This presentation will give an overview of our recent work on materials growth and device engineering of đť›˝-Ga2O3 electronic devices. We will discuss the design and properties of advanced modulation-doped (Al,Ga)2O3/Ga2O3 structures with high sheet charge density and excellent transport properties. We will then outline novel strategies for realizing high breakdown fields and low resistance within devices, and outline design, growth, and characteristics of state-of-art Gallium Oxide devices, including scaled transistors with cutoff frequency of 27 GHz, and transistors with a power switching figure of merit of 586 MW/cm2 and breakdown voltage of 660V.
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