 42.5% with increasing temperature from 350K followed by a
decrease towards 300K. Variation of gain with temperature is different from that the characteristic of
HBT adding another advantage in favor of the HBLET. The ηB of these devices are similar, revealing
that the space-charge recombination dominates the overall base current. The high output power of
HBLET is 962 μW at 88 mA. These results reveal that the HBLET which combine electrical and
optical characteristic device.
KEYWORDS: Laser phosphor displays, Oxides, Reactive ion etching, Dielectrics, Silicon, Diodes, Field effect transistors, Fluorine, System on a chip, Glasses
Fluorinated silicon glass (FSG) film prepared by using liquid-phase deposition (LPD) is very potential for use as a smart dielectric owing to its high fluorine concentration (8.6 at %), low dielectric constant (3.46), low stress (43 Mpa), low leakage current density (4.6E-9 A/cm2 at 2 MV/cm) and low deposition temperature (room temperature). By affecting the physicochemical properties and the electrical characteristics will be introduced. Furthermore, the LPD FSG has been applied as gate oxide to MOSFET's and polysilicon TFT's. Owing to its novel property of selective deposition, LPD FSG has been also employed to cap the sidewalls for degradation-free damascene trenches, and to fabricate micro contact holes for the N+/p diodes and the Schottky diodes.
To develop a selectively grown silicon oxide film with low stress for micromachined devices, a novel liquid-phase- deposition (LPD) technique is proposed. LPD-oxide can be grown as the supersaturated concentration of Si(OH)4 reaches a low-limit. The concentration can be controlled y the deposition temperature and the quantity of boric acid (H3BO3) added. Owing to the difference in low-limit between Si and photoresist, a selective LPD process window is thus formed. The selective-growth mechanism has been proposed and confirmed. Detailed understanding is instructive to apply the technology to MEMS devices and microfabrication.
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