We report on successful fabricating of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers emitting at 2080nm. Second-order Bragg gratings of chromium were patterned by electron beam lithography. For 1.5- mm-long laser diode, single mode continuous-wave operation with side mode suppression ratio (SMSR) as high as 30dB is obtained. The line-width of the lasing wave is kept as narrow as 70MHz. The devices show a stable single mode operation with current tuning rate of 0.01nm/mA.
Special processing of rapid thermal annealing on the cavity coating films for 1950 nm wavelength antimonide quantum well Laser diodes are studied. The maximum output power of the laser is greatly improved by RTA process on cavity facet films from around 610mW to above 700mW. The power conversion efficiency is further improved by the simple process by 23.2% than that of the laser coated. And the laser devices become more reliable and have extended service life after the process.
AlGaN-based ultraviolet light-emitting diodes (UV LEDs) are promising next-generation UV sources for a wide variety of applications. The state-of-the-art AlGaN-based UV LEDs exhibit much lower output power and external quantum efficiency than highly commercialized GaN visible LEDs. One key issue for UV LEDs is the poor light-extraction efficiency. We have reviewed the recent progress in the light extraction approaches for AlGaN-based UV LEDs, including the highly reflective techniques, and the surface/interface modification for total internal reflection mitigating. Moreover, AlGaN-based UV LEDs in the nanoscale structures, such as nanopillar, nanorod, and nanowire structures, are also discussed.
We report the regrown Al-rich of n-AlGaN material with improved crystalline quality and reduced stress on nanoporous AlGaN template, which was prepared by the electrochemical etching (EC). First, the EC of Al-rich AlxGa1-xN (x > 50 % ) material was investigated to get suitable nanoporous template. Various anodizing voltage and anodizing time were applied to fabricate the nanoporous AlGaN template. The nanopore size and density were found to increase as the anodizing voltage and the anodizing time increase. Moreover, branching pores and vertical pores were apt to be formed at low and high voltages, respectively. Photoluminescence (PL) measurement and Raman spectra indicate that the nanoporous AlGaN materials exhibit higher PL intensity and dramatical release of stress compared to the as-grown AlGaN films due to the presence of nanopores. Furthermore, the nearly stress-free regrown n-AlGaN with high quality using optimized nanoporous AlGaN material as the template was also obtained, which demonstrates that the nanoporous AlGaN template could potentially be applied to heteroepitaxy of efficient AlGaN-based ultraviolet optoelectronic.
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