KEYWORDS: Monte Carlo methods, Electron beams, Scanning electron microscopy, Beam shaping, Silicon, Line scan image sensors, Scattering, Optical simulations, Solids, Image processing
Based on a Monte Carlo simulation method we have analyzed the influence of electron beam focusing to linewidth measurement for Si trapezoid lines by scanning electron microscopy (SEM) image. The electron probe focusing with finite probe width due to aberration is considered by two different models for simulating incident electron trajectories. The simulation result shows that on the specimen surface the electron beam profile is deviated from the Gaussian probe shape because of the surface topography; the measured linewidth then depends on the focus position and aperture angle.
A new Monte Carlo method is built to describe the generation and transport processes of photoelectrons excited by incident X-ray. XPEEM images for Ag- and Au-dot array on substrate Si are simulated at different incident conditions by the Monte Carlo method. The trajectories of electrons scattered near dot sides and substrate surface were given to visualize the photoelectron penetrating processes. The simulated XPEEM images in TEY mode are found very close to the experimental observations.
Differential surface excitation probability for medium energy electrons traveling in Cu is extracted from reflection electron energy loss spectra using various theoretical models and the Werner’s elimination-retrieved algorithm. While the reflection electron energy loss spectra of Cu thin film were measured by the hemispherical analyzer, the bulk spectra of Cu were recorded by a cylindrical mirror analyzer. Surface Kramers-Kronig dispersion relationship is employed to analyze the surface energy loss function and to derive the complex dielectric constant. We found that the obtained surface optical data approximate reasonably well the optical properties of surface layer.
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