We have designed and developed a new family of photodetectors and arrays with Internal Discrete
Amplification (IDA) mechanism for the realization of very high gain and low excess noise factor in the
visible and near infrared spectral regions. These devices surpass many limitations of the Single Photon
Avalanche Photodetectors such as ultra low excess noise factor, very high gain, lower reset time (< 200 ns).
These devices are very simple to operate in the non-gated mode under a constant dc bias voltage. Because
of its unique characteristics of self-quenching and self-recovery, no external quenching circuit is needed.
This unique feature of self quenching and self-recovery makes it simple to less complex readout integrated
circuit to realize large format detector arrays.
In this paper, we present the discrete amplification design approach used for the development of self reset,
high gain photodetector arrays in the near infrared wavelength region. The demonstrated device
performance far exceeds any available solid state Photodetectors in the near infrared wavelength range.
These devices are ideal for researchers in the field of spectroscopy, industrial and scientific
instrumentation, Ladar, quantum cryptography, night vision and other military, defense and aerospace
applications.
We present the design and development of a negative feedback devices using the internal discrete amplifier
approach used for the development of a single photon avalanche photodetector in the near infrared
wavelength region. This new family of photodetectors with negative feedback, requiring no quenching
mechanism using Internal Discrete Amplification (IDA) mechanism for the realization of very high gain
and low excess noise factor in the visible and near infrared spectral regions, operates in the non-gated mode
under a constant bias voltage. The demonstrated device performance far exceeds any available solid state
Photodetectors in the near infrared wavelength range. The measured devices have Gain > 2×105, Excess
noise factor < 1.05, Rise time < 350ps, Fall time < 500ps, Dark current < 2×106 cps at room temperature,
and Operating Voltage < 60V. These devices are ideal for researchers in the field of Ladar/Lidar, free space
optical communication, 3D imaging, industrial and scientific instrumentation, night vision, quantum
cryptography, and other military, defence and aerospace applications.
We present the discrete amplification approach used for development of a very high gain and low excess noise factor in
the near infrared wavelength region. The devices have the following performance characteristics: gain > 2X105, excess
noise factor < 1.05, rise time < 350ps, fall time < 500ps and operating voltage < 60V. In the photon counting mode, the
devices can be operated in the non-gated mode under a constant DC bias and do not require any external quenching
circuit. These devices are ideal for researchers in the fields of deep space optical communication, spectroscopy,
industrial and scientific instrumentation, Ladar/Lidar, quantum cryptography, night vision and other military, defense
and aerospace applications.
KEYWORDS: Photodetectors, Near infrared, Sensors, Avalanche photodetectors, Photon counting, Solid state photomultipliers, Optical amplifiers, Analog electronics, Single photon, Measurement devices
A new family of photodetectors with a Discrete Amplification (DA) mechanism allows the realization of very high gain
and low excess noise factor in the visible and near infrared spectral regions and offers an alternative to conventional
photomultiplier tubes and Geiger mode avalanche photodetectors. These photodetectors can operate in linear detection
mode with gain-bandwidth product in excess of 4X1014 and in photon counting mode with count rates up to 108
counts/sec. Potential benefits of this technology over conventional avalanche photodetectors include ultra low excess
noise factor, very high gain, and lower reset time (<< 1 μs). In the photon counting mode, the devices can be operated in
the non-gated mode under a constant dc bias. Because of its unique characteristics of self-quenching and self-recovery,
no external quenching circuit is needed.
We present the discrete amplification design approach used for the development of a solid state photomultiplier in the
near infrared wavelength region. The demonstrated device performance far exceeds any available solid state
photodetectors in the near infrared wavelength range. The measured devices have the following performance
characteristics: gain > 2X105, excess noise factor < 1.05, rise time < 350ps, fall time < 500ps, dark current < 2X106 cps,
operating voltage < 60V. These devices are ideal for researchers in the field of deep space optical communication,
spectroscopy, industrial and scientific instrumentation, Ladar/Lidar, quantum cryptography, night vision and other
military, defence and aerospace applications.
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